Document Outline
- Features
- Options
- General Description
- Functional Block Diagrams
- TQFP Pin Assignment Table
- Pin Assignment 100-Pin TQFP
- TQFP Pin Descriptions
- Pin Layout 165-Pin FBGA
- FBGA Pin Descriptions
- Interleaved Burst Address Table (Mode = NC or HIGH)
- Linear Burst Address Table (Mode = LOW)
- Partial Truth Table for Read/Write Commands (x18)
- Partial Truth Table for Read/Write Commands (x32/x36)
- State Diagram for ZBT SRAM
- Truth Table
- Absolute Maximum Ratings
- 3.3V I/O DC Electrical Characteristics and Operating Conditions
- 2.5V I/O DC Electrical Characteristics and Operating Conditions
- TQFP Capacitance
- FBGA Capacitance
- IDD Operating Conditions and Maximum Limits
- TQFP Thermal Resistance
- FBGA Thermal Resistance
- AC Electrical Characteristics
- 3.3V I/O AC Test Conditions
- 3.3V I/O Output Load Equivalents
- Load Derating Curves
- 2.5V I/O Output Load Equivalents
- Snooze Mode
- Snooze Mode Electrical Characteristics
- Snooze Mode Waveform
- Read/Write Timing
- NOP, Stall, and Deselect Cycles
- 100-Pin Plastic TQFP (JEDEC LQFP)
- 165-Pin FBGA
- Revision History
1
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
8Mb
ZBT
SRAM
FEATURES
High frequency and 100 percent bus utilization
Fast cycle times: 10ns, 11ns and 12ns
Single +3.3V 5% power supply (V
DD
)
Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
Advanced control logic for minimum control
signal interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs to
eliminate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Pin/function compatibility with 2Mb, 4Mb, and
18Mb ZBT SRAM
100-pin TQFP
165-pin FBGA
Automatic power-down
OPTIONS
MARKING
Timing (Access/Cycle/MHz)
7.5ns/10ns/100 MHz
-10
8.5ns/11ns/90 MHz
-11
9ns/12ns/83 MHz
-12
Configurations
3.3V I/O
512K x 18
MT55L512L18F
256K x 32
MT55L256L32F
256K x 36
MT55L256L36F
2.5V I/O
512K x 18
MT55L512V18F
256K x 32
MT55L256V32F
256K x 36
MT55L256V36F
Package
100-pin TQFP
T
165-pin FBGA
F*
Operating Temperature Range
Commercial (0C to +70C)
None
Industrial (-40C to +85C)**
IT
Part Number Example:
MT55L256L32FT-11
MT55L512L18F, MT55L512V18F,
MT55L256L32F, MT55L256V32F,
MT55L256L36F, MT55L256V36F
3.3V V
DD
, 3.3V or 2.5V I/O
NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).
100-Pin TQFP
1
* A Part Marking Guide for the FBGA devices can be found on Micron's
Web site--
http://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
165-Pin FBGA
GENERAL DESCRIPTION
The Micron
Zero Bus Turnaround
TM
(ZBT
) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron's 8Mb ZBT SRAMs integrate a 512K x 18,
256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
2
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
K
MODE
18
BWa#
BWb#
R/W#
CE#
CE2
CE2#
OE#
READ LOGIC
DQs
DQPa
DQPb
DQPc
DQPd
256K x 8 x 4
(x32)
256K x 9 x 4
(x36)
MEMORY
ARRAY
E
INPUT
REGISTER
BWc#
BWd#
ADDRESS
REGISTER
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
18
18
16
18
BURST
LOGIC
SA0'
SA1'
D1
D0
Q1
Q0
SA0
SA1
18
ADV/LD#
CE
ADV/LD#
K
CLK
CKE#
WRITE
DRIVERS
D
A
T
A
S
T
E
E
R
I
N
G
S
E
N
S
E
A
M
P
S
WRITE ADDRESS
REGISTER
SA0, SA1, SA
O
U
T
P
U
T
B
U
F
F
E
R
S
E
36
36
36
36
36
36
36
NOTE: Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions, and timing diagrams
for detailed information.
FUNCTIONAL BLOCK DIAGRAM
256K x 32/36
FUNCTIONAL BLOCK DIAGRAM
512K x 18
SA0, SA1, SA
K
MODE
19
BWa#
BWb#
R/W#
CE#
CE2
CE2#
OE#
READ LOGIC
DQs
18
18
18
18
D
A
T
A
S
T
E
E
R
I
N
G
512K x 9 x 2
MEMORY
ARRAY
E
E
ADDRESS
REGISTER
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
19
19
17
19
BURST
LOGIC
SA0'
SA1'
D1
D0
Q1
Q0
SA0
SA1
19
ADV/LD#
CE
ADV/LD#
K
S
E
N
S
E
A
M
P
S
CLK
CKE#
WRITE
DRIVERS
WRITE ADDRESS
REGISTER
INPUT
REGISTER
18
18
18
O
U
T
P
U
T
B
U
F
F
E
R
S
3
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
GENERAL DESCRIPTION (continued)
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc#, and BWd#), and
read/write (R/W#).
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal mini-
mization), clock (CLK), and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin (MODE) that selects between interleaved and linear
burst modes. MODE may be tied HIGH, LOW, or left
unconnected if burst is unused. The flow-through data-
out (Q) is enabled by OE#. WRITE cycles can be from
one to four bytes wide as controlled by the write control
inputs.
All READ, WRITE, and DESELECT cycles are initi-
ated by the ADV/LD# input. Subsequent burst ad-
dresses can be internally generated as controlled by the
burst advance pin (ADV/LD#). Use of burst mode is
optional. It is allowable to give an address for each
individual READ and WRITE cycle. BURST cycles wrap
around after the fourth access from a base address.
