2002. 6. 21
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SEMICONDUCTOR
TECHNICAL DATA
KTK5132S
Revision No : 1
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.51.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25)
DIM
MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
Type Name
Marking
Lot No.
KB
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
=16V, V
DS
=0V
-
-
1
A
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=100A, V
GS
=0V
30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=30V, V
GS
=0V
-
-
1
A
Gate Threshold Voltage
V
th
V
DS
=3V, I
D
=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Y
fs
|
V
DS
=3V, I
D
=10mA
25
-
-
mS
Drain-Source ON Resistance
R
DS(ON)
I
D
=10mA, V
GS
=2.5V
-
4
7
Input Capacitance
C
iss
V
DS
=3V, V
GS
=0V, f=1MHz
-
8.5
-
pF
Reverse Transfer Capacitance
C
rss
V
DS
=3V, V
GS
=0V, f=1MHz
-
3.3
-
pF
Output Capacitance
C
oss
V
DS
=3V, V
GS
=0V, f=1MHz
-
9.3
-
pF
Switching Time
Turn-on Time
t
on
V
DD
=5V, I
D
=10mA, V
GS
=05V
-
50
-
nS
Turn-off Time
t
off
-
180
-
nS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
100
mA
Drain Power Dissipation
P
D
200
mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55150
2002. 6. 21
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KTK5132S
Revision No : 1
D
R
D
R
A
I
N
R
E
V
E
R
S
E
C
U
R
R
E
N
T
I
(
m
A
)
DRAIN-SOURCE VOTAGE V (V)
DS
DS
DR
I - V
DRAIN-SOURCE VOLTAGE V (V)
D
R
A
I
N
C
U
R
R
E
N
T
I
(
m
A
)
D
0
DS
0
I - V
D
DS
DRAIN CURRENT I (mA)
F
O
R
W
A
R
D
T
R
A
N
S
F
E
R
A
D
M
I
T
T
A
N
C
E
1
D
Y - I
DRAIN-SOURCE VOLTAGE V (V)
D
R
A
I
N
C
U
R
R
E
N
T
I
(
m
A
)
D
DS
(LOW VOLTAGE REGION)
2
COMMON SOURCE
Ta=25 C
V =1.2V
GS
0.2
0
0
0.1
Ta=25 C
COMMON
V =0.9V
GS
fs
D
f
s
Y
(
m
S
)
3
5
10
30
50
COMMON SOURCE
V =3V
DS
4
6
8
10
12
20
0.2
0.3
0.4
0.5
0.6
0.4
0.6
0.8
1.0
I - V
DS
D
0
Ta=25 C
5
10
30
50
100
300
100
40
60
80
100
1.4V
2.5V
2.2V
2.0V
1.8V
1.6V
SOURCE
1.0V
1.05V
1.1V
1.15V
1.2V
2.5V
0.01
0.1
1
10
100
0.03
0.3
3
30
10
D
R
A
I
N
C
U
R
R
E
N
T
I
(
m
A
)
GATE-SOURCE VOTAGE V (V)
0.1
1
0.01
0
0.03
1
0.3
3
GS
Ta=25 C
COMMON SOURCE
D
I - V
100
30
DS
V =3V
GS
D
2
3
4
5
Ta=-25 C
T
a=
10
0
C
COMMON SOURCE
Ta=25 C
f=1MHz
V =0
DRAIN-SOURCE VOLTAGE V (V)
C
A
P
A
C
I
T
A
N
C
E
C
(
p
F
)
0.1
1
0.5
0.3
3
C - V
GS
DS
20
10
5
DS
C
rss
oss
C
C
iss
1
5
3
10
50
30
100
-0.4
-0.8
-1.2
-1.6
COMMON SOURCE
V =0
GS
Ta=25 C
D
I
S
G
DR
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