Philips Semiconductors
Product specification
Thyristors
BT258U series
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate thyristors
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
in a plastic envelope, intended for use
in general purpose switching and
BT258U-
500R
600R
800R
phase control applications. These
V
DRM
,
Repetitive peak off-state
500
600
800
V
devices are intended to be interfaced
V
RRM
voltages
directly
to
microcontrollers,
logic
I
T(AV)
Average on-state current
5
5
5
A
integrated circuits and other low
I
T(RMS)
RMS on-state current
8
8
8
A
power gate trigger circuits.
I
TSM
Non-repetitive peak on-state
75
75
75
A
current
PINNING - SOT533
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
NUMBER
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
V
DRM
, V
RRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(AV)
Average on-state current
half sine wave; T
mb
111 C
-
5
A
I
T(RMS)
RMS on-state current
all conduction angles
-
8
A
I
TSM
Non-repetitive peak
half sine wave; T
j
= 25 C prior to
on-state current
surge
t = 10 ms
-
75
A
t = 8.3 ms
-
82
A
I
2
t
I
2
t for fusing
t = 10 ms
-
28
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 10 A; I
G
= 50 mA;
-
50
A/
s
on-state current after
dI
G
/dt = 50 mA/
s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
2
C
temperature
1
Top view
MBK915
2
3
a
k
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
2 Note: Operation above 110C may require the use of a gate to cathode resistor of 1k
or less.
March 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT258U series
logic level
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
-
-
2.0
K/W
junction to mounting base
R
th j-a
Thermal resistance
in free air
-
70
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
-
50
200
A
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
-
0.4
10
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
0.3
6
mA
V
T
On-state voltage
I
T
= 16 A
-
1.3
1.5
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.4
1.5
V
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 110 C
0.1
0.2
-
V
I
D
, I
R
Off-state leakage current
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 C;
50
100
-
V/
s
off-state voltage
exponential waveform; R
GK
= 100
t
gt
Gate controlled turn-on
I
TM
= 10 A; V
D
= V
DRM(max)
; I
G
= 5 mA;
-
2
-
s
time
dI
G
/dt = 0.2 A/
s
t
q
Circuit commutated
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
-
100
-
s
turn-off time
I
TM
= 12 A; V
R
= 24 V; dI
TM
/dt = 10 A/
s;
dV
D
/dt = 2 V/
s; R
GK
= 1 k
March 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT258U series
logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
111C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
BT150
IT(AV) / A
Ptot / W
Tmb(max) / C
125
123
121
119
117
115
113
111
109
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
BT258
1
10
100
1000
0
40
Number of half cycles at 50Hz
ITSM / A
10
20
30
50
60
70
80
T
ITSM
time
I
T
Tj initial = 25 C max
10
100
1000
BT150
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01
0.1
1
10
0
4
8
12
16
20
24
BT150
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
1
2
3
4
5
6
7
8
9
BT258
Tmb / C
IT(RMS) / A
111 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
March 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT258U series
logic level
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT150
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
5
10
15
20
25
30
typ
BT150+
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 0.99 V
Rs = 0.0325 ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT150
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
BT150
tp / s
Zth j-mb (K/W)
t
p
P
t
D
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT150
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 100 ohms
March 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT258U series
logic level
MECHANICAL DATA
Dimensions in mm Net Mass: 1.3 g
Fig.13. SOT533 (TO251). pin 2 connected to mounting base.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT533
99-02-18
TO-251
0
2.5
5 mm
scale
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
SOT533
UNIT
D
e
Q
L
c
e1
A
2.285
mm
2.38
2.22
7.28
6.94
A1
0.89
0.71
b
0.89
0.71
0.56
0.46
E1
D1
1.06
0.96
E
6.73
6.47
5.36
5.26
4.57
9.8
9.4
1.00
1.10
DIMENSIONS (mm are the original dimensions)
D
D1
L
1
2
3
mounting
base
e1
e
Q
b
A
E
E1
A1
c
w
M
March 1999
5
Rev 1.000
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