2N5550; 2N5551. FEATURES. • Low current (max. 300 mA). • High voltage (max ... 2N5550; 2N5551. DATA SHEET STATUS. Notes. 1. Please consult the ...
People also ask
What is the equivalent of 2N5551?
What is the function of 2N5551 transistor?
What is the voltage of 2N5551?
What is the max frequency of 2N5551?
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and. 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART ...
2N5551. Description. This device is designed for general−purpose high−voltage ... 2N5551 (Test condition: IC = 10 mA, VCE = 5.0 V). Page 6. TO−92 3 4.825x4.76.
In stock
The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas ...
In stock
Order today, ships today. 2N5551 TIN/LEAD – Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92-3 from Central Semiconductor Corp.
2N5551 / MMBT5551 Rev. 2. 1. August 2018. 2N5551 / MMBT5551. NPN General-Purpose Amplifier. Ordering Information. Part Number. Top Mark. Package. Packing Method.
These high reliability transistors are suited for assembly on thick & thin-film hybrid circuits with high mechanical quality & Gold back metallization.
Dec 21, 2017 · The 2N5551 is an NPN amplifier Transistor with an amplification factor of 80 when the collector current is 10mA.
The 2N5550 and 2N5551 is a silicon NPN amplifier transistor packaged in a standard TO-92 case. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO. 2N5550.