Войти    Регистрация
ChipFind каталог подбора компонентов
Например: transistor, max232, lt319a
 

Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
2N7000RLRA

2N7000RLRA — MOSFET N-CH 60V 200MA TO-92

ПроизводительON Semiconductor
Обратите вниманиеLTB Notification 08 янв 2008
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200mA
Input Capacitance (Ciss) @ Vds60pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max350mW
Mounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226
Встречается под наим.2N7000RLRAOSTR
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
NTP13N10GNTP13N10GON SemiconductorMOSFET N-CH 100V 13A TO220AB
Rds On (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 64.7W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Доп. информация
Искать в поставщиках
NTK3043NAT5GON SemiconductorMOSFET N-CH 20V 210MA SOT-723
Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 210mA  ·  Input Capacitance (Ciss) @ Vds: 11pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 310mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-723
от 0,00Доп. информация
Искать в поставщиках
NTHD2110TT1GON SemiconductorMOSFET P-CH 12V 4.5A CHIPFET
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 1072pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-ChipFET™
Доп. информация
Искать в поставщиках
MMFT5P03HDT1MMFT5P03HDT1ON SemiconductorMOSFET P-CH 30V 3.7A SOT223
Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 950pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.13W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Доп. информация
Искать в поставщиках
NTP60N06LGNTP60N06LGON SemiconductorMOSFET N-CH 60V 60A TO220AB
Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 3075pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.4W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Доп. информация
Искать в поставщиках
NTD25P03LT4GNTD25P03LT4GON SemiconductorMOSFET P-CH 30V 25A DPAK
Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1260pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTD18N06GNTD18N06GON SemiconductorMOSFET N-CH 60V 18A DPAK
Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
Доп. информация
Искать в поставщиках
NTD40N03R-1GON SemiconductorMOSFET N-CH 25V 7.8A IPAK
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 5.78nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.8A  ·  Input Capacitance (Ciss) @ Vds: 584pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
от 0,00Доп. информация
Искать в поставщиках
NTD3817N-1GON SemiconductorMOSFET N-CH 16V 7.6A IPAK
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 16V  ·  Gate Charge (Qg) @ Vgs: 10.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.6A  ·  Input Capacitance (Ciss) @ Vds: 702pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.2W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
Доп. информация
Искать в поставщиках
NTP85N03RGNTP85N03RGON SemiconductorMOSFET N-CH 28V 85A TO220AB
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 85A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
Доп. информация
Искать в поставщиках
NTB60N06T4GON SemiconductorMOSFET N-CH 60V 60A D2PAK
Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 81nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 3220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTD4904N-1GON SemiconductorMOSFET N-CH 30V 79A SGL DPAK-3от 0,00Доп. информация
Искать в поставщиках
NTR4171PT1GON SemiconductorMOSFET P-CH 30V 2.2A SOT23
Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 720pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 480mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3
от 0,00Доп. информация
Искать в поставщиках
NTD60N02R-1GON SemiconductorMOSFET N-CH 25V 8.5A IPAK
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.5A  ·  Input Capacitance (Ciss) @ Vds: 1330pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.25W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTGS1135PT1GON SemiconductorMOSFET P-CH 8V 4.6A 6-TSOP
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 2200pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 970mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
от 0,00Доп. информация
Искать в поставщиках
NTA4001NT1GNTA4001NT1GON SemiconductorMOSFET N-CH 20V 238MA SOT-416
Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Current - Continuous Drain (Id) @ 25° C: 238mA  ·  Input Capacitance (Ciss) @ Vds: 20pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTMFS4744NT3GON SemiconductorMOSFET N-CH 30V 7A SO-8FL
Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 880mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 5-DFN, SO8 FL
от 0,00Доп. информация
Искать в поставщиках
NTMS4705NR2GON SemiconductorMOSFET N-CHAN 10A 30V 8-SOIC
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.4A  ·  Input Capacitance (Ciss) @ Vds: 1078pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 850mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTB18N06T4ON SemiconductorMOSFET N-CH 60V 15A D2PAK
Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Доп. информация
Искать в поставщиках
NTD4858NA-1GON SemiconductorMOSFET N-CH 25V 11.2A IPAK
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 19.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.2A  ·  Input Capacitance (Ciss) @ Vds: 1563pF @ 12V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
от 0,00Доп. информация
Искать в поставщиках
NTD12N10GNTD12N10GON SemiconductorMOSFET N-CH 100V 12A DPAK
Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.28W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTMS4503NR2NTMS4503NR2ON SemiconductorMOSFET N-CH 28V 9A 8-SOIC
Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 930mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
Доп. информация
Искать в поставщиках
NTF3055-100T1NTF3055-100T1ON SemiconductorMOSFET N-CH 60V 3A SOT223
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 455pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Доп. информация
Искать в поставщиках
NTGS3455T1GNTGS3455T1GON SemiconductorMOSFET P-CH 30V 2.5A 6-TSOP
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.5A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 5V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
от 0,00
от 0,00
Доп. информация
Искать в поставщиках
NTR4003NT3GNTR4003NT3GON SemiconductorMOSFET N-CH 30V 500MA SOT-23
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1.15nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 21pF @ 5V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 690mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
от 0,00
от 0,00
Доп. информация
Искать в поставщиках

Поискать «2N7000RLRA» в:  Google   Яндекс   eFind   eInfo Сообщить об ошибке  


© 2006 — 2024 Капитал Плюс
Телефон, e-mail, ICQ для связи
Каталог с параметрами на 1.401.534 компонентов РегистрацияРеклама на сайте