To allow for continuous, 100 percent use of the data
bus, the flow-through ZBT SRAM uses a LATE WRITE
cycle. For example, if a WRITE cycle begins in clock cycle
one, the address is present on rising edge one. BYTE
WRITEs need to be asserted on the same cycle as the
address. The write data associated with the address is
required one cycle later, or on the rising edge of clock
cycle two.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes to
be written. During a BYTE WRITE cycle, BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls
DQc pins; and BWd# controls DQd pins. Cycle types
can only be defined when an address is loaded, i.e.,
when ADV/LD# is LOW. Parity/ECC bits are available
only on the x18 and x36 versions.
Micron's 8Mb ZBT SRAMs operate from a +3.3V V
DD
power supply, and all inputs and outputs are LVTTL-
compatible. Users can choose either a 3.3V or 2.5V I/O
version. The device is ideally suited for systems requir-
ing high bandwidth and zero bus turnaround delays.
Please refer to the Micron Web site
(
www.micron.com/sramds
) for the latest data sheet.
4
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
PIN #
x18
x32
x36
1
NC
NF
DQPc
2
NC
DQc
DQc
3
NC
DQc
DQc
4
V
DD
Q
5
V
SS
6
NC
DQc
DQc
7
NC
DQc
DQc
8
DQb
DQc
DQc
9
DQb
DQc
DQc
10
V
SS
11
V
DD
Q
12
DQb
DQc
DQc
13
DQb
DQc
DQc
14
V
SS
1
15
V
DD
16
V
DD
2
17
V
SS
18
DQb
DQd
DQd
19
DQb
DQd
DQd
20
V
DD
Q
21
V
SS
22
DQb
DQd
DQd
23
DQb
DQd
DQd
24
DQb
DQd
DQd
25
NC
DQd
DQd
PIN #
x18
x32
x36
51
NC
NF
DQPa
52
NC
DQa
DQa
53
NC
DQa
DQa
54
V
DD
Q
55
V
SS
56
NC
DQa
DQa
57
NC
DQa
DQa
58
DQa
59
DQa
60
V
SS
61
V
DD
Q
62
DQa
63
DQa
64
ZZ
65
V
DD
66
V
SS
67
V
SS
68
DQa
DQb
DQb
69
DQa
DQb
DQb
70
V
DD
Q
71
V
SS
72
DQa
DQb
DQb
73
DQa
DQb
DQb
74
DQa
DQb
DQb
75
NC
DQb
DQb
PIN #
x18
x32
x36
76
V
S S
77
V
DD
Q
78
NC
DQb
DQb
79
NC
DQb
DQb
80
SA
NF
DQPb
81
SA
82
SA
83
SA
84
NF
3
85
ADV/LD#
86
OE# (G#)
87
CKE#
88
R/W#
89
CLK
90
V
SS
91
V
DD
92
CE2#
93
BWa#
94
BWb#
95
NC
BWc# BWc#
96
NC
BWd# BWd#
97
CE2
98
CE#
99
SA
100
SA
26
V
S S
27
V
DD
Q
28
NC
DQd
DQd
29
NC
DQd
DQd
30
NC
NF
DQPd
31
MODE (LBO#)
32
SA
33
SA
34
SA
35
SA
36
SA1
37
SA0
38
DNU
39
DNU
40
V
SS
41
V
DD
42
DNU
43
DNU
44
SA
45
SA
46
SA
47
SA
48
SA
49
SA
50
SA
PIN #
x18
x32
x36
TQFP PIN ASSIGNMENT TABLE
NOTE: 1. Pins 14 and 66 do not have to be connected directly to V
SS
if the input voltage is
V
IL
.
2. Pins 16 does not have to be connected directly to V
DD
if the input voltage is
V
IH
.
3. Pin 84 is reserved for address expansion to 18Mb device.
5
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
PIN ASSIGNMENT (TOP VIEW)
100-PIN TQFP
SA
SA
SA
NF
3
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
V
SS
1
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
1
V
DD
V
DD
2
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x18
SA
SA
SA
NF
3
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NF/
DQPb
4
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
SS
1
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NF/
DQPa
4
SA
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
(LBO#)
NF/
DQPc
4
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
1
V
DD
V
DD
2
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NF/
DQPd
4
x32/x36
NOTE: 1. Pins 14 and 66 do not have to be connected directly to V
SS
if the input voltage is
V
IL
.
2. Pins 16 does not have to be connected directly to V
DD
if the input voltage is
V
IH
.
3. Pin 84 is reserved for address expansion to 18Mb device.
4. NF for x32 version, DQPx for x36 version.
6
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TQFP PIN DESCRIPTIONS
x18
x32/x36
SYMBOL TYPE
DESCRIPTION
37
37
SA0
Input
Synchronous Address Inputs: These inputs are registered
36
36
SA1
and must meet the setup and hold times around the rising
32-35, 44-50,
32-35, 44-50,
S A
edge of CLK. Pin 84 is reserved as an address bit for the
80-83, 99,
81-83, 99,
higher-density 18Mb ZBT SRAM. SA0 and SA1 are the two
100
100
least significant bits (LSB) of the address field and set the
internal burst counter if burst is desired.
93
93
BWa#
Input
Synchronous Byte Write Enables: These active LOW
94
94
BWb#
inputs allow individual bytes to be written when a WRITE
95
BWc#
cycle is active and must meet the setup and hold times
96
BWd#
around the rising edge of CLK. BYTE WRITEs need to be
asserted on the same cycle as the address. BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls DQc
pins; BWd# controls DQd pins.
89
89
CLK
Input
Clock: This signal registers the address, data, chip enables,
byte write enables and burst control inputs on its rising
edge. All synchronous inputs must meet setup and hold
times around the clock's rising edge.
98
98
CE#
Input
Synchronous Chip Enable: This active LOW input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW).
92
92
CE2#
Input
Synchronous Chip Enable: This active LOW input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW). This
input can be used for memory depth expansion.
