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Электронный компонент: NCN4557

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Semiconductor Components Industries, LLC, 2006
June, 2006 - Rev. 0
1
Publication Order Number:
NCN4557/D
NCN4557
1.8 V/3.0 V Dual SIM/SAM/
Smart Card Power Supply
and Level Shifter
The NCN4557 is a dual interface analog circuit designed to
translate the voltages between SIM, SAM or Smart Cards and a
microcontroller (or similar control device). It integrates two LDOs
for power conversion and three level shifters per channel allowing
the management of two independent chip cards. The device fulfills
the ISO7816 and EMV smart card interface requirements as well as
the GSM and 3G mobile standard. Due to a built-in sequencer, the
device enables automatic activation and deactivation. Through the
ENABLE pin a low current shutdown mode can be activated
extending the battery life.
The card power supply voltage (1.8 V or 3.0 V) and the card socket
A or B are selected using two dedicated pins (SEL0 & SEL1).
Features
Supports 1.8 V or 3.0 V Operating SIM/SAM/Smart Cards
The LDOs are able to Supply more than 50 mA Under 1.8 V and
3.0 V
Built-in Active and Passive Pullup Resistor for I/O and
CRD_IOA/B Pins in Both Directions
All Pins are Fully ESD Protected According to ISO-7816
Specifications ESD Protection on Card Pins in Excess of 8.0 kV
(JEDEC HBM)
Built-in Sequencer for Activation and Deactivation
Supports up to more than 5.0 MHz Clock
Very Compact Low-Profile 3x3 QFN-16 Package
These are Pb-Free Devices*
Applications
SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones
Wireless PC/Laptop Cards (PCMCIA Cards)
POS Terminals (SAM Card Interfaces)
Smart Card Readers
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
QFN16
MT SUFFIX
CASE 488AK
http://onsemi.com
MARKING
DIAGRAM
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G or
G
= Pb-Free Package
16
NCN
4557
ALYWG
1
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
ORDERING INFORMATION
1
NCN4557
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2
Figure 1. Typical Interface Application
V
DD
V
DD
1.8 V to 5.5 V
V
BAT
2.7 V to 5.5 V
0.1
m
F
0.1
m
F
3
MPU or Microcontroller
V
CC
P4
P3
P2
P1
P0
GND
12
2
13
11
9
10
8
ENABLE
SEL0
SEL1
RST
CLK
I/O
NCN4557
V
BAT
CRD_V
CC
A
CRD_RSTA
CRD_CLKA
CRD_I/OA
GND
CRD_I/OB
CRD_CLKB
CRD_RSTB
CRD_V
CC
B
1.8 V/3 V SIM/Smart Card
4
6
5
7
17
14
16
15
1
1
m
F
1
m
F
1
2
3
4
5
6
7
8
V
CC
RST
CLK
C4
GND
V
pp
I/O
C8
CARD A
C4
CLK
RST
V
CC
C8
I/O
V
pp
GND
CARD B
4
3
2
1
8
7
6
5
1.8 V/3 V SIM/Smart Card
Figure 2. QFN-16 Pinout (Top View)
SEL0
SEL1
CLK
RST
12
11
10
9
CRD_CLKA
8
7
6
5
CRD_RST
A
CRD_I/OA
I/O
CRD_V
CC
B
V
DD
V
BAT
CRD_V
CC
A
CRD_CLKB
16
15
14
13
1
2
3
4
CRD_RSTB
CRD_I/OB
ENABLE
NCN4557
17
GND
Exposed Pad (EP)
NCN4557
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3
Figure 3. NCN4557 Block Diagram
LDO B > 50 mA
CRD_V
CC
B
CRD_CLKB
CRD_RSTB
CRD_I/OB
CLK
RST
I/O
V
DD
V
BAT
CRD_V
CC
A
CRD_CLKA
CRD_RSTA
CRD_I/OA
GROUND
GND
17
LDO A > 50 mA
7
6
5
4
3
CONTROL
LOGIC
MUX
SEQUENCING
2
8
14
15
16
1
1.8 V/3.0 V/Enable
1.8 V/3.0 V/Enable
CRD_V
CC
B
CRD_V
CC
B
14 k
V
DD
18 k
9
10
CRD_V
CC
A
En
En
En
En
En
En
ENABLE
SEL0
SEL1
11
12
13
CRD_V
CC
A
14 k
DATA
DATA
DATA
DATA
I/O
I/O
I/O
I/O
NCN4557
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4
PIN DESCRIPTIONS
PIN
Name
Type
Description
1
CRD_V
CC
B
POWER
This pin is connected to the Card power supply pin (C1) (Card B).The corresponding LDO is
programmable using the pins SEL0, SEL1 and ENABLE to provide 1.8 V, 3.0 V or 0 V (disable).
