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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
2N7000RLRMG

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2N7000RLRMG — MOSFET N-CH 60V 200MA TO-92

ПроизводительON Semiconductor
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200mA
Input Capacitance (Ciss) @ Vds60pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max350mW
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226
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Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 1157pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 700mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-WDFN
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Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 465pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 640mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
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Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 10.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 940pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 480mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  Input Capacitance (Ciss) @ Vds: 200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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BS170RLRABS170RLRAON SemiconductorMOSFET N-CH 60V 500MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 350mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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NTD2955PT4GON SemiconductorMOSFET P-CH 60V 12A DPAK
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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MGSF1N02LT1MGSF1N02LT1ON SemiconductorMOSFET N-CH 20V 750MA SOT-23
Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 750mA  ·  Input Capacitance (Ciss) @ Vds: 125pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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NTB75N03RT4ON SemiconductorMOSFET N-CH 25V 9.7A D2PAK
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  Input Capacitance (Ciss) @ Vds: 1333pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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2N7000RLRAG2N7000RLRAGON SemiconductorMOSFET N-CH 60V 200MA TO-92
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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NTD25P03LT4NTD25P03LT4ON SemiconductorMOSFET P-CH 30V 25A DPAK
Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1260pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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NTF2955PT1GON SemiconductorMOSFET P-CH 60V 1.7A SOT-223
Rds On (Max) @ Id, Vgs: 170 mOhm @ 750mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 14.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 492pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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