The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-102930 Rev C
Sirenza Microdevices' XD010-22S-D2F 12W power module is a robust 2-
stage Class A/AB amplifier module for use in the driver stages of GSM/
EDGE RF power amplifiers for cellular base stations. The power transistors
are fabricated using Sirenza's latest, high performance LDMOS process.
This unit operates from a single voltage and has internal temperature com-
pensation of the bias voltage to ensure stable performance over the full
temperature range. It is a drop-in, no-tune solution for medium power
applications requiring high efficiency, excellent linearity, and unit-to-unit
repeatability. It is internally matched to 50 ohms.
Key Specifications
Symbol
Parameter
Unit
Min.
Typ.
Max.
Frequency
Frequency of Operation
MHz
1805
1880
P
1dB
Output Power at 1dB Compression (single tone)
W
10
12
Gain
Gain at 5W Output Power (CW)
dB
28.5
31
Gain Flatness
Peak to Peak Gain Variation
dB
0.5
1.0
IRL
Input Return Loss 5W Output (CW)
dB
10
14
Efficiency
Drain Efficiency at 10W CW
%
20
25
Linearity
RMS EVM at 5W EDGE output
%
1.5
Peak EVM at 5W EDGE output
%
5
3
rd
Order IMD at 10W PEP (Two Tone; 1MHz
F)
dBc
-26
-32
Delay
Electrical Delay
nS
2.5
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
0.5
R
TH, j-l
Thermal Resistance Stage 1 (Junction to Case)
C/W
11
R
TH, j-2
Thermal Resistance Stage 2 (Junction to Case)
C/W
4
Functional Block Diagram
XD010-22S-D2F
1805-1880 MHz Class A/AB
12W Power Amplifier Module
Product Features
Applications
50 W RF impedance
12W Output P
1dB
Single Supply Operation : Nominally 28V
High Gain: 31 dB at 1840 MHz
High Efficiency: 25% at 1840 MHz
Advanced, XeMOS II LDMOS FETS
Temperature Compensation
Base Station PA driver
Repeater
GSM / EDGE
Product Description
Test Conditions Z
in
= Z
out
= 50
, V
DD
= 28.0V, I
DQ1
= 230mA, I
DQ2
= 115mA, T
Flange
= 25C
4
Temperature
Compensation
5
3
2
1
Stage 1
Stage 2
RF in
RF out
V
D1
D2
V
Temperature
Compensation
Case Flange = Ground
XD010-22S-D2F 1805-1880 MHz 12W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
2
EDS-102930 Rev C
Simplified Device Schematic
Pin Description
Pin #
Function
Description
1
RF Input
Module RF input. Care must be taken to protect against video transients that may damage the active devices.
2
V
D1
This is the drain voltage for the first
stage of the amplifier module. The first
stage gate bias is temperature compensated to
maintain constant quiscent drain current over the operating temperature range. Nominally +28Vdc See Note 1.
3,4
V
D2
This is the drain voltage for the 2
nd
stage of the amplifier module. The 2
nd
stage gate bias is temperature compensated to
maintain constant quiscent drain current over the operating temperature range. Nominally +28Vdc See Note 1.
5
RF Output
Module RF output. Care must be taken to protect against video transients that may damage the active devices.
Flange
Gnd
Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for
optimum thermal and RF performance. See mounting instructions in application note AN-060 on Sirenza's web site.
Note 1:
The internally generated gate voltage is thermally compen-
sated to maintain constant quiescent current over the temper-
ature range listed in the data sheet. No compensation is
provided for gain changes with temperature. This can only be
accomplished with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the drain leads to
accommodate time-varying waveforms.
Note 3:
This module was designed to have its leads hand soldered to
an adjacent PCB. The maximum soldering iron tip tempera-
ture should not exceed 700 C, and the soldering iron tip
should not be in direct contact with the lead for longer than 10
seconds. Refer to app note AN060 (www.sirenza.com) for fur-
ther installation instructions.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Parameter
Unit
Typical
ESD Rating
Human Body Model, JEDEC Document - JESD22-A114-B
V
8000
MTTF
85
o
C Leadframe, 200
o
C Channel
Hours
1.2 X 10
6
Quality Specifications
Absolute Maximum Ratings
Parameters
Value
Unit
1
st
Stage Bias Voltage (V
D1
)
35
V
2
nd
Stage Bias Voltage (V
D2
)
35
V
RF Input Power
+20
dBm
Load Impedance for Continuous Operation With-
out Damage
5:1
VSWR
Output Device Channel Temperature
+200
C
Operating Temperature Range
-20 to +90
C
Storage Temperature Range
-40 to +100
C
Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation see typical setup val-
ues specified in the table on page one.