97
97
CE2
Input
Synchronous Chip Enable: This active HIGH input is used to
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW). This
input can be used for memory depth expansion.
86
86
OE#
Input
Output Enable: This
active LOW, asynchronous input
(G#)
enables the data I/O output drivers. G# is the JEDEC-
standard term for OE#.
85
85
ADV/LD# Input
Synchronous Address Advance/Load: When HIGH, this
input is used to advance the internal burst counter,
controlling burst access after the external address is
loaded. When ADV/LD# is HIGH, R/W# is ignored. A LOW
on ADV/LD# clocks a new address at the CLK rising edge.
87
87
CKE#
Input
Synchronous Clock Enable: This active LOW input permits
CLK to propagate throughout the device. When CKE is
HIGH, the device ignores the CLK input and effectively
internally extends the previous CLK cycle. This input must
meet setup and hold times around the rising edge of CLK.
64
64
ZZ
Input
Snooze Enable: This active HIGH, asynchronous input
causes the device to enter a low-power standby mode in
which all data in the memory array is retained. When ZZ is
active, all other inputs are ignored.
7
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TQFP PIN DESCRIPTIONS (CONTINUED)
x18
x32/x36
SYMBOL TYPE
DESCRIPTION
88
88
R/W#
Input
Read/Write: This input determines the cycle type when
ADV/LD# is LOW and is the only means for determining
READs and WRITEs. READ cycles may not be converted into
WRITEs (and vice versa) other than by loading a new
address. A LOW on this pin permits BYTE WRITE operations
and must meet the setup and hold times around the rising
edge of CLK. Full bus-width WRITEs occur if all byte write
enables are LOW.
31
31
MODE
Input
Mode: This input selects the burst sequence. A LOW on
(LBO#)
this pin selects linear burst. NC or HIGH on this pin selects
interleaved burst. Do not alter input state while device is
operating. LBO# is the JEDEC-standard term for MODE.
(a)
58, 59, 62, 63,
(a)
52, 53, 56-59,
DQa
Input/
SRAM Data I/Os: Byte " a" is associated with DQa pins; Byte
68, 69, 72-74
62, 63
Output
" b" is associated with DQb pins; Byte " c" is associated
(b)
8, 9, 12, 13,
(b)
68, 69, 72-75,
DQb
with DQc pins; Byte " d" is associated with DQd pins.
18, 19, 22-24
78, 79
Input data must meet setup and hold times around the
(c)
2, 3, 6-9,
DQc
rising edge CLK.
12, 13
(d)
18, 19, 22-25,
DQd
28, 29
n/a
51
NF/
DQPa
NF/
No Function/Data Bits: On the x32 version, these pins are
80
NF/
DQPb
I/O
No Function (NC) and can be left floating or connected to
1
NF/
DQPc
GND to minimize thermal impedance. On the x36 version,
30
NF/
DQPd
these bits are DQs.
15, 16, 41, 65, 91
15, 16, 41, 65, 91
V
DD
Supply
Power Supply:
See DC Electrical Characteristics and
Operating Conditions for range.
4, 11, 20, 27,
4, 11, 20, 27,
V
DD
Q
Supply
Isolated Output Buffer Supply:
See DC Electrical
54, 61, 70, 77
54, 61, 70, 77
Characteristics and Operating Conditions for range.
5, 10, 14, 17, 21,
5, 10, 14, 17, 21,
V
SS
Supply
Ground:
GND.
26, 40, 55, 60,
26, 40, 55, 60,
66, 67, 71, 76, 90
66, 67, 71, 76, 90
1-3, 6, 7, 25,
n/a
NC
No Connect: These pins can be left floating or connected
28-30, 51-53, 56,
to GND to minimize thermal impedance.
57, 75, 78, 79,
95, 96
38, 39, 42, 43
38, 39, 42, 43
DNU
Do Not Use: These signals may either be unconnected or
wired to GND to minimize thermal impedance.
84
84
NF
No Function: This pin is internally connected to the die and
will have the capacitance of an input pin. It is allowable to
leave this pin unconnected or driven by signals. Pin 84 is
reserved as an address pin for the 18Mb ZBT SRAM.
8
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
PIN LAYOUT (TOP VIEW)
165-PIN FBGA
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
CE#
CE2
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
NC
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
SA
SA
SA
SA
NC
DQb
DQb
DQb
DQb
V
DD
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
V
SS
DQb
DQb
DQb
DQb
DQPb
NC
MODE
(LBO#)
BWb#
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
SA
SA
NC
BWa#
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
DNU
DNU
CE2#
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
SA1
SA0
CKE#
R/W#
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
DNU
DNU
ADV/LD#
OE# (G#)
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
SA
SA
SA
NC
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
NC
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
SA
SA
SA
SA
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
NC
SA
SA
SA
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
NC
NC
NC
NC
SA
TOP VIEW
3
4
5
6
7
8
9
10
11
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
CE#
CE2
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
NC
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
SA
SA
SA
SA
NC
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
NC
NC
NC
NC
NC
NF/
DQPc
DQc
DQc
DQc
DQc
V
SS
DQd
DQd
DQd
DQd
NF/
DQPd
NC
MODE
(LBO#)
BWc#
BWd#
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
SA
SA
BWb#
BWa#
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
DNU
DNU
CE2#
CLK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
SA1
SA0
CKE#
R/W#
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
DNU
DNU
ADV/LD#
OE# (G#)
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
SA
SA
SA
NC
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
NC
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
SA
SA
SA
SA
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
SA
SA
NC
NC
NF/
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
NF/
DQPa
NC
SA
TOP VIEW
3
4
5
6
7
8
9
10
11
1
x18
x32/x36
*No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version.
NOTE: Pin 9B is reserved for address expansion to 18Mb.
