VISHAY
TSFF5210
Document Number 81090
Rev. 1.4, 23-Jun-04
Vishay Semiconductors
www.vishay.com
1
94 8390
High Speed IR Emitting Diode in
5 mm (T-1) Package
Description
TSFF5210 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
Features
High modulation bandwidth (23 MHz)
Extra high radiant power and radiant intensity
Low forward voltage
Suitable for high pulse current operation
Standard T-1 (
5 mm) package
Angle of half intensity
= 10
Peak wavelength
p
= 870 nm
High reliability
Good spectral matching to Si photodetectors
Lead-free device
Applications
Infrared video data transmission between Camcorder
and TV set.
Free air data transmission systems with high modu-
lation frequencies or high data transmission rate
requirements.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V
R
5
V
Forward current
I
F
100
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100
s
I
FM
200
mA
Surge Forward Current
t
p
= 100
s
I
FSM
1
A
Power Dissipation
P
V
250
mW
Junction Temperature
T
j
100
C
Operating Temperature Range
T
amb
- 25 to + 85
C
Storage Temperature Range
T
stg
- 25 to + 85
C
Soldering Temperature
t
5 sec, 2 mm from case
T
sd
260
C
Thermal Resistance Junction/
Ambient
R
thJA
300
K/W
www.vishay.com
2
Document Number 81090
Rev. 1.4, 23-Jun-04
VISHAY
TSFF5210
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Optical Characteristics
T
amb
= 25 C, unless otherwise specified
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
I
F
= 100 mA, t
p
= 20 ms
V
F
1.5
1.8
V
I
F
= 1 A, t
p
= 100
s
V
F
2.3
3.0
V
Temp. Coefficient of V
F
I
F
= 100 mA
TK
VF
- 2.1
mV/K
Reverse Current
V
R
= 5 V
I
R
10
A
Junction capacitance
V
R
= 0 V, f = 1 MHz, E = 0
C
j
125
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Radiant Intensity
I
F
= 100 mA, t
p
= 20 ms
I
e
90
180
450
mW/sr
I
F
= 1 A, t
p
= 100
s
I
e
1800
mW/sr
Radiant Power
I
F
= 100 mA, t
p
= 20 ms
e
50
mW
Temp. Coefficient of
e
I
F
= 100 mA
TK
e
- 0.35
%/K
Angle of Half Intensity
10
deg
Peak Wavelength
I
F
= 100 mA
p
870
nm
Spectral Bandwidth
I
F
= 100 mA
40
nm
Temp. Coefficient of
p
I
F
= 100 mA
TK
p
0.25
nm/K
Rise Time
I
F
= 100 mA
t
r
15
ns
Fall Time
I
F
= 100 mA
t
f
15
ns
Cut-Off Frequency
I
DC
= 70 mA, I
AC
= 30 mA pp
f
c
23
MHz
Virtual Source Diameter
3.7
mm
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
300
0
10 20 30 40 50 60 70 80 90 100
T
amb
Ambient Temperature (
C )
16647
P
Power Dissipation (mW)
V
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
0
25
50
75
100
125
150
175
200
0
10 20 30 40 50 60 70 80 90 100
T
amb
Ambient Temperature ( C )
16964
I Forward Current ( mA
)
F
R
thJA
VISHAY
TSFF5210
Document Number 81090
Rev. 1.4, 23-Jun-04
Vishay Semiconductors
www.vishay.com
3
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Radiant Intensity vs. Forward Current
100
1000
0.01
0.1
1.0
10
100
t
p
- Pulse Duration ( ms )
16031
t
p
/ T= 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50
I
-Forward
Current
(
m
A
)
F
18873
F
I
-
Forward
Current
(
m
A
)
1000
100
10
1
V
F
- Forward Voltage ( V )
0
1
2
3
4
t = 100
s
p
t / T = 0.001
p
0.1
1
10
100
1000
1
10
100
1000
16032
I
F
- Forward Current ( mA )
I
-
Radiant
Intensity
(
mW/sr
)
e
Figure 6. Relative Radiant Power vs. Wavelength
Figure 7. Relative Radiant Intensity vs. Angular Displacement
Figure 8. Attenuation vs. Frequency
780
880
Wavelength ( nm )
980
95 9886
0
0.25
0.5
0.75
1.0
1.25
-
Relative
Radiant
Power
e,
rel
0.4
0.2
0
0.2
0.4
I
Relative
Radiant
Intensity
e
rel
0.6
15989
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
-5
-4
-3
-2
-1
0
1
10
100
1000
10000
100000
f - Frequency ( kHz )
14256
-Attenuation
(dB)
I
FDC
= 70mA
I
FAC
= 30mA pp
I
e,
e
VISHAY
TSFF5210
Document Number 81090
Rev. 1.4, 23-Jun-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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