 |
2N7000_D26Z — MOSFET N-CH 60V 200MA TO-92
| ||||||||||||||||||||||||||
| Войти Регистрация |
|
|||||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | FQT1N80TF_WS | Fairchild Semiconductor | MOSFET N-CH 800V 0.2A SOT-223 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 7.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 195pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | NDC632P | Fairchild Semiconductor | MOSFET P-CH 20V 2.7A SSOT-6 Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 550pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 800mW · Mounting Type: Surface Mount · Package / Case: 6-SSOT, SuperSOT-6 | Доп. информация Искать в поставщиках | |
 | FDD6512A | Fairchild Semiconductor | MOSFET N-CH 20V 10.7A D-PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10.7A · Input Capacitance (Ciss) @ Vds: 1082pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
 | FDMA291P | Fairchild Semiconductor | MOSFET P-CH 20V 6.6A MFET 2X2 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 1000pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: 6-MLP, 6-MicroFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SFP9Z24 | Fairchild Semiconductor | MOSFET P-CH 60V 9.7A TO-220 Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 49W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
 | FQP6N60 | Fairchild Semiconductor | MOSFET N-CH 600V 6.2A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · Input Capacitance (Ciss) @ Vds: 1000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 130W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| FDFMA2P853T | Fairchild Semiconductor | MOSFET P-CH 20V 3A 6-MICROFET Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 435pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 6-MLP, 6-MicroFET™ | от 0,00 | Доп. информация Искать в поставщиках | |
 | HUFA76443P3 | Fairchild Semiconductor | MOSFET N-CH 60V 75A TO-220AB Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 129nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4115pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 260W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | HUF75344A3 | Fairchild Semiconductor | MOSFET N-CH 55V 75A TO-3PN Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 208nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4855pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 288.5W · Mounting Type: Through Hole · Package / Case: TO-3PN-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FCP7N60 | Fairchild Semiconductor | MOSFET N-CH 600V 7A TO-220 Серия: SuperFET™ · Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| NDP7061 | Fairchild Semiconductor | MOSFET N-CH 60V 64A TO-220 Rds On (Max) @ Id, Vgs: 16 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 64A · Input Capacitance (Ciss) @ Vds: 1930pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 130W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| FQAF17P10 | Fairchild Semiconductor | MOSFET P-CH 100V 12.4A TO-3PF Серия: QFET™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12.4A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 56W · Mounting Type: Through Hole · Package / Case: TO-3PF-3 | Доп. информация Искать в поставщиках | ||
 | FDS9435A | Fairchild Semiconductor | MOSFET P-CH 30V 5.3A 8-SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 528pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FQA7N80C | Fairchild Semiconductor | MOSFET N-CH 800V 7A TO-3P Серия: QFET™ · Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 198W · Mounting Type: Through Hole · Package / Case: TO-3P-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
| FDB039N06 | Fairchild Semiconductor | MOSFET N-CH 60V 120A D2PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 133nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 8235pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 231W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | FQT7N10LTF | Fairchild Semiconductor | MOSFET N-CH 100V 1.7A SOT-223 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 850mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 290pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FQD2N100TM | Fairchild Semiconductor | MOSFET N-CH 1000V 1.6A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 9 Ohm @ 800mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 15.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FQD20N06LTF | Fairchild Semiconductor | MOSFET N-CH 60V 17.2A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 60 mOhm @ 8.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 17.2A · Input Capacitance (Ciss) @ Vds: 630pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| FQA44N08 | Fairchild Semiconductor | MOSFET N-CH 80V 49.8A TO-3P Серия: QFET™ · Rds On (Max) @ Id, Vgs: 34 mOhm @ 24.9A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 49.8A · Input Capacitance (Ciss) @ Vds: 1430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 163W · Mounting Type: Through Hole · Package / Case: TO-3P-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
| FQAF28N15 | Fairchild Semiconductor | MOSFET N-CH 150V 22A TO-3PF Серия: QFET™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 102W · Mounting Type: Through Hole · Package / Case: TO-3PF-3 | от 0,00 | Доп. информация Искать в поставщиках | |
 | NDS352AP | Fairchild Semiconductor | MOSFET P-CH 30V 900MA SSOT3 Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 900mA · Input Capacitance (Ciss) @ Vds: 135pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 460mW · Mounting Type: Surface Mount · Package / Case: 3-SSOT, SuperSOT-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FQPF2N30 | Fairchild Semiconductor | MOSFET N-CH 300V 1.34A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 670mA, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.34A · Input Capacitance (Ciss) @ Vds: 130pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 16W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Доп. информация Искать в поставщиках | |
| FQI3N90TU | Fairchild Semiconductor | MOSFET N-CH 900V 3.6A I2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 910pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.13W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| FQU7N10LTU | Fairchild Semiconductor | MOSFET N-CH 100V 5.8A IPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5.8A · Input Capacitance (Ciss) @ Vds: 290pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
 | FDB8896 | Fairchild Semiconductor | MOSFET N-CH 30V 93A TO-263AB Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 93A · Input Capacitance (Ciss) @ Vds: 2525pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 80W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
RoHS 
Без свинца