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The ATF-21170 is a high perfor- mance gallium arsenide Schottky- barrier ... Proven gold based metallization systems and nitride passivation assure a rugged,.
The ATF-21170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. This device ...
This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 ...
Sierra IC Inc. Part #, Manufacturer, Description, Stock, Price, Buy. ATF21170. sku #: ATF21170. HP, 51. Inquiry. See Also: ATF21170 ATF-21186 ATF21186 · Home ...
ATF-21170 SPECIFICATIONS ; Drain Current-Max (ID), 0.2 A ; DS Breakdown Voltage-Min, 7.0 V ; FET Technology, METAL SEMICONDUCTOR ; Highest Frequency Band, C BAND.
Oct 1, 1999 · ATF-21170, general purpose, 1.1 min at 4 GHz, 12.0 min at 4 GHz, 70 mil ceramic, pkg dwg, pdf. space. ATF-21186, general purpose, 0.75 min at 2 ...
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Buy ATF21170 AGILENT , Learn more about ATF21170 TRANSISTOR | JFET | N-CHANNEL | 80MA I(DSS) | MICRO-XVAR, View the manufacturer, and stock, and datasheet ...
ATF-21170 - 0.5-6 GHz Low Noise Gallium Arsenide FET ; Part No. ATF-21170 ; Description, 0.5-6 GHz Low Noise Gallium Arsenide FET ; File Size, 41.90K / 3 Page.
The ATF-21170 is a high perfor- mance gallium arsenide Schottky- barrier-gate ... ATF-21170 Typical Performance, TA = 25°C. ATF-21170 Absolute Maximum Ratings.