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Электронный компонент: TGF4240-SCC

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TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
March 31, 2003
1
2.4 mm Discrete HFET TGF4240-SCC
Key Features and Performance
2400 m x 0.5 m HFET
Nominal Pout of 31.5 dBm at 8.5 GHz
Nominal Gain of 10.0 dB at 8.5 GHz
Nominal PAE of 56 % at 8.5 GHz
Frequency Range: DC - 12 GHz
Suitable for high reliability applications
0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12
GHz in Class A and Class AB operation.
Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy
attach methods as well as thermocompression and thermosonic wire-bonding
processes.
The TGF4240-SCC is readily assembled using automatic equipment.
DESCRIPTION
Primary Applications
Cellular Base Stations
High-reliability space
Military
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TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
March 31, 2003
2
TGF4240-SCC
TABLE I
MAXIMUM RATINGS
SYMBOL
PARAMETER 1/
VALUE
NOTES
V
DS
Drain to Source Voltage
12 V
V
GS
Gate to Source Voltage Range
0 to -5.0 Volts
P
D
Power Dissipation
TBD
2/
T
CH
Operating Channel Temperature
150
C
3/, 4/
T
STG
Storage Temperature
-65 to 200
C
T
M
Mounting Temperature (30 seconds)
320
C
1/ These ratings represent the maximum values for this device. Stresses beyond those listed
under "Maximum Ratings" may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "DC Probe Characteristics" is not implied. Exposure to maximum rated
conditions for extended periods may affect device reliability.
2/ When operated at this bias condition with a base plate temperature of 70
0
C, the median life is
reduced from TBD to TBD hours.
3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels
4/ These ratings apply to each individual FET
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TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
March 31, 2003
3
TABLE II
DC PROBE CHARACTERISTICS
(T
A
= 25
C, Nominal)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Note
I
DSS
Saturated Drain Current
--
588
--
mA
1/
G
M
Transconductance
--
396
--
mS
1/
V
P
Pinch-off Voltage
1
1.85
3
V
2/
V
BGS
Breakdown Voltage
Gate-Source
17
22
30
V
2/
V
BGD
Breakdown Voltage
Gate-Drain
17
22
30
V
2/
1/ Total for two FETS
2/ V
P
, V
BGS
, and V
BGD
are negative.
TABLE III
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C, Nominal)
Bias Conditions: Vd = 8 V, Id = 100 mA
Symbol
Parameter
Typical
Unit
Pout
Output Power
31.5
dBm
Gp
Power Gain
10
dB
PAE
Power Added Efficiency
56
%
TGF4240-SCC
TABLE IV
THERMAL INFORMATION*
Parameter
Test Conditions
T
CH
(
o
C)
R
qJC
(
C/W)
T
M
(HRS)
R
qJC
Thermal
Resistance
(channel to backside
of carrier)
Vd = 8 V
I
D
= 100 mA
Pdiss = TBD
TBD
TBD
TBD
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70
C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
* The thermal information is a result of a detailed thermal model.
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TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
March 31, 2003
4
TGF4240-SCC
TYPICAL PERFORMANCE
Bias Conditions: Freq = 8.5 GHzm Vd = 8V, Id = 100mA
(T
A
= 25
C, Nominal)
Ga
i
n

-
dB and Outpu
t
Powe
r

- dB
m
Input Power - dBm
Powe
r Add
e
d Eff
i
c
i
enc
y
- %
Pout (dBm)
Gain (dB)
PAE (%)
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TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
March 31, 2003
5
Unmatched Modeled S-Parameter Data for the
TGF4240-SCC
TGF4240-SCC
FREQ
(GHz)
S11
MAG
dB
ANG (
)
deg
S21
MAG
dB
ANG (
)
deg
S12
MAG
dB
ANG (
)
deg
S22
MAG
dB
ANG (
)
deg
0.5
-0.336
-62.251
20.588
144.748
-31.032
56.129
-13.423 -116.099
1.0
-0.642 -100.759
17.874
122.599
-27.740
36.651
-10.066 -135.107
1.5
-0.803 -122.281
15.374
109.317
-26.741
25.761
-8.938 -144.013
2.0
-0.881 -135.190
13.286
100.360
-26.363
19.133
-8.381 -148.390
2.5
-0.920 -143.616
11.538
93.616
-26.216
14.702
-8.008 -150.580
3.0
-0.940 -149.505
10.046
88.120
-26.175
11.520
-7.705 -151.636
3.5
-0.948 -153.846
8.747
83.392
-26.194
9.118
-7.428 -152.083
4.0
-0.950 -157.179
7.598
79.175
-26.255
7.243
-7.161 -152.203
4.5
-0.948 -159.826
6.565
75.316
-26.343
5.750
-6.898 -152.157
5.0
-0.942 -161.984
5.626
71.723
-26.452
4.553
-6.638 -152.041
5.5
-0.934 -163.785
4.764
68.337
-26.580
3.595
-6.381 -151.912
6.0
-0.925 -165.317
3.966
65.118
-26.726
2.843
-6.128 -151.804
6.5
-0.914 -166.642
3.221
62.039
-26.886
2.275
-5.879 -151.737
7.0
-0.902 -167.805
2.522
59.080
-27.058
1.876
-5.636 -151.720
7.5
-0.890 -168.839
1.862
56.227
-27.242
1.639
-5.400 -151.757
8.0
-0.877 -169.769
1.236
53.470
-27.436
1.559
-5.172 -151.850
8.5
-0.863 -170.615
0.640
50.801
-27.639
1.634
-4.951 -151.995
9.0
-0.849 -171.390
0.071
48.214
-27.851
1.866
-4.739 -152.191
9.5
-0.835 -172.108
-0.475
45.704
-28.068
2.256
-4.535 -152.432
10
-0.821 -172.776
-1.000
43.267
-28.291
2.807
-4.340 -152.714
10.5
-0.807 -173.404
-1.506
40.901
-28.515
3.521
-4.154 -153.033
11.0
-0.793 -173.996
-1.995
38.603
-28.740
4.403
-3.976 -153.385
11.5
-0.779 -174.558
-2.468
36.371
-28.964
5.454
-3.807 -153.764
12.0
-0.765 -175.093
-2.928
34.202
-29.186
6.679
-3.645 -154.169
12.5
-0.751 -175.607
-3.374
32.095
-29.401
8.076
-3.491 -154.594
13.0
-0.737 -176.100
-3.808
30.048
-29.606
9.646
-3.345 -155.037
13.5
-0.724 -176.576
-4.232
28.060
-29.800
11.386
-3.206 -155.494
14.0
-0.711 -177.036
-4.645
26.131
-29.979
13.288
-3.074 -155.964

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