9
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
6R
6R
SA0
Input
Synchronous Address Inputs: These inputs are registered and must
6P
6P
SA1
meet the setup and hold times around the rising edge of CLK.
2A, 9A, 2B,
2A, 9A, 2B,
S A
3P, 3R, 4P, 4R, 3P, 3R, 4P, 4R,
8P, 8R, 9P, 9R,
8P, 8R, 9P,
10A, 10B, 10P, 9R, 10A, 10B,
10R, 11A, 11R 10P, 10R, 11R
5B
5B
BWa#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
4A
5A
BWb#
individual bytes to be written and must meet the setup and hold
4A
BWc#
times around the rising edge of CLK. A byte write enable is LOW
4B
BWd#
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa's and DQPa; BWb# controls DQb's and DQPb.
For the x32 and x36 versions, BWa# controls DQa's and DQPa; BWb#
controls DQb's and DQPb; BWc# controls DQc's and DQPc; BWd#
controls DQd's and DQPd. Parity is only available on the x18 and x36
versions.
7A
7A
CKE#
Input
Synchronous Clock Enable: This active LOW input permits CLK to
propogate throughout the device. When CKE# is HIGH, the device
ignores the CLK input and effectively internally extends the
previous CLK cycle. This input must meet the setup and hold times
around the rising edge of CLK.
7B
7B
R/W#
Input
Read/Write: This input determines the cycle type when ADV/LD# is
LOW and is the only means for determining READs and WRITEs.
READ cycles may not be converted into WRITEs (and vice versa)
other than by loading a new address. A LOW on this pin permits
BYTE WRITE operations to meet the setup and hold times around
the rising edge of CLK. Full bus-width WRITEs occur if all byte write
enables are LOW.
6B
6B
CLK
Input
Clock: This signal registers the address, data, chip enable, byte write
enables, and burst control inputs on its rising edge. All synchronous
inputs must meet setup and hold times around the clock's rising
edge.
3A
3A
CE#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device. CE# is sampled only when a new external address is
loaded. (ADV/LD# is LOW)
6A
6A
CE2#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
11H
11H
ZZ
Input
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
3B
3B
CE2
Input
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
8B
8B
OE#(G#)
Input
Output Enable: This
active LOW, asynchronous input enables the
data I/O output drivers.
(continued on next page)
10
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
8 A
8 A
ADV/LD#
Input Synchronous Address Advance/Load: When HIGH, this input is
used to advance the internal burst counter, controlling burst
access after the external address is loaded. When ADV/LD# is
HIGH, R/W# is ingored. A LOW on ADV/LD# clocks a new
address at the CLK rising edge.
1R
1R
MODE
Input
Mode: This input selects the burst sequence. A LOW on this
(LB0#)
input selects " linear burst." NC or HIGH on this input selects
" interleaved burst." Do not alter input state while device is
operating.
(a)
10J, 10K,
(a)
10J, 10K,
DQa
Input/ SRAM Data I/Os: For the x18 version, Byte " a" is associated DQas;
10L, 10M, 11D, 10L, 10M, 11J,
Output Byte " b" is associated with DQbs. For the x32 and x36 versions,
11E, 11F, 11G 11K, 11L, 11M
Byte " a" is associated with DQas; Byte " b" is associated with DQbs;
(b)
1J, 1K,
(b)
10D, 10E,
DQb
Byte " c" is associated with DQcs; Byte " d" is associated with DQds.
1L, 1M, 2D,
10F, 10G, 11D,
Input data must meet setup and hold times around the rising edge
2E, 2F, 2G
11E, 11F, 11G
of CLK.
(c)
1D, 1E,
DQc
1F, 1G, 2D,
2E, 2F, 2G
(d)
1J, 1K, 1L,
DQd
1M, 2J, 2K,
2L, 2M
11C
11N
NF/
DQPa
NF /
No Function/Parity Data I/Os: On the x32 version, these are No
1 N
11C
NF/
DQPb
I/O
Function (NF). On the x18 version, Byte " a" parity is DQPa; Byte
1 C
NF/
DQPc
" b" parity is DQPb. On the x36 version, Byte " a" parity is DQPa;
1 N
NF/
DQPd
Byte " b" parity is DQPb; Byte " c" parity is DQPc; Byte " d" parity is
DQPd.
2H, 4D, 4E, 4F, 2H, 4D, 4E, 4F,
V
DD
Supply Power Supply:
See DC Electrical Characteristics and Operating
4G, 4H, 4J,
4G, 4H, 4J,
Conditions for range.
4K, 4L, 4M,
4K, 4L, 4M,
8D, 8E, 8F,
8D, 8E, 8F,
8G, 8H, 8J,
8G, 8H, 8J,
8K, 8L, 8M
8K, 8L, 8M
3C, 3D, 3E,
3C, 3D, 3E,
V
DD
Q
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and
3F, 3G, 3J,
3F, 3G, 3J,
Operating Conditions for range.
3K, 3L, 3M,
3K, 3L, 3M,
3N, 9C, 9D,
3N, 9C, 9D,
9E, 9F, 9G,
9E, 9F, 9G,
9J, 9K, 9L,
9J, 9K, 9L,
9M, 9N
9M, 9N
(continued on next page)
11
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
1H, 4C, 4N,
1H, 4C, 4N,
V
SS
Supply Ground:
GND.
5C, 5D, 5E, 5F, 5C, 5D, 5E, 5F,
5G, 5H, 5J,
5G, 5H, 5J,
5K, 5L, 5M,
5K, 5L, 5M,
6C, 6D, 6E, 6F, 6C, 6D, 6E, 6F,
6G, 6H, 6J,
6G, 6H, 6J,
6K, 6L, 6M,
6K, 6L, 6M,
7C, 7D, 7E,
7C, 7D, 7E,
7F, 7G, 7H,
7F, 7G, 7H,
7J, 7K, 7L,
7J, 7K, 7L,
7M, 7N, 8C, 8N 7M, 7N, 8C, 8N
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R
DNU
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
1A, 1B, 1C,
1A, 1B, 1P,
NC
No Connect: These signals are not internally connected and may
1D, 1E, 1F,
2C, 2N, 2P,
be connected to ground to improve package heat dissipation.