CRD_V
CC
B can not be active when CRD_V
CC
A is active and conversely.
2
V
DD
POWER
This pin is connected to the controller power supply. It configures the level shifter input stage to accept
the signal coming from the microcontroller. A 0.1
m
F capacitor shall be used to bypass the power supply
voltage. When V
DD
is below 1.5 V typical CRD_V
CC
A and B are disabled; the NCN4557 comes into a
shutdown mode.
3
V
BAT
POWER
DC/DC converter power supply input shared by the LDOs A & B. This pin has to be bypassed by a
0.1
m
F capacitor.
4
CRD_V
CC
A
POWER
This pin is connected to the Card power supply pin (C1) (Card A).The corresponding LDO is
programmable using the pins SEL0, SEL1 and ENABLE to provide 1.8 V, 3.0 V or 0 V (disable).
CRD_V
CC
A can not be active when CRD_V
CC
B is active and conversely.
5
CRD_CLKA
OUTPUT
This pin is connected to the clock pin (C3) of the card connector A. The clock (CLK) signal comes from
the external clock generator (standalone clock source or microcontroller). The internal level shifter
adapts the voltage levels CLK to CRD_CLKA. An internal active pull- down NMOS device maintains this
pin to Ground during either the CRD_V
CC
A start-up sequence, or when CRD_V
CC
A = 0 V.
6
CRD_RSTA
OUTPUT
This pin is connected to the RESET pin (C2) of the card connector A. A level translator adapts the
RESET signal from the microcontroller to the external card A. The output current is internally limited to
15 mA max. Similarly to the CRD_CLK A or B pins this pin is maintained Low when CRD_V
CC
A = 0 V
and during the corresponding LDO transient phase of power-up.
7
CRD_I/OA
INPUT /
OUTPUT
This pin handles the connection to the serial I/O pin (C7) of the card connector A. A bidirectional level
translator adapts the serial I/O signal between the card and the micro-controller. A 14 k
W
(typical)
pull-up resistor provides a High Impedance state to the card I/O link; during the operating phase, a
dynamic pull-up circuit is activated making the CRD_I/OA rise time compliant with the ISO7816, EMV,
GSM and related standards. An internal active pull-down MOS device forces this pin to Ground during
either the CRD_V
CC
A start-up sequence or when CRD_V
CC
A = 0 V. The CRD_I/OA pin is internally
limited by a 15 mA max current.
8
I/O
INPUT /
OUTPUT
This pin is connected to an external microcontroller or cellular phone management unit (Baseband circuit
or PMU). A bidirectional level translator adapts the serial I/O signal between the smart card A or B and
the controller. Only one card, the selected card, communicates through the bidirectional I/O interface. A
built-in 18 k
W
typical resistor provides a high impedance state when the interface is not activated. An
additional dynamic pullup circuit accelerates the I/O rise time making the bidirectional channel perfectly
balanced in regards to the standard rise time requirements.
9
RST
INPUT
The RESET signal present at this pin is connected to the card through the internal level shifter which
translates the levels according to the CRD_V
CC
A or B programmed value.
10
CLK
INPUT
The clock signal, coming from the external controller, must have a Duty Cycle within the Min/Max values
defined by the specification (typically 50%). The built-in level shifter translates the input signal to the
external card CLK input.
11
SEL1
INPUT
SEL1 allows the selection of the Card A or B (Table 1).
SEL1 = Low
!
Card A selected
SEL1 = High
!
