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Электронный компонент: CNZ1111

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1
Transmissive Photosensors (Photo Interrupters)
2
3
1
4
2
3
1
4
SEC. A-A'
Mark for indicating
LED side
2.5
0.2
6.2
0.2
10.0
0.2
6.0 min.
0.45
0.1
2-0.45
0.2
A
13.0
0.3
5.0
0.2
0.45
0.1
(10.0)
(2.54)
A'
2.2
0.2
2.0
0.2
Device
center
Pin connection
Unit : mm
Pin connection
Unit : mm
CNZ1111
CNZ1112
Mark for indicating
LED side
2.5
0.2
6.2
0.2
10.0
0.2
6.0 min.
0.45
0.1
2-0.45
0.2
A
13.0
0.3
19.0
0.2
2-3.2
0.2
25.0
0.35
5.0
0.2
0.45
0.1
(10.0)
(2.54)
A'
SEC. A-A'
2.2
0.2
2.0
0.2
Device
center
2
3
1
4
2
3
1
4
(Note) ( ) Dimension is reference
(Note) ( ) Dimension is reference
CNZ1111,CNZ1112
Photo Interrupters
For contactless SW, object detection
Features
Highly precise position detection : 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response : t
r
, t
f
= 6
s (typ.)
Small output current variation against change in temperature
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
3
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector current
I
C
20
mA
Output (Photo Collector to emitter voltage
V
CEO
30
V
transistor)
Emitter to collector voltage
V
ECO
5
V
Collector power dissipation
P
C
*2
100
mW
Temperature
Operating ambient temperature
T
opr
25 to +85
C
Storage temperature
T
stg
30 to +100
C
*1
Input power derating ratio is 1.0 mW/C at Ta
25C.
*2
Output power derating ratio is 1.33 mW/C at Ta
25C.
Overview
CNZ1111 and CNZ1112 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
2
Transmissive Photosensors (Photo Interrupters)
CNZ1111,CNZ1112
,,
,
,
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
60
50
40
30
20
10
Ambient temperature Ta (C )
0
20
40
60
80
100
0
25
I
F
-- V
F
60
30
20
10
50
40
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4
0.8
1.2
1.6
2.4
2.0
0
0
Ta = 25C
I
C
-- I
F
10
1
10
1
10
2
Forward current I
F
(mA)
Collector current I
C
(mA)
1
10
10
2
10
3
10
1
V
CE
= 10V
Ta = 25C
I
F
, I
C
-- Ta
Forward current, collector current I
F
, I
C
(mA)
I
F
I
C
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 50mA
1.2
1.5
V
characteristics Reverse current (DC)
I
R
V
R
= 3V
10
A
Output
Collector cutoff current
I
CEO
V
CE
= 10V
200
nA
characteristics Collector to emitter capacitance
C
C
V
CE
= 10V, f = 1MHz
5
pF
Transfer
Collector current
I
C
V
CE
= 10V, I
F
= 20mA
0.3
mA
characteristics
Response time
t
r
, t
f
*
V
CC
= 10V, I
C
= 1mA, R
L
= 100
6
s
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.3
V
*
Switching time measurement circuit
3
CNZ1111,CNZ1112
Transmissive Photosensors (Photo Interrupters)
V
F
-- Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (C )
Forward voltage V
F
(V)
0
20
40
60
80
100
0
40 20
0
20
40
60
80
100
40 20
0
20
40
60
80
100
40 20
I
C
-- V
CE
10
2
10
1
10
1
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
1
10
10
2
10
2
10
1
Ta = 25C
Ambient temperature Ta (C )
Relative output current I
C
(%)
I
C
-- Ta
160
120
80
40
0
V
CE
= 10V
I
F
= 20mA
I
CEO
-- Ta
10
10
2
1
10
3
10
1
Ambient temperature Ta (C )
Dark current I
CEO
(
A)
10
4
1
10
10
1
t
r
-- I
C
10
1
Collector current I
C
(mA)
Rise time t
r
(
s)
10
1
10
2
10
3
10
2
V
CC
= 10V
Ta = 25C
I
C
-- d
100
60
40
20
80
Distance d (mm)
Relative output current I
C
(%)
1
2
6
5
4
3
0
0
V
CE
= 10V
Ta = 25C
I
F
= 20mA
10mA
I
F
= 50mA
I
F
= 30mA
20mA
10mA
V
CE
= 24V
10V
100
R
L
= 1k
500
d
10%
90%
t
d
t
r
t
f
R
L
V
CC
V
1
V
2
V
1
V
2
Sig.
OUT
50
Sig.IN
,
,
,
Criterion
0