1G, 1P, 2C,
2R, 3H, 5N,
Pin 9B is reserved for 16MB address expansion.
2J, 2K, 2L,
6N, 9B, 9H,
2M, 2N, 2P,
10C, 10H,
2R, 3H, 4B,
10N, 11A,
9B, 5A, 5N,
11B, 11P
6N, 9H, 10C,
10D, 10E,
10F, 10G,
10H, 10N,
11B, 11J,
11K, 11L,
11M, 11N,
11P
NF
--
No Function: These pins are internally connected to the die and
have the capacitance of an input pin. It is allowable to leave
these pins unconnected or driven by signals.
12
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FUNCTION
R/W#
BWa#
BWb#
BWc#
BWd#
READ
H
X
X
X
X
WRITE Byte " a"
L
L
H
H
H
WRITE Byte " b"
L
H
L
H
H
WRITE Byte " c"
L
H
H
L
H
WRITE Byte " d"
L
H
H
H
L
WRITE All Bytes
L
L
L
L
L
WRITE ABORT/NOP
L
H
H
H
H
FUNCTION
R/W#
BWa#
BWb#
READ
H
X
X
WRITE Byte " a"
L
L
H
WRITE Byte " b"
L
H
L
WRITE All Bytes
L
L
L
WRITE ABORT/NOP
L
H
H
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
FIRST ADDRESS (EXTERNAL)
SECOND ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X01
X...X00
X...X11
X...X10
X...X10
X...X11
X...X00
X...X01
X...X11
X...X10
X...X01
X...X00
LINEAR BURST ADDRESS TABLE (MODE = LOW)
FIRST ADDRESS (EXTERNAL)
SECOND ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X01
X...X10
X...X11
X...X00
X...X10
X...X11
X...X00
X...X01
X...X11
X...X00
X...X01
X...X10
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x18)
NOTE: Using R/W# and byte write(s), any one or more bytes may be
written.
NOTE: Using R/W# and byte write(s), any one or more bytes may be written.
PARTIAL TRUTH TABLE FOR READ/WRITE COMMANDS (x32/x36)
13
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
STATE DIAGRAM FOR ZBT SRAM
DESELECT
BEGIN
READ
BURST
READ
BEGIN
WRITE
DS
DS
DS
BURST
WRITE
READ
DS
WRITE
WRITE
BURST
READ
WRITE
READ
BURST
BURST
READ
BURST
DS
WRITE
KEY:
COMMAND
DS
READ
WRITE
BURST
OPERATION
DESELECT
New READ
New WRITE
BURST READ,
BURST WRITE, or
CONTINUE DESELECT
BURST
READ
WRITE
NOTE: 1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
clock (CLK) input and does not change the state of the device.
2. States change on the rising edge of the clock (CLK).
14
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TRUTH TABLE
(Notes 5-10)
ADDRESS
ADV/
OPERATION
USED
CE# CE2# CE2 ZZ
LD#
R/W# BWx OE# CKE#
CLK
DQ
NOTES
DESELECT Cycle
None
H
X
X
L
L
X
X
X
L
L-H
High-Z
DESELECT Cycle
None
X
H
X
L
L
X
X
X
L
L-H
High-Z
DESELECT Cycle
None
X
X
L
L
L
X
X
X
L
L-H
High-Z
CONTINUE DESELECT Cycle
None
X
X
X
L
H
X
X
X
L
L-H
High-Z
1
READ Cycle
External
L
L
H
L
L
H
X
L
L
L-H
Q
(Begin Burst)
READ Cycle
Next
X
X
X
L
H
X
X
L
L
L-H
Q
1, 11
(Continue Burst)
NOP/DUMMY READ
External
L
L
H
L
L
H
X
H
L
L-H
High-Z
2
(Begin Burst)
DUMMY READ
Next
X
X
X
L
H
X
X
H
L
L-H
High-Z
1, 2,
(Continue Burst)
11
WRITE Cycle
External
L
L
H
L
L
L
L
X
L
L-H
D
3
(Begin Burst)
WRITE Cycle
Next
X
X
X
L
H
X
L
X
L
L-H
D
1, 3,
(Continue Burst)
11
NOP/WRITE ABORT
None
L
L
H
L
L
L
H
X
L
L-H
High-Z
2, 3
(Begin Burst)
WRITE ABORT
Next
X
X
X
L
H
X
H
X
L
L-H
High-Z
1, 2,
(Continue Burst)
3, 11
IGNORE CLOCK EDGE
Current
X
X
X
L
X
X
X
X
H
L-H
4
(Stall)
SNOOZE MODE
None
X
X
X
H
X
X
X
X
X
X
High-Z
NOTE: 1. CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or
WRITE) is chosen in the initial BEGIN BURST cycle. A CONTINUE DESELECT cycle can only be entered if a DESELECT cycle
is executed first.
2. DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation.
A WRITE ABORT means a WRITE command is given, but no operation is performed.
3. OE# may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn off
the output drivers during a WRITE cycle. OE# may be used when the bus turn-on and turn-off times do not meet an
application's requirements.
4. If an IGNORE CLOCK EDGE command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it
occurs during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the IGNORE
CLOCK EDGE cycle.
5. X means " Don't Care." H means logic HIGH. L means logic LOW. BWx = H means all byte write signals (BWa#, BWb#,
BWc# and BWd#) are HIGH. BWx = L means one or more byte write signals are LOW.
