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2N7000TA — MOSFET N-CH 60V 200MA TO-92
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | HUFA75329P3 | Fairchild Semiconductor | MOSFET N-CH 55V 49A TO-220AB Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 75nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 49A · Input Capacitance (Ciss) @ Vds: 1060pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 128W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| FDB6021P | Fairchild Semiconductor | MOSFET P-CH 20V 28A TO-263AB Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 14A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 28nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1890pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 37W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | FQP1P50 | Fairchild Semiconductor | MOSFET P-CH 500V 1.5A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 63W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
 | FDY102PZ | Fairchild Semiconductor | MOSFET P-CH 20V 830MA SC89-3 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 3.1nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 830mA · Input Capacitance (Ciss) @ Vds: 135pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 446mW · Mounting Type: Surface Mount · Package / Case: SC-89-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | NDS7002A | Fairchild Semiconductor | MOSFET N-CH 60V 280MA SOT-23 Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 280mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FQPF22P10 | Fairchild Semiconductor | MOSFET P-CH 100V 13.2A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 125 mOhm @ 6.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.2A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| HUF75307D3ST | Fairchild Semiconductor | MOSFET N-CH 55V 15A DPAK Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| FQPF50N06 | Fairchild Semiconductor | MOSFET N-CH 60V 31A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 22 mOhm @ 15.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 1540pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| FQPF5N20L | Fairchild Semiconductor | MOSFET N-CH 200V 3.5A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.75A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 6.2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 325pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Доп. информация Искать в поставщиках | |
 | FQH18N50V2 | Fairchild Semiconductor | MOSFET N-CH 500V 20A TO-247 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 265 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3290pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 277W · Mounting Type: Through Hole · Package / Case: TO-247-3 | Доп. информация Искать в поставщиках | |
 | FQD3N60TM | Fairchild Semiconductor | MOSFET N-CH 600V 2.4A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
 | FDPF44N25T | Fairchild Semiconductor | MOSFET N-CH 250V 44A TO-220F Серия: UniFET™ · Rds On (Max) @ Id, Vgs: 69 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 61nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 2870pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FQB50N06LTM | Fairchild Semiconductor | MOSFET N-CH 60V 52.4A D2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 21 mOhm @ 26.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 52.4A · Input Capacitance (Ciss) @ Vds: 1630pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | FDMS8672AS | Fairchild Semiconductor | MOSFET N-CH 30V 18A POWER56 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2600pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-PQFN, Power56 | от 0,00 | Доп. информация Искать в поставщиках |
 | FDS7088N7 | Fairchild Semiconductor | MOSFET N-CH 30V 23A 8-SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 3 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 48nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 3845pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FQP19N20 | Fairchild Semiconductor | MOSFET N-CH 200V 19.4A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.7A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19.4A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| FDD8782 | Fairchild Semiconductor | MOSFET N-CH 25V 35A DPAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1220pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FQI2N80TU | Fairchild Semiconductor | MOSFET N-CH 800V 2.4A I2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.13W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| FQP19N10L | Fairchild Semiconductor | MOSFET N-CH 100V 19A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 18nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| HUF76629D3 | Fairchild Semiconductor | MOSFET N-CH 100V 20A IPAK Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1285pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
 | FDB13AN06A0 | Fairchild Semiconductor | MOSFET N-CH 60V 62A TO-263AB Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 62A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 1350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FCPF22N60NT | Fairchild Semiconductor | MOSFET N-CH 600V 22A TO-220F Серия: SupreMOS™ · Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 1950pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 39W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FDB8445 | Fairchild Semiconductor | MOSFET N-CH 40V 70A D2PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 3805pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 92W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SSR1N60BTM_F080 | Fairchild Semiconductor | MOSFET N-CH 600V 0.9A DPAK Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 7.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 900mA · Input Capacitance (Ciss) @ Vds: 215pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| FQA65N20 | Fairchild Semiconductor | MOSFET N-CH 200V 65A TO-3P Серия: QFET™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 32.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 7900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 310W · Mounting Type: Through Hole · Package / Case: TO-3PN-3 | от 0,00 | Доп. информация Искать в поставщиках |
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