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MJD112G ; DC Current Gain (hFE) (Min) @ Ic, Vce. 1000 @ 2A, 3V ; Power - Max. 1.75 W ; Frequency - Transition. 25MHz ; Operating Temperature. -65°C ~ 150°C (TJ).
$0.63
MJD112G onsemi Darlington Transistors 2A 100V Bipolar Power NPN datasheet, inventory, & pricing.
MJD112 (NPN),. MJD117 (PNP). Designed for general purpose power and switching ... MJD112G. DPAK. (Pb-Free). 369C. 75 Units / Rail. NJVMJD112G*. DPAK. (Pb-Free).
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Buy onsemi MJD112G in Tube. MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252-3 from Future Electronics.
$0.22
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as ...
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MJD112-1G onsemi Darlington Transistors 2A 100V Bipolar Power NPN datasheet, inventory, & pricing.
MJD112, MJD117. Electrical characteristics. Doc ID 3540 Rev 3. 3/10. 2. Electrical characteristics. Tcase = 25 °C; unless otherwise specified. Note: For PNP ...
Order Today On Semiconductor Transistor MJD112 NPN Darlington 2A 100V DPAK package. Authorized Distributor - Products in stock ready to ship.
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Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 RoHS Compliant: Yes ; Order multiple quantity: 1 ; Price: $0.699 ; Availability.
$0.48
MJD112G onsemi $0.4805 - 100V 1000@3V,2A NPN 2A 1.75W DPAK Darlington Transistors ROHS datasheet, price, inventory C603305.