6. BWa# enables WRITEs to Byte " a" (DQa pins); BWb# enables WRITEs to Byte " b" (DQb pins); BWc# enables WRITEs to
Byte " c" (DQc pins); BWd# enables WRITEs to Byte " d" (DQd pins).
7. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
8. Wait states are inserted by setting CKE# HIGH.
9. This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.
10. The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST cycle.
11. The address counter is incremented for all CONTINUE BURST cycles.
15
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
.................................. -0.5V to +4.6V
Voltage on V
DD
Q Supply
Relative to V
SS
..................................... -0.5V to V
DD
V
IN
............................................... -0.5V to V
DD
Q + 0.5V
Storage Temperature (TQFP) ............ -55C to +150C
Storage Temperature (FBGA) ........... -55C to +125C
Junction Temperature** ................................... +150C
Short Circuit Output Current .......................... 100mA
*Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
See Micron Technical Note TN-05-14 for more
information.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0 C
T
A
+70 C; V
DD
, V
DD
Q = +3.3V 0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
V
IH
2.0
V
DD
+ 0.3
V
1, 2
Input High (Logic 1) Voltage
DQ pins
V
IH
2.0
V
DD
+ 0.3
V
1, 2
Input Low (Logic 0) Voltage
V
IL
-0.3
0.8
V
1, 2
Input Leakage Current
0V
V
IN
V
DD
IL
I
-1.0
1.0
A
3
Output Leakage Current
Output(s) disabled,
IL
O
-1.0
1.0
A
0V
V
IN
V
DD
Output High Voltage
I
OH
= -4.0mA
V
OH
2.4
V
1, 4
Output Low Voltage
I
OL
= 8.0mA
V
OL
0.4
V
1, 4
Supply Voltage
V
DD
3.135
3.465
V
1
Isolated Output Buffer Supply
V
DD
Q
3.135
V
DD
V
1, 5
NOTE: 1. All voltages referenced to V
SS
(GND).
2. Overshoot:
V
IH
+4.6V for t
t
KHKH/2 for I
20mA
Undershoot:
V
IL
-0.7V for t
t
KHKH/2 for I
20mA
Power-up:
V
IH
+3.465V and V
DD
+3.135V for t
200ms
3. MODE pin has an internal pull-up, and input leakage = 10A.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be externally wired together to the same power supply.
16
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0 C
T
A
+70 C; V
DD
= +3.3V 0.165V; V
DD
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
V
IH
Q
1.7
V
DD
Q + 0.3
V
1, 2
Inputs
V
IH
1.7
V
DD
+ 0.3
V
1, 2
Input Low (Logic 0) Voltage
V
IL
-0.3
0.7
V
1, 2
Input Leakage Current
0V
V
IN
V
DD
IL
I
-1.0
1.0
A
3
Output Leakage Current
Output(s) disabled,
IL
O
-1.0
1.0
A
0V
V
IN
V
DD
Q (DQx)
Output High Voltage
I
OH
= -2.0mA
V
OH
1.7
V
1
I
OH
= -1.0mA
V
OH
2.0
V
1
Output Low Voltage
I
OL
= 2.0mA
V
OL
0.7
V
1
I
OL
= 1.0mA
V
OL
0.4
V
1
Supply Voltage
V
DD
3.135
3.465
V
1
Isolated Output Buffer Supply
V
DD
Q
2.375
2.9
V
1
NOTE: 1. All voltages referenced to V
SS
(GND).
2. Overshoot:
V
IH
+4.6V for t
t
KHKH/2 for I
20mA
Undershoot:
V
IL
-0.7V for t
t
KHKH/2 for I
20mA
Power-up:
V
IH
+3.465V and V
DD
+3.135V for t
200ms
3. MODE pin has an internal pull-up, and input leakage = 10A.
4. This parameter is sampled.
TQFP CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Control Input Capacitance
T
A
= +25 C; f = 1 MHz
C
I
3
4
p F
1
Input/Output Capacitance (DQ)
V
DD
= 3.3V
C
O
4
5
p F
1
Address Capacitance
C
A
3
3.5
p F
1
Clock Capacitance
C
CK
3
3.5
p F
1
FBGA CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Address/Control Input Capacitance
C
I
2.5
3.5
p F
4
Output Capacitance (Q)
T
A
= 25 C; f = 1 MHz
C
O
4
5
p F
4
Clock Capacitance
C
CK
2.5
3.5
p F
4
17
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1) (0 C
T
A
+70 C; V
DD
= +3.3V 0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
TYP
-10
-11
-12
UNITS NOTES
Power Supply
Device selected; All inputs
V
IL
Current: Operating
or
V
IH
; Cycle time
t
KC (MIN);
I
DD
165
300
275
250
mA
2, 3, 4
V
DD
= MAX; Outputs open
Power Supply
Device selected; V
DD
= MAX;
Current: Idle
CKE#
V
IH
;
I
DD
1
10
28
22
20
mA
2, 3, 4
All inputs
V
SS
+ 0.2 or
V
DD
- 0.2;
Cycle time
t
KC (MIN)
CMOS Standby
Device deselected; V
DD
= MAX;
All inputs
V
SS
+ 0.2 or
V
DD
- 0.2;
I
SB
2
0.5
10
10
10
mA
3, 4
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; V
DD
= MAX;
All inputs
V
IL
or
V
IH
;
I
SB
3
6
25
25
25
mA
3, 4
All inputs static; CLK frequency = 0
Clock Running
Device deselected; V
DD
= MAX;
ADV/LD#
V
IH
; All inputs
V
SS
+ 0.2
I
SB
4
37
65
65
60
mA
3, 4
or
V
DD
- 0.2; Cycle time
t
KC (MIN)
Snooze Mode
ZZ
V
IH
I
SB
2Z
0.5
10
10
10
mA
4
MAX
NOTE: 1. V
DD
Q = +3.3V 0.165V for 3.3V I/O configuration; V
DD
Q = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
3. " Device deselected" means device is in a deselected cycle as defined in the truth table. " Device selected" means device
is active (not in deselected mode).
