Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
400
V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
= 112 C
0.5
A
I
T(RMS)
R.M.S On-State Current
All Conduction Angle
0.8
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
10
A
I
2
t
I
2
t
for Fusing
t = 8.3ms
0.415
A
2
s
P
GM
Forward Peak Gate Power Dissipation
2
W
P
G(AV)
Forward Average Gate Power Dissipation
0.1
W
I
FGM
Forward Peak Gate Current
1
A
V
RGM
Reverse Peak Gate Voltage
5.0
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
MCK100-6
Oct, 2003. Rev. 2
Features
Repetitive Peak Off-State Voltage : 400V
R.M.S On-State Current ( I
T(RMS)
= 0.8 A )
Low On-State Voltage (1.2V(Typ.)@ I
TM
)
Available with tape & reel
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
3. Gate
1. Cathode
Symbol
1/5
SemiWell
Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
SOT- 89
1
2
3
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Electrical Characteristics
( T
C
= 25 C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
AK
= V
DRM
or V
RRM ;
R
GK
=
1000
T
C
= 25 C
T
C
= 125 C
10
200
V
TM
Peak On-State Voltage (1)
( I
TM
= 1 A, Peak )
1.2
1.7
V
I
GT
Gate Trigger Current (2)
V
AK
= 6 V, R
L
=100
T
C
= 25 C
T
C
= - 40 C
200
500
V
GT
Gate Trigger Voltage (2)
V
D
= 7 V, R
L
=100
T
C
= 25 C
T
C
= - 40 C
0.8
1.2
V
V
GD
Non-Trigger Gate Voltage (1)
V
AK
= 12 V, R
L
=100
T
C
= 125 C
0.2
V
dv/dt
Critical Rate of Rise Off-State
Voltage
V
D
= Rated V
DRM ,
Exponential wave-
form , R
GK
= 1000
T
J
= 125 C
500
800
V/
di/dt
Critical Rate of Rise On-State
Current
I
PK
= 20A ; P
W
= 10
;
di
G
/dt = 1A/
Igt = 20mA
50
A/
I
H
Holding Current
V
AK
= 12 V, Gate Open
Initiating Curent = 20mA
T
C
= 25 C
T
C
= - 40 C
2
5.0
10
mA
R
th(j-c)
Thermal Impedance
Junction to case
15
C/W
R
th(j-a)
Thermal Impedance
Junction to Ambient
125
C/W
MCK100-6
2/5
Notes :
1. Pulse Width
1.0 ms , Duty cycle
1%
2. Does not include R
GK
in measurement.
-50
0
50
100
150
0.1
1
10
I
GT
(t
o
C)
I
GT
(2
5
o
C)
Junction Temperature[
o
C]
10
-2
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
R
(J-C)
T
r
an
sie
n
t
T
h
e
r
m
a
l I
m
pe
da
nc
e
[
o
C/W
]
Time (sec)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-1
10
0
10
1
125
o
C
25
o
C
O
n
-S
ta
te
C
u
rre
n
t
[A
]
On-State Voltage [V]
10
0
10
1
10
2
10
3
10
4
10
-1
10
0
10
1
I
GM
(1
A
)
V
GD
(0.2V)
P
G(AV)
(0.1W)
P
GM
(2W)
V
GM
(5V)
25
o
C
G
a
te
V
o
l
t
ag
e [
V
]
Gate Current [mA]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
20
40
60
80
100
120
140
160
= 180
o
M
a
x
.
Al
low
a
ble Case Tem
per
a
t
ur
e
[
o
C]
Average On-State Current [A]
MCK100-6
Fig 2. Maximum Case Temperature
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 1. Gate Characteristics
: Conduction Angl e
360
2
3/5
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
GT
(25
o
C)
Junction Temperature[
o
C]
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