1
Composite Transistors
XP8081
Silicon N-channel junction FET (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For analog switching (Tr1)/switching (Tr2)
s
Features
q
Two elements incorporated into one package.
q
Reduction of the mounting area and assembly cost by one half.
s
Basic Part Number of Element
q
2SK1103+UN1213 (transistors with built-in resistor)
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
9Z
Internal Connection
Parameter
Symbol
Ratings
Unit
Gate to drain voltage
V
GDS
50
V
Drain current
I
D
20
mA
Gate current
I
G
10
mA
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
Tr1
Overall
Tr2
1 : Drain (Tr1)
4 : Emitter (Tr2)
2 : Source (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2) 6 : Gate (Tr1)
EIAJ : SC88
SMini Type Package (6pin)
2.1
0.1
0.2
0.05
0.65
0.65
2.0
0.1
0.9
0.1
0 to 0.1
1.25
0.1
0.425
0.425
1
2
3
6
5
4
0.2
0.1
0.7
0.1
0.2
0.12
+0.05
0.02
1
Tr2
Tr1
2
3
4
6
5
2
Composite Transistors
XP8081
s
Electrical Characteristics
(Ta=25C)
q
Tr1
q
Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
Emitter cutoff current
I
EBO
V
EB
= 6V, I
C
= 0
0.1
mA
Forward current transfer ratio
h
FE
V
CE
= 10V, I
C
= 5mA
80
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
0.2
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
150
MHz
Input resistance
R
1
30%
47
+30%
k
Resistance ratio
R
1
/R
2
0.8
1.0
1.2
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate to drain voltage
V
GDS
I
G
= 10
A, V
DS
= 0
50
V
Drain current
I
DSS
V
DS
= 10V, V
GS
= 0
0.2
2.2
mA
Gate cutoff current
I
GSS
V
GS
= 30V, V
DS
= 0
10
nA
Gate to source cutoff voltage
V
GSC
V
DS
= 10V, I
D
= 10
A
1.0
V
Mutual conductance
gm
V
DS
= 10V, I
D
= 1mA, f = 1kHz
1.8
2.5
mS
Drain resistance
R
DS(on)
V
DS
= 10mV, V
GS
= 0
400
Common source short-circuit input capacitance
C
iss
V
DS
= 10V, V
GS
= 0, f = 1MHz
7
pF
Common source reverse transfer capacitance
C
rss
V
DS
= 10V, V
GS
= 0, f = 1MHz
1.5
pF
Common source short-circuit output capacitance
C
oss
V
DS
= 10V, V
GS
= 0, f = 1MHz
1.5
pF
3
Composite Transistors
Common characteristics chart
P
T
-- Ta
I
D
-- V
DS
I
D
-- V
GS
| Y
fs
| -- V
GS
| Y
fs
| -- I
D
C
iss
, C
rss
, C
oss
-- V
DS
Characteristics charts of Tr2
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
XP8081
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
0
6
1
5
2
4
3
Drain to source voltage V
DS
(V)
Drain current I
D
(mA
)
0
0.5
1.0
1.5
2.5
2.0
Ta=25C
0.4V
0.3V
0.2V
0.1V
V
GS
=0V
Gate to source voltage V
GS
(V)
Drain current I
D
(mA
)
1.2
0
1.0
0.2
0.8
0.4
0.6
0
0.5
1.0
1.5
2.5
2.0
Ta=25C
25C
75C
Forward transfer admittance |Y
fs
|
(mS
)
Gate to source voltage V
GS
(V)
0
1
2
3
5
4
1.6
1.2
0.8
0.4
0
V
DS
=10V
Ta=25C
I
DSS
=10mA
Forward transfer admittance |Y
fs
|
(mS
)
0
0.5
1.0
1.5
2.5
2.0
0
2
4
6
8
Drain current I
D
(mA)
V
DS
=10V
Ta=25C
I
DSS
=10mA
0
1
10
8
6
4
2
10
100
Common source short-circuit input capacitance,
Common source reverse transfer capacitance,
Common source short-circuit output capacitance
C
iss
, C
rss
, C
oss
(pF)
Drain to source voltage V
DS
(V)
V
GS
=0
f=1MHz
Ta=25C
C
iss
C
rss
C
oss
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
4
Composite Transistors
XP8081
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
PDF 
ZIP