DESCRIPTION. This new series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.
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Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ. Learn More. No ...
$2.12
IRF840LC ; Input Capacitance (Ciss) (Max) @ Vds. 1100 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 125W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
IRF840LC PRODUCT INFORMATION. Power MOSFET. vsh-img-product-image. FEATURES. Ultra low gate charge. Reduced gate drive requirement. Enhanced 30 V VGS rating.
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Transistor IRF840 N Channel 500 Volt 8 Amps ; Maximum Drain Source Resistance, 0.8 Ohms@10V ; Maximum Forward Current, 8A ; Typical Fall Time, 75ns ; Typical Gate ...
This device is designed for wireless infrastructure, test instruments and other RF & microwave applications from 100 MHz to 6 GHz. Supports to 20 watts power ...
IRF840 STMicroelectronics MOSFET N-Ch 500 Volt 8 Amp datasheet, inventory, & pricing.
Order today, ships today. IRF840 – N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220 from STMicroelectronics. Pricing and Availability on millions of ...
This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device ...
MOSFET, N TO-220; Transistor type:MOSFET; Current, Id cont:8A; Resistance, Rds on:0.85ohm; Case style:TO-220AB; Current, Idm pulse:28A; Pins, No. of:3; Power ...