Card B selected
12
SEL0
INPUT
SEL0 allows programming CRD_V
CC
A or B (1.8 V or 3.0 V) (Table 1).
SEL0 = Low
!
CRD_V
CC
A/B = 1.8 V
SEL0 = High
!
CRD_V
CC
A/B = 3.0 V
13
ENABLE
INPUT
Power Up and Down pin:
ENABLE = Low
!
Low current shutdown mode activated
ENABLE = High
!
Normal Operation
A Low level on this pin switches off the card interface.
14
CRD_I/OB
INPUT /
OUTPUT
This pin handles the connection to the serial I/O pin (C7) of the card connector B. A bidirectional level
translator adapts the serial I/O signal between the card and the micro-controller. A 14 k
W
(typical)
pull-up resistor provides a High Impedance state to the card I/O link; during the operating phase a
dynamic pull-up circuit is activated making the CRD_I/OB rise time compliant with the ISO7816, EMV,
GSM and related standards. An internal active pulldown MOS device forces this pin to Ground during
either the CRD_V
CC
B start-up sequence or when CRD_V
CC
B = 0 V. The CRD_I/OB pin is internally
limited by a 15 mA maximum current.
15
CRD_RSTB
OUTPUT
This pin is connected to the RESET pin of the card connector B. A level translator adapts the RESET
signal from the microcontroller to the external card B. The output current is internally limited by a 15 mA
max current. Similarly to the CRD_CLK A or B pins this pin is maintained Low when CRD_V
CC
B = 0 V
and during the corresponding LDO transient phase of powerup.
16
CRD_CLKB
OUTPUT
This pin is connected to the clock pin (C3) of the card connector B. The clock (CLK) signal comes from
the external clock generator (standalone clock source or microcontroller). The internal level shifter
adapts the voltage levels CLK to CRD_CLKB. An internal active pull down NMOS device maintains this
pin to Ground during either the CRD_V
CC
B start-up sequence, or when CRD_V
CC
B = 0 V.
17
GND
GND
This pin number is the Exposed Pad which is the electrical Ground of the device. It must be soldered to
the PCB ground plane.
NCN4557
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5
ATTRIBUTES
Characteristics
Values
ESD protection
Human Body Model (HBM):
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17) (Note 1)
All Other Pins (Note 1)
Machine Model (MM):
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17)
All Other Pins
Charged Device Model (CDM):
Card Pins (1, 4, 5, 6, 7, 14, 15 , 16 & 17)
All Other Pins
8 kV
2 kV
600 V
200 V
2 kV
400 V
Moisture sensitivity (Note 2)
QFN-16
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V-0 @ 0.125 in
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. Human Body Model (HBM): R =1500
W
, C = 100 pF.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
LDO Power Supply Voltage
V
BAT
-0.5
V
BAT
6
V
Power Supply Microcontroller Side
V
DD
-0.5
V
DD
6
V
