Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- MARKING
- QUICK REFERENCE DATA
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
Supersedes data of 2003 Jan 20
2003 May 13
DISCRETE SEMICONDUCTORS
PBSS4350Z
50 V low V
CEsat
NPN transistor
dbook, halfpage
M3D087
2003 May 13
2
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
FEATURES
Low collector-emitter saturation voltage
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
Higher efficiency leading to less heat generation
Reduced PCB area requirements compared to DPAK.
APPLICATIONS
Power management
DC/DC converters
Supply line switching
Battery charger
Linear voltage regulation (LDO).
Peripheral drivers
Driver in low supply voltage applications, e.g. lamps,
LEDs
Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTION
NPN low V
CEsat
transistor in a SOT223 plastic package.
PNP complement: PBSS5350Z.
MARKING
TYPE NUMBER
MARKING CODE
PBSS4350Z
PB4350
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
4
collector
handbook, halfpage
4
1
2
3
MAM287
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
collector-emitter voltage
50
V
I
CM
peak collector current
5
A
R
CEsat
equivalent on-resistance
<145
m
2003 May 13
3
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see
"Thermal considerations for SOT223 in the General Part of associated
Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
60
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
6
V
I
C
collector current (DC)
-
3
A
I
CM
peak collector current
-
5
A
I
BM
peak base current
-
1
A
P
tot
total power dissipation
T
amb
25
C; notes 1 and 3
-
1.35
W
T
amb
25
C; notes 2 and 3
-
2
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air; notes 1 and 3
92
K/W
in free air; notes 2 and 3
62.5
K/W
2003 May 13
4
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
= 50 V; I
E
= 0
-
-
100
nA
V
CB
= 50 V; I
E
= 0; T
j
= 150
C
-
-
50
A
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
100
nA
h
FE
DC current gain
V
CE
= 2 V; I
C
= 500 mA
200
-
-
V
CE
= 2 V; I
C
= 1 A; note 1
200
-
-
V
CE
= 2 V; I
C
= 2 A; note 1
100
-
-
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
-
-
90
mV
I
C
= 1 A; I
B
= 50 mA
-
-
170
mV
I
C
= 2 A; I
B
= 200 mA; note 1
-
-
290
mV
R
CEsat
equivalent on-resistance
I
C
= 2 A; I
B
= 200 mA; note 1
-
110
<145
m
V
BEsat
base-emitter saturation voltage
I
C
= 2 A; I
B
= 200 mA; note 1
-
-
1.2
V
V
BEon
base-emitter turn-on voltage
V
CE
= 2 V; I
C
= 1 A; note 1
-
-
1.1
V
f
T
transition frequency
I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz
100
-
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
-
-
30
pF
2003 May 13
5
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
handbook, halfpage
0
hFE
IC (mA)
600
100
200
300
500
400
MGW175
10
-
1
1
10
10
2
10
3
10
4
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
V
CE
= 2 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
0
0.2
IC (mA)
VBE
(V)
1.2
0.4
0.8
0.6
1.0
MGW176
10
-
1
1
10
10
2
10
3
10
4
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector-current; typical values.
V
CE
= 2 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25 C.
(3) T
amb
= 150
C.
handbook, halfpage
IC (mA)
10
3
10
2
10
1
MGW181
10
-
1
1
10
10
2
10
3
10
4
VCEsat
(mV)
(1)
(2)
(3)
Fig.4
Collector-emitter saturation as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
IC (mA)
1.2
0.6
0.4
0.2
0
0.8
1.0
MGW178
10
-
1
1
10
10
2
10
3
10
4
VBEsat
(V)
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
2003 May 13
6
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
handbook, halfpage
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
2
1200
1000
0
200
400
600
800
0.4
0.8
1.2
1.6
MGW179
VCE (V)
IC
(mA)
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 3.96 mA.
(2) I
B
= 3.63 mA.
(3) I
B
= 3.30 mA.
(4) I
B
= 2.97 mA.
(5) I
B
= 2.64 mA.
(6) I
B
= 2.31 mA.
(7) I
B
= 1.98 mA.
(8) I
B
= 1.65 mA.
(9) I
B
= 1.32 mA.
(10) I
B
= 0.99 mA.
(11) I
B
= 0.66 mA.
(12) I
B
= 0.33 mA.
V
CE
= 5 V.
handbook, halfpage
0
(4)
(3)
(2)
(5)
(6)
(7)
(8)
(9)
(10)
2
5
0
1
2
3
4
0.4
0.8
1.2
1.6
MGW180
VCE (V)
IC
(A)
(1)
Fig.7
Collector current as a function of
collector-emitter voltage; typical values.
V
CE
= 5 V.
(1) I
B
= 150 mA.
(2) I
B
= 135 mA.
(3) I
B
= 120 mA.
(4) I
B
= 105 mA.
(5) I
B
= 90 mA.
(6) I
B
= 75 mA.
(7) I
B
= 60 mA.
(8) I
B
= 45 mA.
(9) I
B
= 30 mA.
(10) I
B
= 15 mA.
handbook, halfpage
IC (mA)
10
3
10
2
10
-
1
10
-
2
10
1
MGW182
10
-
1
1
10
10
2
10
3
10
4
RCEsat
(
)
(1)
(2)
(3)
Fig.8
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
2003 May 13
7
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
SC-73
97-02-28
99-09-13
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
2003 May 13
8
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 May 13
9
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
NOTES
2003 May 13
10
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
NOTES
2003 May 13
11
Philips Semiconductors
Product specification
50 V low V
CEsat
NPN transistor
PBSS4350Z
NOTES
Koninklijke Philips Electronics N.V. 2003
SCA75
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
613514/03/pp
12
Date of release:
2003 May 13
Document order number:
9397 750 11057
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