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Электронный компонент: PNA3W01L

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PIN Photodiodes
1
Publication date: April 2004
SHE00029BED
PNA3W01L
(PN307)
Silicon planar type
For optical control systems
Features
High sensitivity, high reliability
Peak emission wavelength matched with infrared light emitting
diodes:
p
= 800 nm (typ.)
Double end type small size package
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Power dissipation
P
D
10
mW
Operating ambient temperature
T
opr
-25 to +85
C
Storage temperature
T
stg
-30 to +100
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dark current
I
D
V
R
= 10 V
50
nA
Photocurrent
*1
I
L
V
R
= 10 V, L = 1 000 lx
5
A
Peak emission wavelength
p
V
R
= 10 V
800
nm
Rise time
*2
t
r
V
R
= 10 V, R
L
= 1 k
50
ns
Fall time
*2
t
f
50
ns
Rise time
*2
t
r
V
R
= 10 V, R
L
= 100 k
5
s
Fall time
*2
t
f
5
s
Half-power angle
The angle from which photocurrent
24
becomes 50%
Electrical-Optical Characteristics T
a
= 25C 3C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Unit: mm
1: Cathode
2: Anode
LTTLW102-001 Package
2.8
0.2
3.2
0.3
0.5
0.1
(0.15)
45
1
2
10.0 min.
Type number : cathode mark (Purple)
10.0 min.
3.2
0.3
(1.8)
(1.8)
(0.7)
(0.7)
0.4
0.1
2.2
0.15
2.8
0.2
1.05
0.1
0.85
0.15
R0.9
(1.8)
50
P
= 800 nm
t
r
: Rise time
t
f
:
Fall time
Sig. in
R
L
V
CC
Sig. out
(Input pulse)
(Output pulse)
10%
90%
t
r
t
f
Note) The part number in the parenthesis shows conventional part number.
PNA3W01L
2
SHE00029BED
I
L
T
a
Spectral sensitivity characteristics
Directivity characteristics
P
D
T
a
I
L
L
I
D
T
a
I
D
V
R
t
r
, t
f
R
L
14
12
10
8
6
2
4
0
0
20
40
60
80
100
-20
160
120
80
40
0
-40
0
40
80
100
80
60
40
20
0
200
400
600
800
1 200
1 000
Power dissipation P
D
(mW
)
Ambient temperature T
a
(
C)
Relative sensitivity
S
(%
)
Wavelength
(nm)
Relative photocurrent
I
L
(%)
Ambient temperature T
a
(
C)
V
R
= 10 V
T
a
= 25C
T
= 2 856 K
V
R
= 10 V
L
= 1 000 lx
T
= 2 856 K
V
R
= 10 V
10
3
10
2
10
1
10
-
1
10
10
2
10
4
10
3
10
-
2
1
10
3
10
2
1
10
0
40
80
10
-
1
-40
Photocurrent I
L
(
A
)
Illuminance L (lx)
Dark current I
D
(nA)
Ambient temperature T
a
(
C)
100
80
60
40
20
T
a
= 25C
V
R
= 10 V
T
a
= 25C
80
0
40
40
80
0
10
1
10
-
1
T
a
= 25C
0
8
16
24
32
10
2
1
10
10
-
1
1
10
10
2
10
-
2
10
-
1
Relative sensitivity
S
(%
)
Half-power angle
()
Dark current I
D
(nA)
Reverse voltage V
R
(V)
Rise time
t
r
,
Fall time
t
f
(
s)
Load resistance R
L
(k
)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP