TLP733,TLP734
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired&Photo
-Transistor
TLP733, TLP734
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP733 and TLP734 consist of a photo-transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP734 is no-base internal connection for high-EMI environments.
Collector-emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
UL recognized: UL1577, file no. E67349
BSI approved: BS EN60065: 1994
Certificate no. 7364
BS
EN60950:
1992
Certificate no. 7365
SEMKO approved: SS4330784
Certificate no. 9325163, 9522142
Isolation voltage: 4000 V
rms
(min.)
Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 91808
Maximum operating insulation voltage: 630, 890 V
PK
Highest permissible over voltage: 6000, 8000 V
PK
(Note) When a VDE0884 approved type is needed,
please designate the "Option (D4)"
7.62 mm pich
10.16 mm pich
standard type
TLPF type
Creepage distance
: 7.0 mm (min.)
8.0 mm (min.)
Clearance
: 7.0 mm (min.)
8.0 mm (min.)
Internal creepage path : 4.0 mm (min.)
4.0 mm (min.)
Insulation thickness
: 0.5 mm (min.)
0.5 mm (min.)
Pin Configurations
(top view)
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Base
5
6
4
2
1
3
TLP733
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Nc
5
6
4
2
1
3
TLP734
Unit in mm
TOSHIBA 11-7A8
Weight: 0.42 g
TLP733,TLP734
2002-09-25
2
Current Transfer Ratio
Current Transfer
Ratio (%)
(I
C
/ I
F
)
I
F
= 5mA, V
CE
= 5V, Ta = 25C
Type
Classi
-
fication
*1
Min. Max.
Marking Of Classification
(None) 50 600
Blank,
Y,
Y
, G, G
, B, B
, GB
50
150
Y,
Y
Rank GR
100
300
G, G
200
600
B,
B
TLP733
TLP734
Rank GB
100
600
G, G
, B, B
, GB
*1: Ex. rank GB: TLP733 (GB)
Note: Application type name for certification test, please use standard product type name, i.e.
TLP733 (GB): TLP733
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
60
mA
Forward current derating (Ta 39C)
I
F
/ C
-0.7
mA / C
Peak forward current (100 s pulse, 100 pps)
I
FP
1
A
Reverse voltage
V
R
5
V
LE
D
Junction temperature
T
j
125
C
Collector
-emitter voltage
V
CEO
55 V
Collector
-base voltage (TLP733)
V
CBO
80 V
Emitter
-collector voltage
V
ECO
7 V
Emitter
-base voltage (TLP733)
V
EBO
7 V
Collector current
I
C
50
mA
Power dissipation
P
C
150
mW
Power dissipation derating (Ta 25C)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125
C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-40~100 C
Lead soldering temperature (10 s)
T
sol
260
C
Total package power dissipation
P
T
250
mW
Total package power dissipation derating (Ta 25C)
P
T
/ C
-2.5 mW
/
C
Isolation voltage (AC, 1 min., R.H. 60%)
BV
S
4000
V
rms
TLP733,TLP734
2002-09-25
3
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
5 24 V
Forward current
I
F
16 25 mA
Collector current
I
C
1 10 mA
Operating temperature
T
opr
-25
85 C
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10 mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5 V
10 A
LE
D
Capacitance C
T
V = 0, f = 1 MHz
30 pF
Collector
-emitter
breakdown voltage
V
(BR)CEO
I
C
= 0.5 mA
55
V
Emitter
-collector
breakdown voltage
V
(BR)ECO
I
E
= 0.1 mA
7
V
Collector
-base
breakdown voltage
(TLP733)
V
(BR)CBO
I
C
= 0.1 mA
80
V
Emitter
-base
breakdown voltage
(TLP733)
V
(BR)EBO
I
E
= 0.1 mA
7
V
V
CE
= 24 V
(ambient light
below
1000
x)
0.01
(2)
0.1
(10)
A
Collector dark current
I
CEO
V
CE
= 24 V
(ambient light
Ta = 85C
below 1000 x)
2
(4)
50
(50)
A
Collector dark current
(TLP733)
I
CER
V
CE
= 24 V, Ta = 85C
R
BE
= 1M
0.5 10 A
Collector dark current
(TLP733)
I
CBO
V
CB
= 10 V
0.1 nA
DC forward current gain
(TLP733)
h
FE
V
CE
= 5 V, I
C
= 0.5 mA
400
Det
e
c
t
or
Capacitance collector to
emitter
C
CE
V = 0, f = 1 MHz
10 pF
TLP733,TLP734
2002-09-25
4
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
MIn.
