BFG67,215 ; Part Status. Obsolete ; Transistor Type. NPN ; Voltage - Collector Emitter Breakdown (Max). 10V ; Frequency - Transition. 8GHz ; Noise Figure (dB Typ @ f).
Specifications ; Technology: Si ; Transistor Polarity: NPN ; Operating Frequency: 8 GHz ; Collector- Emitter Voltage VCEO Max: 10 V.
€0.06
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BFG67/X,215 ; Transistor Type. NPN ; Voltage - Collector Emitter Breakdown (Max). 10V ; Frequency - Transition. 8GHz ; Noise Figure (dB Typ @ f). 1.3dB @ 1GHz.
BFG67,215. RF BJT BFG67,215. Manufacturer: NXP. Model: BFG67,215. Batch: --. Category: Diodes, Transistors and Thyristors. Class: RF BJT. Datasheet : BFG67,215.
Nov 23, 2007 · BFG67; BFG67/X; BFG67/XR. Fig.4 DC current gain as a function of collector current. VCE = 5 V. handbook, halfpage. 0. 120. 80. 40. 0. 20. 40.
BFG67,215. 厂家：NXP Semiconductors; 封装：SOT-143B; 批号：--; 数量：1,450 - 立即发货; 价格：询价; 类型：RF 晶体管; PDF： BFG67,215. 联系我们. 联系号码; 服务 ...
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