2001. 10. 29
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SEMICONDUCTOR
TECHNICAL DATA
KTK5162S
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
EATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.5 1.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATINGS (Ta=25 )
DIM
MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
KF
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
= 16V, V
DS
=0V
-
-
1
A
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=100 A, V
GS
=0V
60
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=60V, V
GS
=0V
-
-
1
A
Gate Threshold Voltage
V
th
V
DS
=3V, I
D
=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Y
fs
|
V
DS
=10V, I
D
=50mA
85
120
-
mS
Drain-Source ON Resistance
R
DS(ON)
I
D
=10mA, V
GS
=2.5V
-
22
40
Input Capacitance
C
iss
V
DS
=10V, V
GS
=0V, f=1MHz
-
6.2
-
pF
Reverse Transfer Capacitance
C
rss
V
DS
=10V, V
GS
=0V, f=1MHz
-
1.5
-
pF
Output Capacitance
C
oss
V
DS
=10V, V
GS
=0V, f=1MHz
-
4.4
-
pF
Switching Time
Turn-on Time
t
on
V
DD
=25V, I
D
=50mA, V
GS
=0 2.5V
-
10
-
nS
Turn-off Time
t
off
-
105
-
nS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
100
mA
Drain Power Dissipation
P
D
200
mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55 150
2001. 10. 29
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KTK5162S
Revision No : 0
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (A)
D
0
DS
0
I - V
D
DS
DRAIN CURRENT I (A)
FORWARD TRANSFER ADMITTANCE
0.01
0.03
D
Y - I
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (A)
D
GS
(LOW VOLTAGE REGION)
0.2
COMMON SOURCE
Ta=25 C
V =2.0V
GS
0.02
0
0
1
V =10V
SD
COMMON SOURCE
fs
D
fs
Y (S)
0.03
0.05
0.1
0.3
0.05
0.1
0.3
0.5
1
COMMON SOURCE
V =3V
DS
0.4
0.6
0.8
1.0
0.02
0.04
0.06
0.08
0.10
2.5V
3.0V
4.0
V
6.0V
10V
8.0V
2
3
4
5
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
I - V
GS
D
FORWARD CURRENT I (A)
DIODE FORWARD VOTAGE V (V)
SD
F
I - V
F
SD
DRAIN SOURCE ON-STATE RESISTANCE
R (
)
DRAIN CURRENT I (mA)
D
DS(ON)
R - I
DS(ON)
D
Ta=-25 C
CAPACITANCE C (pF)
0.5
DRAIN-SOURCE VOLTAGE V (V)
DS
C - V
DS
1
3
5
10
30
V =0
f=1MHz
Ta=25 C
GS
5
0
10
15
20
25
30
35
40
45
50
COMMON SOURCE
C
iss
C
oss
rss
C
Ta=-
25
C
Ta=
25 C
Ta
=75 C
Ta=25
C
Ta=75
C
5
10
30
50
V =2.5V
Ta=25 C
GS
COMMON SOURCE
0.01
0.03
0.05
0.1
0.3
V =0
Ta=75
C
GS
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
COMMON SOURCE
Ta=
25
C
Ta=
-2
5
C
30
1
0.3 0.5
3
5
10
2001. 10. 29
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KTK5162S
Revision No : 0
SWITCHING TIME t (ns)
D
t - I
off
D.U. 1%
PW=10
s
10V
50
IN
V
=
<
SWITCHING TIME TEST CIRCUIT
t
V =25V
DD
0.01
0.03
0.1
0.05
V =10V
GS
f
t
r
t
on
t
DRAIN CURRENT I (A)
D
V =25V
DD
I =500mA
D
R =500
L
V
OUT
KTK5162S
D
G
S
P.G
0V
IN
V
P - Ta
D
AMBIENT TEMPERATURE Ta ( C)
0
20
40
50
D
0
DRAIN POWER DISSIPATION P (mW)
60
80
100
120 140
160
100
150
200
250
300
350
5
10
30
50
100
300
500
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