External Card Power Supply
CRD_V
CC
-0.5
CRD_V
CC
6
V
Digital Input Pins
V
in
I
in
-0.5
V
in
V
DD
+ 0.5
but < 6.0
5
V
mA
Digital Output Pins
V
out
I
out
-0.5
V
out
V
DD
+ 0.5
but < 6.0
10
V
mA
CRD Output Pins
CRD_I/O & CRD_RST Pins
CRD_CLK Pin
V
out
I
out
-0.5
V
out
CRD_V
CC
+ 0.5
but < 6.0
15 (Internally Limited)
70 (Internally Limited)
V
mA
QFN-16 Low Profile package
Power Dissipation @ T
A
= +85
C
Thermal Resistance Junction-to-Air
P
D
R
q
JA
450
90
mW
C/W
Operating Ambient Temperature Range
T
A
-40 to +85
C
Operating Junction Temperature Range
T
J
-40 to +125
C
Maximum Junction Temperature
T
Jmax
+125
C
Storage Temperature Range
T
stg
-65 to + 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NCN4557
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6
POWER SUPPLY SECTION
(-40
C to +85
C)
Pin
Symbol
Rating
Min
Typ
Max
Unit
3
V
BAT
Power Supply
2.7
5.5
V
3
I
VBAT
Operating current
CRD_V
CC
A = 3.0 V, CRD_V
CC
B = 0 V, I
CC
A & B = 0 mA
CRD_V
CC
A = 1.8 V, CRD_V
CC
B = 0 V, I
CC
A & B = 0 mA
CRD_V
CC
A = 0 V, CRD_V
CC
B = 3.0 V, I
CC
A & B = 0 mA
CRD_V
CC
A = 0 V, CRD_V
CC
B = 1.8 V, I
CC
A & B = 0 mA
26
25
26
25
80
80
80
80
m
A
3
I
VBAT_SD
Shutdown current ENABLE = Low
3
m
A
2
V
DD
Operating Voltage
1.8
5.5
V
2
I
VDD
Operating Current (CLK & RST Low)
0.1
2
m
A
2
I
VDD_SD
Shutdown Current ENABLE = Low
0.05
1
m
A
2
V
DD
Undervoltage Lockout
0.6
1.5
V
1,4
CRD_V
CC
A or B
3.0 V Mode, V
BAT
= 3.3 V to 5.5 V, I
CRD_VCC
= 0 mA to 50 mA
1.8 V Mode, V
BAT
= 2.7 V to 5.5 V, I
CRD_VCC
= 0 mA to 50 mA
2.75
1.65
3.0
1.8
3.25
1.95
V
1,4
I
CRD_VCC_SC
Short Circuit Current CRD_V
CC
Shorted to GND, T
A
= 25
C
50
175
mA
7,13,14
Channel Turn-on Time
I
CC
A or B = 0 mA, ENABLE rise edge to CRD_I/OA or B rise edge
0.8
2.5
ms
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are
applied individually under normal operating conditions and not valid simultaneously.
DIGITAL INPUT/OUTPUT SECTION CLK, RST, I/O, ENABLE, SEL0, SEL1
(-40
C to + 85
C)
Pin
Symbol
Rating
Min
Typ
Max
Unit
9,10
V
IH
V
IL
High Level Input Voltage (RST, CLK)
Low Level Input Voltage (RST, CLK)
0.85 * V
DD
V
DD
0.15 * V
DD
V
11,12,13
V
IH
V
IL
High Level Input Voltage (ENABLE, SEL0, SEL1)
Low Level Input Voltage (ENABLE, SEL0, SEL1)
0.85 * V
DD
V
DD
0.15 * V
DD
V
9,10,11,
12,13
I
IH
, I
IL
Input current (RST, CLK, ENABLE, SEL0, SEL1)
-1
1
m
A
8
V
OH_I/O
V
OL_I/O
High Level Output Voltage (CRD_ I/O = CRD_V
CC
, I
OH_I/O
=-20
m
A)
Low Level Output Voltage (CRD_ I/O = 0 V, I
OL_I/O
= 500
m
A)
0.75 * V
DD
V
DD
0.3
V
8
t
R
, t
F
Rise and Fall times (I/O), C
out
= 30 pF
0.8
m
s
8
R
pu_I/O
I/0 Pullup Resistor
12
18
24
k
W
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are
applied individually under normal operating conditions and not valid simultaneously.