4. Typical values are measured at +3.3V, +25 C and 12ns cycle time.
5. This parameter is sampled.
TQFP THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Thermal Resistance
Test conditions follow standard test methods
JA
40
C/W
5
(Junction to Ambient)
and procedures for measuring thermal
Thermal Resistance
impedance, per EIA/JESD51.
JC
8
C/W
5
(Junction to Top of Case)
18
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
NOTE: 1. This parameter is sampled.
2. OE# can be considered a " Don't Care" during WRITEs; however, controlling OE# can help fine-tune a system for
turnaround timing.
3. Test conditions as specified with output loading as shown in Figure 1 for 3.3V I/O (V
DD
Q = +3.3V 0.165V) and
Figure 3 for 2.5V I/O (V
DD
Q = +2.5V +0.4V/-0.125V).
4. A WRITE cycle is defined by R/W# LOW having been registered into the device at ADV/LD# LOW. A READ cycle is
defined by R/W# HIGH with ADV/LD# LOW. Both cases must meet setup and hold times.
5. Measured as HIGH above V
IH
and LOW below V
IL
.
6. Refer to Technical Note TN-55-01, " Designing with ZBT SRAMs," for a more thorough discussion on these parameters.
7. This parameter is sampled.
8. This parameter is measured with output loading as shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O.
9. Transition is measured 200mV from steady state voltage.
10. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK
when they are being registered into the device. All other synchronous inputs must meet the setup and hold times with
stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising
edge of CLK when ADV/LD# is LOW to remain enabled.
11. Preliminary package data.
AC ELECTRICAL CHARACTERISTICS
(Notes 2, 3, 4) (0 C
T
A
+70 C; V
DD
= +3.3V 0.165V unless otherwise noted)
-10
-11
-12
DESCRIPTION
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Clock
Clock cycle time
t
KHKH
10
11
12
ns
Clock frequency
f
KF
100
90
83
MHz
Clock HIGH time
t
KHKL
2.5
3.0
3.0
ns
5
Clock LOW time
t
KLKH
2.5
3.0
3.0
ns
5
Output Times
Clock to output valid
t
KHQV
7.5
8.5
9.0
ns
Clock to output invalid
t
KHQX
3.0
3.0
3.0
ns
6
Clock to output in Low-Z
t
KHQX1
3.0
3.0
3.0
ns
6, 7, 8, 9
Clock to output in High-Z
t
KHQZ
5.0
5.0
5.0
ns
6, 7, 8, 9
OE# to output valid
t
GLQV
5.0
5.0
5.0
ns
2
OE# to output in Low-Z
t
GLQX
0
0
0
ns
6, 7, 8, 9
OE# to output in High-Z
t
GHQZ
5.0
5.0
5.0
ns
6, 7, 8, 9
Setup Times
Address
t
AVKH
2.0
2.2
2.5
ns
10
Clock enable (CKE#)
t
EVKH
2.0
2.2
2.5
ns
10
Control signals
t
CVKH
2.0
2.2
2.5
ns
10
Data-in
t
DVKH
2.0
2.2
2.5
ns
10
Hold Times
Address
t
KHAX
0.5
0.5
0.5
ns
10
Clock enable (CKE#)
t
KHEX
0.5
0.5
0.5
ns
10
Control signals
t
KHCX
0.5
0.5
0.5
ns
10
Data-in
t
KHDX
0.5
0.5
0.5
ns
10
FBGA THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Junction to Ambient
Test conditions follow standard test methods
JA
40
C/W
1, 11
(Airflow of 1m/s)
and procedures for measuring thermal
Junction to Case (Top)
impedance, per EIA/JESD51.
JC
9
C/W
1, 11
Junction to Pins (Bottom)
JB
17
C/W
1, 11
19
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
Q
50
V = 1.5V
Z = 50
O
T
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
3.3V I/O AC TEST CONDITIONS
Input pulse levels ................................... V
SS
to 3.3V
Input rise and fall times ..................................... 1ns
Input timing reference levels .......................... 1.5V
Output reference levels ................................... 1.5V
Output load ............................. See Figures 1 and 2
LOAD DERATING CURVES
The Micron 512K x 18, 256K x 32, and 256K x 36
ZBT SRAM timing is dependent upon the capacitive
loading on the outputs.
Consult the factory for copies of I/O current
versus voltage curves.
Q
50
V = 1.25V
Z = 50
O
T
Figure 3
Q
225
225
5pF
+2.5V
Figure 4
2.5V I/O AC TEST CONDITIONS
Input pulse levels ................................... V
SS
to 2.5V
Input rise and fall times ..................................... 1ns
Input timing reference levels ........................ 1.25V
Output reference levels ................................. 1.25V
Output load ............................. See Figures 3 and 4
3.3V I/O Output Load Equivalents
2.5V I/O Output Load Equivalents
20
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, "power-down"
mode in which the device is deselected and current is
reduced to I
SB
2Z
. The duration of SNOOZE MODE is
dictated by the length of time the ZZ pin is in a HIGH
state. After the device enters SNOOZE MODE, all
inputs except ZZ become disabled and all outputs go to
High-Z.
The ZZ pin is an asynchronous, active HIGH input
that causes the device to enter SNOOZE MODE. When
the ZZ pin becomes a logic HIGH, I
SB
2Z
is guaranteed
after the time
t
ZZI is met. Any READ or WRITE opera-
tion pending when the device enters SNOOZE MODE is
not guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed. Similarly, when exiting
SNOOZE MODE during
t
RZZ, only a DESELECT or
READ cycle should be given.