Temperature
Compensation
RF
in
1
Q1
Q2
2
3
5
RF
out
Case Flange = Ground
D1
V
V
D2
Temperature
Compensation
4
XD010-22S-D2F 1805-1880 MHz 12W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
3
EDS-102930 Rev C
Two Tone IMD vs. Output Power and Temperature
Freq=1840 MHz, Vdd=28 V, T
Flange
=-20C, 25C, 90C
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
Output Power (W)
IM
D
(
d
B
c
)
IMD @-20C
IMD @ 25C
IMD @ 90C
Gain, EVM vs. Output Power and Voltage
Freq=1840 MHz, Vdd=24 V, 28 V, 32 V, T
Flange
= 25C
0
5
10
15
20
25
30
0
2
4
6
8
10
12
Output Power (W)
G
a
i
n
(
d
B)
, E
V
M
(
%
)
Gain @ 24VDC
Gain @ 28VDC
Gain @ 32VDC
EVM @ 24VDC
EVM @ 28VDC
EVM @ 32VDC
EVM, Id vs. Output Power and Temperature
Freq=1840 MHz, Vdd=28 V, T
Flange
=-20C, 25C, 90C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
6
Output Power (W)
EV
M
(
%
)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Id
(
A
m
p
s)
EVM @-20C
EVM @ 25C
EVM @ 90C
Id @-20C
Id @ 25C
Id @ 90C
Typical Performance Curves
Gain, Efficiency, EVM vs. Frequency
Freq=1840 MHz, Vdd=28 V, T
Flange
= 25C
0
5
10
15
20
25
30
35
1790
1800
1810
1820
1830
1840
1850
1860
1870
1880
1890
Frequency (MHz)
G
a
i
n
(d
B
)
,
E
f
f
i
c
i
e
n
c
y
(%
),
E
V
M
(%
)
Gain
Efficiency
EVM
Gain, Efficiency, EVM vs. Output Power
Freq=1840 MHz, Vdd=28 V, T
Flange
= 25C
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
Output Power (W)
G
a
i
n
(d
B
)
,
E
f
f
i
c
i
e
n
c
y
(%
),
E
V
M
(%
)
Gain
Efficiency
EVM
Gain, Efficiency vs. Output Power and Temperature
Freq=1840 MHz, Vdd=28 V, T
Flange
=-20C, 25C, 90C
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
Output Power (W)
G
a
i
n
(
d
B)
, E
f
fi
c
i
e
n
c
y
(
%
)
Gain @-20C
Gain @ 25C
Gain @ 90C
Efficiency @-20C
Efficiency @ 25C
Efficiency @ 90C
XD010-22S-D2F 1805-1880 MHz 12W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
4
EDS-102930 Rev C
Test Board Schematic with module attachments shown
Test Board Layout
To receive Gerber files, DXF drawings, a detailed BOM, and assembly recommendations for the test board with fixture, contact applications
support at
support@sirenza.com.
Data sheet for evaluation circuit (XD010-EVAL) available from Sirenza website.
Component
Description
Manufacturer
PCB
Rogers 4350, e
r
=3.5
Thickness=30mils
Rogers
J1, J2
SMA, RF, Panel Mount Tab W /
Flange
Johnson
J3
MTA Post Header, 6 Pin, Rect-
angle, Polarized, Surface
Mount
AMP
C1, C10
Cap, 10mF, 35V, 10%, Tant,
Elect, D
Kemet
C2, C20
Cap, 0.1mF, 100V, 10%, 1206
Johanson
C3, C30
Cap, 1000pF, 100V, 10%, 1206
Johanson
C25, C26
Cap, 68pF, 250V, 5%, 0603
ATC
C21, C22
Cap, 0.1mF, 100V, 10%, 0805
Panasonic
C23, C24
Cap, 1000pF, 100V, 10%, 0603
AVX
Mounting
Screws
4-40 X 0.250"
Various
Test Board Bill of Materials
XD010-22S-D2F 1805-1880 MHz 12W Power Amp Module
303 S. Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
5
EDS-102930 Rev C
Package Outline Drawing
Recommended PCB Cutout and Landing Pads for the D2F Package
Note 3: Dimensions are in inches
Refer to Application note AN-060 "Installation Instructions for XD Module Series" for additional mounting info. App note availbale at at www.sirenza.com
PDF 
ZIP