Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated IGBT3.
APTCV40H60CT1G Microchip Technology IGBT Modules PM-MOSFET-COOLMOS-SBD-SP1 datasheet, inventory, & pricing.
APTCV40H60CT1G Silicon Carbide/Silicon Hybrid Modules from Microchip Voltage V 600; Current A 50; Configuration Full bridge/COOLMOS/IGBT/SiC diode; ...
APTCV40H60CT1G. RoHS Compliant · View Datasheet. This device has Suggested Functional Replacement devices with better availability: View Replacements.
1.1 Top Trench + Field Stop IGBT® characteristics. Absolute maximum ratings. Symbol. Parameter. Max ratings. Unit. VCES.
Features. • Q2, Q4 CoolMOS™. - Ultra low RDSon. - Low Miller capacitance. - Ultra low gate charge. - Avalanche energy rated. - Very rugged.
Order today, ships today. APTCV40H60CT1G – IGBT Module Trench Field Stop Full Bridge 600 V 80 A 176 W Chassis Mount SP1 from Microchip Technology.
MICROCHIP (MICROSEMI) APTCV40H60CT1G | Module; transistor/transistor; 600V; 27A; SP1; Press-in PCB; 250W - This product is available in Transfer Multisort ...
$91.20
APTCV40H60CT1G ; Free worries, easy return. 30 Days Returns Policy, 1 year warranty. ; Delivery time. Usually ship in 5 days. Condition: Brand New Factory Sealed ...
APTCV40H60CT1G - Full - Bridge CoolMOS & Trench Field Stop? IGBT Power module. APTCV40H60CT1G_4897862.PDF Datasheet. Part No. APTCV40H60CT1G ...