NCN4557
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7
CARD INTERFACE SECTION (-40
C to +85
C)
Pin
Symbol
Rating
Min
Typ
Max
Unit
6,15
CRD_RSTA
CRD_RSTB
CRD_V
CC
= +3 V
Output RESET V
OH
@ ICRD_rst = -20
m
A
Output RESET V
OL
@ ICRD_rst = +200
m
A
Output RESET Rise Time @ C
out
= 30 pF
Output RESET Fall Time @ C
out
= 30 pF
CRD_V
CC
= +1.8 V
Output RESET V
OH
@ ICRD_rst = -20
m
A
Output RESET V
OL
@ ICRD_rst = +200
m
A
Output RESET Rise Time @ C
out
= 30 pF
Output RESET Fall Time @ C
out
= 30 pF
0.9 * CRD_V
CC
0
0.9 * CRD_V
CC
0
CRD_V
CC
0.3
0.8
0.8
CRD_V
CC
0.3
0.8
0.8
V
V
m
s
m
s
V
V
m
s
m
s
5,16
CRD_CLKA
CRD_CLKB
CRD_V
CC
= +3 V
Output Duty Cycle
Max Output Frequency
Output V
OH
@ ICRD_clk = -20
m
A
Output V
OL
@ ICRD_clk = +200
m
A
Output CRD_CLK Rise Time @ C
out
= 30 pF
Output CRD_CLK Fall Time @ C
out
= 30 pF
CRD_V
CC
= +1.8 V
Output Duty Cycle
Max Output Frequency
Output V
OH
@ ICRD_clk = -20
m
A
Output V
OL
@ ICRD_clk = +200
m
A
Output CRD_CLK Rise Time @ C
out
= 30 pF
Output CRD_CLK Fall Time @ C
out
= 30 pF
40
5
0.9 * CRD_V
CC
0
40
5
0.9 * CRD_V
CC
0
60
CRD_V
CC
0.3
18
18
60
CRD_V
CC
0.3
18
18
%
MHz
V
V
ns
ns
%
MHz
V
V
ns
ns
7,14
CRD_I/OA
CRD_I/OB
CRD_V
CC
= +3 V
Output V
OH
@ I
CRD_IO
= -20
m
A, V
I/O
=V
DD
Output V
OL
@ I
CRD_IO
= +1 mA, V
I/O
= 0V
CRD_I/O Rise Time @ C
out
= 30pF
CRD_I/O Fall Time @ C
out
= 30 pF
CRD_V
CC
= +1.8 V
Output V
OH
@ I
CRD_IO
= -20
m
A, V
I/O
= V
DD
Output V
OL
@ I
CRD_IO
= +1 mA, V
I/O
= 0 V
CRD_I/O Rise Time @ C
out
= 30 pF
CRD_I/O Fall Time @ C
out
= 30 pF
Short-Circuit Current, V
I/O
= 0 V
0.8 * CRD_V
CC
0
0.8 * CRD_V
CC
0
4
CRD_V
CC
0.4
0.8
0.8
CRD_V
CC
0.3
0.8
0.8
15
V
V
m
s
m
s
V
V
m
s
m
s
mA
8
R
pu_CRD_I/O
Card I/O Pullup Resistor
10
14
18
k
W
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are
applied individually under normal operating conditions and not valid simultaneously.
3. All the dynamic specifications (AC specifications) are guaranteed by design over the operating temperature range.
NCN4557
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8
TYPICAL CHARACTERISTICS
Figure 4. I
BAT
Operating Current vs. V
BAT
,
T
A
= 25
C, I
CC
= 0 mA
Figure 5. I
BAT
Shutdown Current vs. V
BAT
V
BAT
(V)
V
BAT
(V)
5.5
5.1
4.7
4.3
3.9
3.5
3.1
2.7
20
22
24
26
28
30
5.5
5.1
4.7
4.3
3.9
3.5
3.1
2.7
0
0.2
0.4
0.6
0.8
1.0
1.2
Figure 6. IV
DD
Shutdown Current vs. V
DD
,
T
A
= 25
C, V
BAT
= 5.5 V
Y AXIS LABEL (UNIT)
5.8
5.4
5.0
3.8
3.4
2.6
2.2
1.8
0
10
20
30
40
50
Figure 7. Activation Sequence, Ch1 : CRD_V
CC
,
Ch2 : CRD_IO, Ch4 : CRD_RST, Ch3 : CRD_CLK
Figure 8. Automatic Deactivation
Ch4: CRD_RST, Ch3: CRD_CLK, Ch2: CRD_IO,
Ch1: CRD_V
CC
I
BA
T
(
m
A)
Drop-out
CRD_V
CC
A/B = 3.0 V
CRD_V
CC
A/B = 1.8 V
I
BA
T
_
SD
(
m
A)
-40
C
25
C
85
C
3.0
4.2
4.6
IV
DD_
S
D
(nA)
NCN4557
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9
APPLICATION INFORMATION
The NCN4557 is a dual LDO-based DC/DC converter
and level shifter able to handle independently 2 smart card
interfaces. When one of these interfaces is operating the
other one is not active and conversely. Class B (3.0 V) and
C (1.8 V) cards can be used.
