Technical Specifications ; Collector Base Voltage (VCBO), 30 V ; Collector Emitter Breakdown Voltage, 15 V ; Collector Emitter Saturation Voltage, 400 mV.

2N5770 · ON Semiconductor. IC TRANS NPN SS RF 50MA TO-92. Specifications. Through Hole. TO-226-3, TO-92-3 (TO-226AA). 3. TO-92-3. -55°C~150°C TJ. Bulk. 1997.

... 2N5770_D27Z datasheet. 2N5770_D27Z manufactured by: Fairchild Semiconductor, NPN RF Transistor Others with the same file for datasheet: 2N5770_D75Z

This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the mA to 30 mA range. Sourced from Process See PN918 ...

... Authorized Distributor. Click to View Pricing, Inventory, Delivery & Lifecycle Information: onsemi: 2N5770_D27Z 2N5770_D26Z 2N5770 2N5770_Q 2N5770_D75Z_Q.

2N5770_D27Z Description. The 2N5770_D27Z parts manufactured by onsemi are available for purchase at szcomponents electronic components distributor. Here you ...

Part Number, 2N5770_D27Z. Manufacturer/Brand, AMI Semiconductor/onsemi. Product Description, RF TRANS NPN 15V TO92-3.

2N5457_D27Z ; Package. Tape & Reel (TR) ; Product Status. Obsolete ; FET Type. N-Channel ; Voltage - Breakdown (V(BR)GSS). 25 V ; Current - Drain (Idss) @ Vds (Vgs=0).

RF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3. Trans RF BJT NPN 15V 0.05A 3-Pin TO-92 T/R. Request a quote 2N5770_D27Z at censtry.com.