SNOOZE MODE ELECTRICAL CHARACTERISTICS
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Current during SNOOZE MODE
ZZ
V
IH
I
SB
2Z
10
mA
ZZ active to input ignored
t
ZZ
0
t
KHKH
ns
1
ZZ inactive to input sampled
t
RZZ
0
t
KHKH
ns
1
ZZ active to snooze current
t
ZZI
t
KHKH
ns
1
ZZ inactive to exit snooze current
t
RZZI
0
ns
1
SNOOZE MODE WAVEFORM
t
ZZ
I
SUPPLY
CLK
ZZ
t
RZZ
ALL INPUTS
(except ZZ)
DON'T CARE
I
ISB2Z
t
ZZI
t
RZZI
Outputs (Q)
High-Z
DESELECT
or READ Only
NOTE: 1. This parameter is sampled.
21
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
READ/WRITE TIMING
WRITE
D(A1)
1
2
3
4
5
6
7
8
9
CLK
tKHKH
tKLKH
tKHKL
10
CE#
tKHCX
tCVKH
R/W#
CKE#
tKHEX
tEVKH
BWx#
ADV/LD#
tKHAX
tAVKH
ADDRESS
A1
A2
A3
A4
A5
A6
A7
tKHDX
tDVKH
DQ
COMMAND
tKHQX1
D(A1)
D(A2)
Q(A4)
Q(A3)
D(A2+1)
tKHQX
tKHQZ
tKHQV
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
OE#
tGLQV
tGLQX
tGHQZ
DON'T CARE
UNDEFINED
D(A5)
tKHQX
Q(A4+1)
D(A7)
Q(A6)
NOTE: 1. For this waveform, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
-10
-11
-12
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
t
GHQZ
5.0
5.0
5.0
ns
t
AVKH
2.0
2.2
2.5
ns
t
EVKH
2.0
2.2
2.5
ns
t
CVKH
2.0
2.2
2.5
ns
t
DVKH
2.0
2.2
2.5
ns
t
KHAX
0.5
0.5
0.5
ns
t
KHEX
0.5
0.5
0.5
ns
t
KHCX
0.5
0.5
0.5
ns
t
KHDX
0.5
0.5
0.5
ns
READ/WRITE TIMING PARAMETERS
-10
-11
-12
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
t
KHKH
10
11
12
ns
f
KF
100
90
83
MHz
t
KHKL
2.5
3.0
3.0
ns
t
KLKH
2.5
3.0
3.0
ns
t
KHQV
7.5
8.5
9.0
ns
t
KHQX
3.0
3.0
3.0
ns
t
KHQX1
3.0
3.0
3.0
ns
t
KHQZ
5.0
5.0
5.0
ns
t
GLQV
5.0
5.0
5.0
ns
t
GLQX
0
0
0
ns
22
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
NOP, STALL, AND DESELECT CYCLES
READ
Q(A3)
4
5
6
7
8
9
10
A3
A4
A5
D(A4)
1
2
3
CLK
CE#
R/W#
CKE#
BWx#
ADV/LD#
ADDRESS
DQ
COMMAND
WRITE
D(A4)
STALL
WRITE
D(A1)
READ
Q(A2)
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
DON'T CARE
UNDEFINED
tKHQZ
A1
A2
Q(A2)
D(A1)
Q(A3)
tKHQX
Q(A5)
NOTE: 1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates CKE# being used to create a " pause." A WRITE is not
performed during this cycle.
2. For this waveform, ZZ and OE# are tied LOW.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
NOP, STALL, AND DESELECT TIMING PARAMETERS
-10
-11
-12
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
t
KHQX
3.0
3.0
3.0
ns
t
KHQZ
5.0
5.0
5.0
ns
23
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
100-PIN PLASTIC TQFP (JEDEC LQFP)
14.00 0.10
20.10 0.10
0.62
22.10
+0.10
-0.15
16.00
+0.20
-0.05
PIN #1 ID
0.65
1.50 0.10
0.25
0.60 0.15
1.40 0.05
0.32
+0.06
-0.10
0.15
+0.03
-0.02
0.10
+0.10
-0.05
DETAIL A
DETAIL A
1.00 (TYP)
GAGE PLANE
0.10
NOTE:
1. All dimensions in millimeters.
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
24
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
165-PIN FBGA
NOTE: 1. All dimensions in millimeters MAX or typical where noted.
MIN
10.00
14.00
15.00 0.10
1.00
TYP
1.00
TYP
5.00 0.05
13.00 0.10
PIN A1 ID
PIN A1 ID
BALL A1
MOLD COMPOUND: EPOXY NOVOLAC
SUBSTRATE: PLASTIC LAMINATE
6.50 0.05
7.00 0.05
7.50 0.05
1.20 MAX
SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb
SOLDER BALL PAD: .33mm
SOLDER BALL DIAMETER REFERS
TO POST REFLOW CONDITION. THE
PRE-REFLOW DIAMETER IS 0.40
SEATING PLANE
0.85 0.075
0.12 C
C
165X 0.45
BALL A11
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc.
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc.,
and the architecture is supported by Micron Technology, Inc., and Motorola Inc.
25
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
REVISION HISTORY
Removed "Preliminary Package Data" from front page ....................................................................... February 22/02
Removed 119-pin PBGA package and references ................................................................................. February 14/02
Removed note "Not Recommended for New Designs," Rev. 6/01 ................................................................ June 7/01
Added industrial temperature references and notes, Rev. 3/01 ................................................................ March 19/01
Changed 16Mb references to 18Mb
Changed NC/DQPx to NF/DQPx
Added 119-pin PBGA package, Rev. 1/01, FINAL ................................................................................. January 10/01
Removed FBGA Part Marking Guide, Rev. 8/00, FINAL ........................................................................... August 1/00
Added FBGA Part Marking Guide, Rev 7/00 .................................................................................................... 7/21/00
Added Revision History
Removed 119-Pin PBGA packages and references
Added 165-pin FBGA Package ........................................................................................................................... 6/13/00
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