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IRF3710ZSPBF ; Input Capacitance (Ciss) (Max) @ Vds. 2900 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 160W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
IRF3710ZSPBF Infineon Technologies MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC datasheet, inventory, & pricing.
Description. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low.
Nov 12, 2013 · Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance ...
Jul 23, 2010 · Description. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Specification ; Type of transistor. N-MOSFET ; Technology. HEXFET® ; Polarisation. unipolar ; Drain-source voltage. 100V ; Drain current. 59A.
Jun 30, 2004 · Description. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest.
IRF3710ZSPBF Application Note Infineon | 1/12 Pages - AiPCBA
www.aipcba.com › datasheet › application
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IRF3710ZSPBF Application Note Infineon MOSFET, MOSFET Transistor 37 page, IRF3710ZSPBF D2PAK N-CH 100V 59A.
IRF3710ZSPBF MOSFET. Datasheet pdf. Equivalent. Type Designator: IRF3710ZSPBF Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power ...