The Card and the CRD_V
CC
power supply are selected
using the pins SEL0, SEL1 and ENABLE according to
Table 1.
Table 1. CARD AND CRD_V
CC
SELECTION
ENABLE
SEL1
SEL0
Card# / CRD_V
CC
1
0
0
Card A / 1.8 V
1
0
1
Card A / 3.0 V
1
1
0
Card B / 1.8 V
1
1
1
Card B / 3.0 V
0
X
X
A & B Disabled
Card Supply Converter
The built-it NCN4557 DC/DC converters are Low
Drop-Out Voltage Regulators capable to supply a current
in excess of 50 mA under 1.8 V or 3.0 V. These voltages are
selected according to Table 1. Using the Boolean input
ENABLE pin the NCN4557 device can be disabled setting
the circuit in a shutdown mode for which the power
consumption features values typically in the range of a few
tens of nA. Figure 9 shows a simplified view of the
NCN4557 voltage regulator. The CRD_V
CC
output is
internally current limited and protected against short
circuits. The short-circuit current IV
CC
varies with V
BAT
typically in the range of 30 mA to 60 mA.
In order to guarantee a stable and satisfying operating of
the LDO the CRD_V
CC
output will be connected to a
1.0
mF bypass ceramic capacitor to the ground. At the
input, V
BAT
will be bypassed to the ground with a 0.1
mF
ceramic capacitor.
GND
I
lim
+
-
+
ENABLE
V
BAT
CRD_V
CC
R1
R2
Q1
C
in
= 0.1
m
F
Cout = 1.0
m
F
V
ref
Figure 9. Simplified Block Diagram of the LDO
Voltage Regulator
Level Shifters
The level shifters accommodate the voltage difference
that might exist between the microcontroller and the smart
card. The RESET and CLOCK level shifters are
mono-directional and feature both the same architecture.
The bidirectional I/O line provides a way to
automatically adapt the voltage difference between the
controller and the card in both directions. In addition with
the pull-up resistor, a dynamic pullup circuit (Figure 10,
Q1 and Q2) provides a fast charge of the stray capacitance,
yielding a rise time fully within the ISO7816, EMV and
GSM specifications.
NCN4557
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10
18 k
CRD_I/O
14 k
I/O
V
DD
LOGIC
IO/CONTROL
GND
GND
200 ns
200 ns
Q1
Q2
Q3
CRD_V
CC
Figure 10. Basic I/O line Interface
The typical waveform provided in Figure 11 shows how
the accelerator operates. During the first 200 ns (typical),
the slope of the rise time is solely a function of the pullup
resistor associated with the stray capacitance. During this
period, the PMOS devices are not activated since the input
voltage is below their V
gs
threshold. When the input slope
crosses the V
gsth
, the opposite one shot is activated,
providing a low impedance to charge the capacitance, thus
increasing the rise time as depicted in Figure 11. The same
mechanism applies for the opposite side of the line to make
sure the system is optimum.
Figure 11. CRD_IO Typical Rise and Fall Times
with Stray Capacitance > 30 pF
(33 pF capacitor connected on the board)
Powerup Sequence
The powerup sequence makes sure all the card-related
signals are LOW during the CRD_V
CC
positive going
slope. The Powerup sequence is activated by setting the
ENABLE Boolean signal HIGH. CRD_RST, CRD_CLK
and CRD_I/O are maintained LOW during the activation
stage until CRD_V
CC
reaches its nominal value (1.8 V or
3.0 V). Figure 7 shows the typical NCN4557 activation
sequence.
About 800
ms after CRD_V
CC
has reached its nominal
voltage value, CRD_IO and CRD_RST are released.
CRD_CLK is enabled during the rising slope of the
second clock cycle after CRD_IO and CRD_RST are
enabled.
Figure 12. NCN4557 Power-Up
CRD_RSTA/B
CRD_IOA/B
CRD_CLKA/B
CRD_V
CC
A/B
ENABLE
T
ON
~ 0.9 ms
2nd Rise Edge After
CRD_IOA/B Rising
In all cases the application software is responsible for the
smart card signal sequence (contact activation sequence,
cold reset and warm reset sequences).
