Composite Transistors
1
Publication date: March 2004
SJJ00246CED
XN09D58
Silicon PNP epitaxial planar type (Tr)
Silicon epitaxial planar type (SBD)
For DC-DC converter
Features
Two elements incorporated into one package (Tr + SBD)
Reduction of the mounting area and assembly cost by one half
Low collector-emitter saturation voltage V
CE(sat)
Basic Part Number
XN9D57 + MA3ZD12
Absolute Maximum Ratings T
a
= 25C
Marking Symbol: EF
Internal Connection
Unit: mm
4
3
6
1
2
5
Note) *: Measuring on ceramic substrate at 15 mm
15 mm 0.6 mm
2.90
1.9
0.1
0.16
+0.10
0.06
2.8
+0.2 0.3
1.1
+0.3 0.1
1.1
0 to 0.1
+0.2 0.1
1.50
(0.65)
0.4
0.2
+0.25 0.05
(0.95)
0.50
+0.10
0.05
0.30
+0.10
0.05
(0.95)
4
5
6
3
1
2
+0.20
0.05
5
10
Display at No.1 lead
Parameter
Symbol
Rating
Unit
Tr
Collector-base voltage
V
CBO
-15
V
(Emitter open)
Collector-emitter voltage
V
CEO
-15
V
(Base open)
Emitter-base voltage
V
EBO
-5
V
(Collector open)
Collector current
I
C
-2.5
A
Peak collector current
I
CP
-10
A
SBD
Reverse voltage
V
R
20
V
Repetitive peak reverse voltage
V
RRM
25
V
Forward current (Average)
I
F(AV)
700
mA
Non-repetitive peak
I
FSM
2
A
forward surge current
Overall
Total power dissipation
*
P
T
600
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -1 mA, I
B
= 0
-15
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -10 V, I
E
= 0
- 0.1
A
Forward current transfer ratio
*
h
FE1
V
CE
= -2 V, I
C
= -100 mA
200
560
h
FE2
V
CE
= -2 V, I
C
= -2.5 A
100
Collector-emitter saturation voltage
*
V
CE(sat)
I
C
= -1 A, I
B
= -10 mA
-140
mV
I
C
= -2.5 A, I
B
= -50 mA
-270
-320
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Electrical Characteristics T
a
= 25C 3C
Tr
1: Emitter
4: Collector (Cathode)
2: Base
5: Collector (Cathode)
3: Anode
6: Collector (Cathode)
Mini6-G1 Package
XN09D58
2
SJJ00246CED
Common characteristics chart
P
T
T
a
Electrical Characteristics (continued) T
a
= 25C 3C
Tr (continued)
SBD
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 700 mA
0.45
V
Reverse current
I
R
V
R
= 20 V
200
A
Terminal capacitance
C
t
V
R
= 0, f = 1 MHz
100
pF
Reverse recovery time
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA
7
ns
R
L
= 100
Switching time measurement circuit
470
F
V
CC
= -5 V
R
L
Output
Input
R
B
I
B2
I
B1
-20I
B1
= 20I
B2
= I
C
= -1.5 A
PW
= 20 s
DC
1%
0
200
400
600
0
40
80
120
Total power dissipation
P
T
(mW)
Ambient temperature T
a
(
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
40
pF
(Common base, input open circuited)
Transition frequency
f
T
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
180
MHz
Turn-on time
t
on
Refer to the switching time measurement circuit
35
ns
Storage time
t
stg
110
ns
Turn-off time
t
off
10
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for diodes.
2. Schottky barrier diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static
electricity level.
XN09D58
3
SJJ00246CED
Characteristics charts of Tr
C
ob
V
CB
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of SBD
I
F
V
F
I
R
T
a
C
t
V
R
0
- 0.04
- 0.08
- 0.12
- 0.16
- 0.20
0
-2
-4
-6
-8
T
a
= 25C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
I
B
= -300 A
-250 A
-200 A
-150 A
-100 A
-50 A
I
C
/ I
B
= 50
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
T
a
= 75C
-25C
- 0.01
- 0.1
-1
-10
- 0.01
- 0.1
-1
-10
25
C
0
100
200
300
400
500
600
V
CE
= -2 V
Forward current transfer ratio h
FE
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
T
a
= 75C
-25C
25
C
10
100
Collector-base voltage V
CB
(V)
f
= 1 MHz
T
a
= 25C
0
-4
-8
-12
-16
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0
1.2
0
1.2
0.8
0.4
0.4
0.8
Forward voltage V
F
(V)
Forward current I
F
(A)
T
a
= 85C
25
C
-25C
-25
1
Ambient temperature T
a
(
C)
Reverse current I
R
(mA
)
-5
15
35
55
75
10
10
2
10
4
10
3
10
1 000
100
0
20
10
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF
)
f
= 1 MHz
T
a
= 25C
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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