Typ.
Max.
Unit
50 -- 600
Current transfer ratio
I
C
/ I
F
I
F
= 5 mA, V
CE
= 5 V
Rank GB
100 -- 600
%
-- 60 --
Saturated CTR
I
C
/ I
F (sat)
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
30 -- --
%
Base photo
-current I
PB
I
F
= 5 mA, V
CB
= 5 V
--
10
--
%
I
C
= 2.4 mA, I
F
= 8 mA
--
--
0.4
-- 0.2 --
Collector
-emitter saturation
voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
-- -- 0.4
V
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance (input to output)
C
S
V
S
= 0, f = 1 MHz
--
0.8
--
pF
Isolation resistance
R
S
V
S
= 500 V, R.H. 60%
110
12
10
14
--
AC, 1 minute
4000
--
--
AC, 1 second, in oil
--
10000
--
Vrms
Isolation voltage
BV
S
DC, 1 minute, in oil
--
10000
--
Vdc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Rise time
t
r
-- 2 --
Fall time
t
f
-- 3 --
Turn
-on time
t
ON
-- 3 10
Turn
-off time
t
OFF
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
-- 3 10
s
Turn
-on time
t
ON
-- 3 --
Storage time
t
S
-- 40 --
Turn
-off time
t
OFF
R
L
= 1.9 k (Fig.1)
R
BE
= open
V
CC
= 5 V, I
F
= 16 mA
-- 90 --
s
Turn
-on time
t
ON
-- 3 --
Storage time
t
S
-- 30 --
Turn
-off time
t
OFF
R
L
= 1.9 k (Fig.1)
R
BE
= 220 k (TLP733)
V
CC
= 5 V, I
F
= 16 mA
-- 60 --
s
TLP733,TLP734
2002-09-25
5
Fig. 1 Switching time test circuit
t
OFF
t
ON
4.5V
V
CE
I
F
t
s
0.5V
V
CC
R
L
I
F
V
CE
R
BE
TLP733,TLP734
2002-09-25
6
V
F
/ Ta I
F
Forward current I
F
(mA)
Fo
rw
ar
d v
o
l
t
age
te
mp
er
atu
r
e c
o
e
f
fi
ci
e
n
t
V
F
/
T
a
(mV
/
C
)
-0.8
0.1
-2.8
50
-2.4
-2.0
-1.6
-1.2
3 10
0.3 1
-0.4
30
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
w
abl
e fo
rw
a
r
d
cu
rre
nt
I
F
(
m
A
)
0 20 40 60
120
60
40
20
100
0
-20
80
80 100
P
C
Ta
Ambient temperature Ta (C)
A
l
l
o
w
abl
e
col
l
ect
o
r pow
er di
ssi
p
a
ti
on
P
C
(mW
)
0 20
60 100
120
120
80
40
200
0
-20 40
80
160
I
FP
V
FP
Pulse forward voltage VF (V)
P
u
l
s
e f
o
rw
ar
d cu
rr
ent
I FP
(
m
A
)
1000
1
0.4
3
10
5
2.0 2.4
1.2 1.6
0.8
30
100
50
300
500
2.8
Pulse width 10 s
Repetitive
frequency = 100 Hz
Ta = 25C
I
FP
D
R
Duty cycle ratio D
R
P
u
l
s
e f
o
rw
ar
d cu
rr
ent
I
FP
(m
A
)
10
3000
3
300
1000
500
3 10
0
30
100
50
3 10
-1
3 10
-2
10
-3
Pulse width 100 s
Ta = 25C
I
F
V
F
Forward voltage V
F
(V)
Fo
rw
ar
d
c
u
r
r
en
t I
F
(m
A
)
100
0.1
1.0
50
10
5
3
1.2 1.4 1.6 1.8
30
1
0.5
0.3
0.6 0.8
Ta = 25C
TLP733,TLP734
2002-09-25
7
I
C
V
CE
Collector-emitter voltage V
CE
(V)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
2 4
8 10
30
20
10
50
0
0 6
40
Ta = 25C
20 mA
15 mA
10 mA
IF = 5 mA
50 mA
30 mA
PC (MAX.)