Powerdown Sequence
The NCN4557 provides a powerdown sequence which is
activated by setting the ENABLE Boolean signal LOW.
The communication I/O session is terminated immediately
according to the ISO7816 and EMV specifications as
depicted in Figures 8 and 13.
ISO7816 Sequence:
CRD_RST is forced to LOW
CRD_CLK is forced to LOW 2 clock cycles after
ENABLE is set LOW unless CRD_CLK is already in
NCN4557
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11
this state or 8
ms after the ENABLE pin is set LOW in
the other cases.
CRD_I/O is forced to LOW about 8
ms after the
ENABLE pin is set LOW.
Then CRD_V
CC
Supply Shuts Off
Figure 13. NCN4557 Power Down Sequence
CRD_V
CC
A/B
CRD_IOA/B
CRD_CLKA/B
CRD_RSTA/B
ENABLE
T
OFF
~ 8.0
m
s
Input Schmitt Triggers
All the logic input pins (excepted I/O and CRD_I/O,
Figure 3) have built-in Schmitt trigger circuits to prevent
the NCN4557 against uncontrolled operation. The typical
dynamic characteristics of the related pins are depicted in
Figure 14.
OUTPUT
V
DD
ON
OFF
0.2 x V
DD
or
0.4 V
0.7 x V
DD
INPUT
Figure 14. Typical Schmitt Trigger Characteristics
Shutdown Operating
In order to save power or for other purpose required by
the application it is possible to put the NCN4557 in a
shutdown mode by setting LOW the pin ENABLE. On the
other hand the device enters automatically in a shutdown
mode when V
DD
becomes lower than 1.0 V typically.
ESD Protection
The NCN4557 CRD interface features an Human Body
Model ESD voltage protection in excess of 8 kV for all the
CRD pins (CRD_IOA & B, CRD_CLKA & B,
CRD_RSTA & B, CRD_V
CC
A & B and GND). All the
other pins (microcontroller side) sustain at least 2 kV.
These values are guaranteed for the device in its full
integrity without considering the external capacitors added
to the circuit for a proper operating. Consequently in the
operating conditions it is able to sustain much more than
8 kV on its CRD pins making it perfectly protected against
electrostatic discharge well over the Human Body Model
ESD voltages required by the ISO7816 standard (4 kV).
Printed Circuit Board Layout
Careful layout routing will be applied to achieve a good
and efficient operating of the device in its mobile or
portable environment and fully exploit its performance.
The bypass capacitors have to be connected as close as
possible to the device pins (CRD_V
CC
A and B, V
DD
or
V
BAT
) in order to reduce as much as possible parasitic
behaviors (ripple and noise). It is recommended to use
ceramic capacitors.
The exposed pad of the QFN-16 package will be
connected to the ground. A relatively large ground plane is
recommended.
ORDERING INFORMATION
Device
Package
Shipping
NCN4557MTG
QFN-16
(Pb-Free)
123 Units / Rail
NCN4557MTR2G
QFN-16
(Pb-Free)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NCN4557
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12
PACKAGE DIMENSIONS
QFN16 3*3*0.75 MM, 0.5 P
CASE 488AK-01
ISSUE O
16X
SEATING
PLANE
L
D
E
0.15 C
A
A1
e
D2
E2
b
1
4
5
8
12
9
16
13
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. L
max
CONDITION CAN NOT VIOLATE 0.2 MM
SPACING BETWEEN LEAD TIP AND FLAG.
B
A
0.15 C
TOP VIEW
SIDE VIEW
BOTTOM VIEW
PIN 1
LOCATION
0.10 C
0.08 C
(A3)
C
16 X
16X
NOTE 5
0.10 C
0.05 C
A B
NOTE 3
K
16X
EXPOSED PAD
DIM
MIN
MAX
MILLIMETERS
A
0.70
0.80
A1
0.00
0.05
A3
0.20 REF
b
0.18
0.30
D
3.00 BSC
D2
1.65
1.85
E
3.00 BSC
E2
1.65
1.85
e
0.50 BSC
K
0.20
---
L
0.30
0.50
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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Phone: 81-3-5773-3850
NCN4557/D
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