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2N7002,215 ; Input Capacitance (Ciss) (Max) @ Vds. 50 pF @ 10 V ; FET Feature. - ; Power Dissipation (Max). 830mW (Ta) ; Operating Temperature. -65°C ~ 150°C (TJ).
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2N7002,215 Nexperia MOSFET 2N7002/SOT23/TO-236AB datasheet, inventory, & pricing.
Features and benefits · Suitable for logic level gate drive sources · Very fast switching · Surface-mounted package · Trench MOSFET technology. Applications.
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2N7002,215 Nexperia MOSFET 2N7002/SOT23/TO-236AB datasheet, inventory & pricing.
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2N7002215. Power MOSFET, N Channel, 60 V, 300 mA, 2.8 Ohm , TO-236AB (SOT-23), 3 Pins, Surface Mount. Click image to enlarge. Back.
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Buy 2N7002,215 with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
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N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. Key Features. Suitable for logic level gate drive ...
2N7002,215 NEXPERIA - Transistor: N-MOSFET | Trench; unipolar
www.tme.com › smd-n-channel-transistors
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NEXPERIA 2N7002,215 | Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; Idm: 1.2A; 830mW - This product is available in Transfer Multisort Elektronik.
2N7002,215 Nexperia $0.0193 - 60V 300mA 5Ω@10V,500mA 830mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS datasheet, price, inventory C65189.
2N7002,215 Nexperia 60V 300MA N-CH TRENCHMOS datasheets, pricing, and inventory.