Tc = 25°C. 70. A. Tc = 80°C. 50. IDM. Pulsed Drain current. 300. VGS. Gate - Source Voltage. ±30. V. RDSon. Drain - Source ON Resistance.
100V/Full bridge/Si Mosfet modules · FREDFETs · Low RDSon · Low input and Miller capacitance · Low gate charge · Fast intrinsic reverse diode · Avalanche energy ...
$1,309.28
APTM10HM19FT3G ; Part Status. Active ; Technology. MOSFET (Metal Oxide) ; Configuration. 4 N-Channel (Full Bridge) ; FET Feature. - ; Drain to Source Voltage (Vdss).
This part can be found in the following product categories: Power Discretes & Modules · Power Modules · Power Discretes & Modules · Power Modules · MOSFET ...
$93.52
Specifications ; Number of Channels: 1 Channel ; Pd - Power Dissipation: 208 W ; Product Type: Discrete Semiconductor Modules ; Rds On - Drain-Source Resistance: 19 ...
Part #: APTM10HM19FT3G. Download. File Size: 295Kbytes. Page: 6 Pages. Description: Full - Bridge MOSFET Power Module. Manufacturer: Microsemi Corporation.
Features. • Power MOS V® FREDFETs. - Low RDSon. - Low input and Miller capacitance. - Low gate charge. - Fast intrinsic diode. - Avalanche energy rated.
MICROCHIP (MICROSEMI) APTM10HM19FT3G | Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W - This product is available in Transfer Multisort ...
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APTM10HM19FT3G Features Power MOS V® FREDFETs-Low RDSon-Low input and Miller capacitance-Low gate charge-Fast intrinsic diode-Avalanche energy rated-V.
