A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for.
APT30GP60BG ; Current - Collector Pulsed (Icm). 100 A ; Vce(on) (Max) @ Vge, Ic. 2.7V @ 15V, 30A ; Power - Max. 463 W ; Switching Energy. 260µJ (on), 250µJ (off).
$7.95
APT30GP60BG Microchip Technology IGBT Transistors IGBT PT MOS 7 Single 600 V 30 A TO-247 datasheet, inventory, & pricing.
APT30GP60BG ; Product Description. IGBT PT MOS 8 Single 600 V 102 A TO-247 MAX ; Package Type. T-MAX ; Temperature Range. -55C to +150C ; Temperature Range. -55C to ...
APT30GP60BG (#75141) ; Unit. Collector to Emitter Saturation Voltage, V · 2.2, V · Collector-Emitter Breakdown Voltage (VGE = 0 V), V(BR) · 600, V · Fall Time (ns) ...
APT30GP60BG IGBT. Datasheet pdf. Equivalent. Type Designator: APT30GP60BG Type: IGBT Type of IGBT Channel: N-Channel Maximum Power Dissipation (Pc), W: 463