Tc = 25°C. 51. A. Tc = 80°C. 38. IDM. Pulsed Drain current. 204. VGS. Gate - Source Voltage. ±30. V. RDSon. Drain - Source ON Resistance.
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Ke.
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Features high blocking voltage, very low stray inductance, ultra-low weight, and ultra-low profile. Learn More.
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APTM50DDAM65T3G. RoHS Compliant View Datasheet. APTM50DDAM65T3G. DOR CC3037. View Product Details. Pricing. Standard Pricing: (Buy Now Price, Any Quantity).
This part can be found in the following product categories: Power Discretes & Modules · Power Modules · MOSFET Modules · Chopper · Power Discretes & Modules ...
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This part can be found in the following product categories: Power Discretes & Modules · Power Modules · MOSFET Modules · Chopper · Power Discretes & Modules ...
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Specification ; Semiconductor structure. diode/transistor ; Drain-source voltage. 500V ; Drain current. 38A ; Case. SP3 ; Topology. boost chopper x2, NTC thermistor.
Part Number # APTM50DDAM65T3G (Transistors - FETs, MOSFETs - Arrays) is manufactured by Microsemi Corporation and distributed by Heisener.
(FET, MOSFET Arrays) APTM50DDAM65T3G ... More on shipping and other trade services. Variations. Package: 1,D/C: 1.
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APTM50DDAM65T3G Features Power MOS 7® MOSFETs-Low RDSon-Low input and Miller capacitance-Low gate charge-Avalanche energy rated-Very rugged Kelvin sou.