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Features. • Power MOS 7® MOSFETs. - Low RDSon. - Low input and Miller capacitance. - Low gate charge. - Avalanche energy rated. - Very rugged.
APTM20HM20STG ; Technology. MOSFET (Metal Oxide) ; Configuration. 4 N-Channel (Full Bridge) ; FET Feature. - ; Drain to Source Voltage (Vdss). 200V.
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Ke.
APTM20HM20STG Microchip Technology Discrete Semiconductor Modules PM-MOSFET-7-SP4 datasheet, inventory & pricing.
APTM20HM20STG Power MOSFET Transistor from Microchip Voltage V 200; On-State Resistance milliΩ 20; Current A 89; datasheet, pricing & availability.
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Specifikationer ; Teknologi: Si ; Förpackning: Tube ; Märke: Microchip Technology ; Produkttyp: Discrete Semiconductor Modules.
Specification ; Type of module. MOSFET transistor ; Semiconductor structure. diode/transistor ; Drain-source voltage. 200V ; Drain current. 66A ; Case. SP4.
Marking manufacturer, APTM20HM20STG ; Factory Lead Time, 42wk-49wk [wk] ; Type of component: FET Tranzistor ; Kategorie, FET N-Channel ; Specification: Enhancement ...
MICROCHIP (MICROSEMI) APTM20HM20STG | Moduł; dioda/tranzystor; 200V; 66A; SP4; Idm: 356A; 357W; Ugs: ±30V - Produkt dostępny w Transfer Multisort Elektronik ...