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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
2N7002,215

- Габаритный чертеж

2N7002,215 — MOSFET N-CH 60V 300MA SOT-23

ПроизводительNXP Semiconductors
Вредные веществаRoHS   Без свинца
СерияTrenchMOS™
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C300mA
Input Capacitance (Ciss) @ Vds50pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Встречается под наим.568-1369-6
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 15 Ohm @ 100mA, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Current - Continuous Drain (Id) @ 25° C: 173mA  ·  Input Capacitance (Ciss) @ Vds: 25pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 10.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.7A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 880pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 117 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 147pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 166W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3430pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 76 mOhm @ 2.8A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 7.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.9A  ·  Input Capacitance (Ciss) @ Vds: 725pF @ 20V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.92W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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BUK952R8-30B,127BUK952R8-30B,127NXP SemiconductorsMOSFET N-CH 30V 75A TO220AB
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 10185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 78.7A  ·  Input Capacitance (Ciss) @ Vds: 1871pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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BUK7237-55A,118BUK7237-55A,118NXP SemiconductorsMOSFET N-CH 55V 32.3A DPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 37 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 32.3A  ·  Input Capacitance (Ciss) @ Vds: 872pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 77W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 5V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  Input Capacitance (Ciss) @ Vds: 650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 4824pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 254W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUK754R3-75C,127NXP SemiconductorsMOSFET N-CH TRENCH 75V TO220AB-3
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BUK9Y19-55B,115BUK9Y19-55B,115NXP SemiconductorsMOSFET N-CH 55V 46A LFPAK
Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 1992pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 85W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 85W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB-3
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 63A  ·  Input Capacitance (Ciss) @ Vds: 4373pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 13.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.1A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-74-6
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 230pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 10185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 85.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5082pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Серия: TrenchMOS™  ·  Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 76.7A  ·  Input Capacitance (Ciss) @ Vds: 2260pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 62.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPak-4
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