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2SC5085-O(TE85L,F) Toshiba Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz datasheet, inventory, & pricing.
Characteristics, Symbol, Rating, Unit. Collector Current, IC, 0.08, A. Collector power dissipation, PC, 100, mW. Junction temperature, Tj, 125, ℃.
Order today, ships today. 2SC5085-O(TE85L,F) – RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SC-70 from Toshiba Semiconductor and Storage.
Part #: 2SC5085. Download. File Size: 997Kbytes. Page: 7 Pages. Description: Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications ...
Mar 1, 2014 · Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in.
Part #: 2SC5085. Download. File Size: 349Kbytes. Page: 5 Pages. Description: NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS).
2SC5085-O(TE85L,F) Toshiba Bipolar Transistors - BJT datasheets, pricing, and inventory.
Size:471K toshiba 2sc5085.pdf. 2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications Unit: mm ...
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Description: 2SC5085-Y(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Toshiba Semiconductor and Storage stock available at ...
2SC5085 - Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications ; Maker, TOSHIBA. JITONG TECHNOLOGY (CHINA HK & SZ)