TPCS8212
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
Lithium Ion Battery Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 16 m (typ.)
High forward transfer admittance: |Y
fs
| = 11 S (typ.)
Low leakage current: I
DSS
= 10 A (max) (V
DS
= 20 V)
Enhancement-mode: V
th
= 0.5~1.2 V (V
DS
= 10 V, I
D
= 200 A)
Common drain
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
20 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
20 V
Gate-source voltage
V
GSS
12 V
DC (Note
1)
I
D
6
Drain current
Pulse (Note
1) I
DP
24
A
Single-device
operation (Note 3a)
P
D (1)
1.1
Drain power
dissipation
(t
= 10 s)
(Note 2a)
Single-device value
at dual operation
(Note
3b)
P
D (2)
0.75
Single-device
operation (Note 3a)
P
D (1)
0.6
Drain power
dissipation
(t
= 10 s)
(Note 2b)
Single-device value
at dual operation
(Note
3b)
P
D (2)
0.35
W
Single pulse avalanche energy
(Note
4)
E
AS
46.8
mJ
Avalanche current
I
AR
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.075
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
TPCS8212
2002-01-17
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
114
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
167
C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
208
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
357
C/W
Marking
(Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: V
DD
= 16 V, T
ch
= 25C (initial), L = 1.0 mH, R
G
= 25 , I
AR
= 6 A
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6: on lower right of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively)
Type
S8212
FR-4
25.4
25.4 0.8
(Unit: mm)
FR-4
25.4
25.4 0.8
(Unit: mm)
TPCS8212
2002-01-17
3
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 10 V, V
DS
= 0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -12 V
8
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 200 A 0.5
1.2 V
V
GS
= 2.0 V, I
D
= 4.2 A
26 45
V
GS
= 2.5 V, I
D
= 4.2 A
21 29
Drain-source ON resistance
R
DS (ON)
V
GS
= 4.0 V, I
D
= 4.8 A
16 24
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 3.0 A
5.5 11
S
Input capacitance
C
iss
1590
Reverse transfer capacitance
C
rss
180
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
200
pF
Rise time
t
r
6.4
Turn-ON time
t
on
22
Fall time
t
f
10
Switching time
Turn-OFF time
t
off
Duty <
= 1%, t
w
= 10 s
42
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
20
Gate-source charge 1
Q
gs1
3.5
Gate-drain ("miller") charge
Q
gd
V
DD
- 16 V, V
GS
= 5 V, I
D
= 6 A
4.5
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
24 A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
-1.2 V
R
L
=
3.
3
V
DD
- 10 V
0 V
V
GS
5 V
4.
7
I
D
= 3 A
V
OUT
TPCS8212
2002-01-17
4
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
|Y
fs
| I
D
R
DS (ON)
I
D
Fo
r
w
ar
d t
r
a
n
sfe
r
adm
i
tta
nce
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge V
DS
(
V
)
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
st
anc
e
R
DS (
O
N)
(
m
)
0
VGS = 1.4 V
1.5
2
4, 5
0 1 2 3 4 5
2
4
6
8
10
1.8
Common source
Ta
= 25C
Pulse test
1.7
1.6
0
VGS = 1.4 V
1.5
1.6
1.7
2
0 0.4 0.8 1.2 1.6 2.0
1
2
3
4
5
Common source
Ta
= 25C
Pulse test
4, 5
0
0 1 2 3 4 5
2
4
6
8
10
Ta
= -55C
100
25
Common source
VDS = 10 V
Pulse test
0
0
2
4
6
8
10
0.2
0.4
0.8
6
ID = 12 A
0.6
Common source
Ta
= 25C
Pulse test
1.5
3
1
0.1
1
10
10
100
Ta
= -55C
25
100
Common source
VDS = 10 V
Pulse test
1
0.1
1
10
10
100
VGS = 4 V
Common source
Ta
= 25C
Pulse test
2.5
2
TPCS8212
2002-01-17
5
R
DS (ON)
Ta
I
DR
V
DS
Capacitance V
DS
V
th
Ta
P
D
Ta
Dynamic input/output characteristics
D
r
ai
n
po
w
e
r
di
ssi
pati
on
P
D
(
W
)
Gate
th
res
hol
d vol
t
ag
e
V
th
(
V
)
Ambient temperature Ta (C)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
st
anc
e
R
DS (ON)
(m
)
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
C
apa
ci
ta
nce
C
(
p
F)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge V
DS
(V
)
Gate
-so
u
r
c
e v
o
l
t
a
ge
V
GS
(V
)
Total gate charge Q
g
(nC)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
0
0.4
0.8
1.2
1.6
-80
-40
0
40
80
120
160
Common source
VDS = 10 V
ID = 200 A
Pulse test
0.1 1 10
Ciss
Coss
Crss
100
10
100
1000
10000
Common source
Ta
= 25C
VGS = 0 V
f
= 1 MHz
0 8
24 32
16
0
2
4
6
8
10
0
4
8
12
16
20
Common source
ID = 6 A
Ta
= 25C
Pulse test
VDD = 16 V
VDS
VGS
0
0
0.2
0.4
0.6
0.8
1
1.2
50
100
200
150
(1)
(4)
(3)
(2)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation
(Note
3b)
t
= 10 s
1
0 0.2 0.4 0.6 0.8 1.0 1.2
3
10
VGS = -1 V
1
Common source
Ta
= 25C
Pulse test
3
0
10
5
5
-80
-40 0 40
120
160
80
Common source
Pulse test
ID = 1.5, 3, 6 A
VGS = 2 V
VGS = 2.5 V
VGS = 4 V
50
60
30
40
10
20
0
TPCS8212
2002-01-17
6
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
r
th
- t
w
Norm
al
i
z
ed t
r
ans
i
e
n
t
t
her
m
a
l
i
m
pe
danc
e
r
th
(
C
/
W
)
0.001 0.01 0.1
1
10 100 1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
(1)
0.1
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
(2)
(3)
(4)
Single pulse
Pulse width t
w
(S)
0.01 0.03 0.1 0.3
1
3
10
100
30
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
10
30
100
50
* Single pulse Ta
= 25C
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Single-device value at dual
operation (Note
3b)
Safe operating area
TPCS8212
2002-01-17
7
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
PDF 
ZIP