I
C
V
CE
Collector-emitter voltage V
CE
(V)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
0.2 0.4
0.8 1.2
15
10
5
30
0
0 0.6
1.0
20
25
Ta = 25C
20 mA
5 mA
10 mA
IF = 2 mA
50 mA
30 mA
40 mA
Forward current I
F
(mA)
I
C
I
F
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
3
1
30
0.01
10
0.3
0.03
0.1
1 10
300
0.1
3 30
0.3
100
Ta = 25C
VCE = 5 V
VCE = 0.4 V
SAMPLE A
SAMPLE B
Forward current I
F
(mA)
I
C
/ I
F
I
F
C
u
rr
ent
tr
ans
fer
r
a
ti
o
I C
/
I F
(%
)
1 10
100
300
100
50
1000
10
0.1
500
30
3 30
0.3
Ta = 25C
VCE = 5 V
VCE = 0.4 V
SAMPLE A
SAMPLE B
Forward current I
F
(mA)
TLP733 I
C
I
F
at R
BE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
1 10
100
50
3
100
0.1
0.1
1
30
3 30
0.3
10
0.3
500k
100k
50k
RBE=
Ta = 25C
VCE = 5 V
Forward current I
F
(mA)
TLP733 I
PB
I
F
B
a
se pho
to cur
r
e
n
t
I PB
(
A
)
1 10
100
300
100
3
1000
0.1
0.1
1
30
3 30
0.3
10
0.3
Ta = 25C
I
F
R
BE
V
CC
A
I
F
V
CB
A
V
CB = 0 V
V
CB = 5 V
TLP733,TLP734
2002-09-25
8
I
CEO
/ Ta
Ambient temperature Ta (C)
C
o
l
l
e
ct
or
da
rk
c
u
rr
en
t I
CE
O
(
A
)
10
1
10
-4
0
120
80 100
20 40 60
10
-1
10
-2
10
-3
10
0
Ambient light
Below = 0 x
VCE = 24 V
10 V
5 V
Ambient temperature Ta (C)
V
CE (sat)
Ta
C
o
l
l
e
c
t
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
a
ge
V
CE (sat)
(V
)
-20 0 20 40
100
0.16
0.12
0.08
0.24
0.04
-40
0.20
60 80
IF = 5 mA
IC = 1 mA
Load resistance R
L
(k)
TLP733
Switching Time R
L
SWIT
CHIN
G
T
I
M
E
(
s)
10 50 300
30
10
5
100
1
1
50
3
30 100
3 5
tOFF
ts
tON
Ta = 25C
IF = 16 mA
VCC = 5 V
RBE = 220k
I
C
Ta
Ambient temperature Ta (C)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
100
0.1
-40
3
100
1
0.5
40 60
-20 0 20
80
0.3
10
50
30
5
VCE = 5 V
1 mA
5 mA
10 mA
IF = 25 mA
0.5 mA
TLP733,TLP734
2002-09-25
9
Base emitter resistance R
BE
()
Switching
Time
R
BE
Switch
in
g
ti
m
e
(
s)
3M
30
10
5
50
1
100k
3
300k 1M
tON
tOFF
ts
Ta = 25C
IF = 16 mA
VCC = 5 V
RL = 1.9k
Load resistance R
L
(k)
Switching Time R
L
Switch
in
g
ti
m
e
(
s)
10 50
100
30
10
300
3000
1
1
1000
3
30
3 5
100
tOFF
ts
tON
Ta = 25C
IF = 16 mA
VCC = 5 V
TLP733,TLP734
2002-09-25
10
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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