1994. 6. 24
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTC3197
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
High Gain : G
pe
=33dB(Typ.) (f=45MHz).
Good Linearity of h
FE
.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
50
mA
Emitter Current
I
E
-50
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=3V, I
C
=0
-
-
0.1
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
25
-
-
V
DC Current Gain
h
FE
V
CE
=12.5V, I
C
=12.5mA
20
-
200
Saturation
Voltage
Collector-Emitter
V
CE(sat)
I
C
=15mA, I
B
=1.5mA
-
-
0.2
V
Base-Emitter
V
BE(sat)
-
-
1.5
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
0.8
-
2.0
pF
Collector-Base Time Constant
C
c
rbb
'
V
CB
=10V, I
E
=-1mA, f=30MHz
-
-
25
pS
Transition Frequency
f
T
V
CE
=12.5V, I
C
=12.5mA
300
-
-
MHz
Power Gain (Fig.1)
G
pe
V
CC
=12.5V, I
E
=-12.5mA f=45MHz
28
-
36
dB
1994. 6. 24
2/4
KTC3197
Revision No : 0
INPUT
R =50
g
0.05
F
2.2k
I
E
7pF
CC
V
3
2
1
4
5
OUTPUT
R =50
L
T :
3.0T
1 - 2
3
-
2
8.0T
5
-
4
1.0T
0.005
F
10pF
COIL DATA
0.20mm
Cu WIRE
L=12
H WITH M-5 CORE
pe
POWER GAIN G (dB)
0
12
COLLECTOR
0
C
15
10
5
0
BASE CURRENT
B
STATIC CHARACTERISTICS
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
-2
EMITTER CURRENT I (mA)
E
pe
G - I (See Fig 1)
h - I
C
COLLECTOR CURRENT I (mA)
0.2
1
0
30
100
300
FE
DC CURRENT GAIN h
10
CURRENT
I (mA)
V (V)
VOLTAGE
BE
BASE-EMITTER
I (mA)
VOLTAGE V (V)
CE
COLLECTOR-EMITTER
20
0.1
0.2
0.3
16
20
0.4
0.8
1.2
4
8
V
=12.5V
CE
0.3
0.25
0.2
0.15
0.1
I =0.05mA
B
0
CE
V =12.5V
COMMON
EMITTER
Ta=25 C
2
4
6
8
10
12
14
2
4
6
8
10
12
14
16
COMMON
EMITTER
Ta=25 C
0.3
0.25
0.2
0.15
0.1
I =0.05mA
B
0
E
-4
-6
-8
-10
-12
-14
-16
10
20
30
40
COMMON
EMITTER
V =12.5V
f=45MHz
Ta=25 C
CC
FE
C
0.5
1
3
30
50
100
V =12.5V
CE
CE
V =3V
COMMON
EMITTER
Ta=25 C
0.005
F
Fig. 1 45MHz G
pe
TEST CIRCUIT
1994. 6. 24
3/4
KTC3197
Revision No : 0
f - I
C
COLLECTOR CURRENT I (mA)
0.2
1
10
50
100
T
TRANSITION FERQUENCY
T
C
f (MHz)
0.5
3
30
5
300
500
1k
2k
COMMON EMITTER
V =12.5V
Ta=25 C
CE
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
0.2
3
10
50
ob
1
COLLECTOR OUTPUT CAPACITANCE
20
ob
CB
C (pF)
0.5
1
10
3
5
f=1MHz
Ta=25 C
g , C - I
oe
oe
C
COLLECTOR CURRENT I (mA)
4
oe
0
OUTPUT CONDUCTANCE g (
S)
C
6
8
10
12
14
16
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
COMMON
EMITTER
f=45MHz
Ta=25 C
V =10V
CE
12.5
15
g
oe
CE
V =10V
oe
C
15
12.5
12.5
15
C
oe
V =10V
CE
oe
g
15
12.5
CE
V =10V
Ta=25 C
f=58MHz
EMITTER
COMMON
7
6
5
4
3
2
1
0
140
120
100
80
60
40
20
16
14
12
10
8
6
C
OUTPUT CONDUCTANCE g (
S)
0
oe
4
COLLECTOR CURRENT I (mA)
C
oe
oe
g , C - I
OUTPUT CAPACITANCE C (pF)
oe
oe
OUTPUT CAPACITANCE C (pF)
5
4
INPUT CONDUCTANCE g (mS)
ie
C
ie
ie
g , C - I
COLLECTOR CURRENT I (mA)
C
7
9
11
13
15
6
8
10
12
COMMON EMITTER
f=45MHz
Ta=25 C
V =10V
12.5
15
C
CE
ie
ie
g
15
12.5
CE
V =10V
V =15V
CE
12.5
10
C
ie
ie
CE
g
15
12.5
V =10V
Ta=25 C
f=58MHz
COMMON EMITTER
12
10
8
6
15
13
11
9
7
C
COLLECTOR CURRENT I (mA)
g , C - I
ie
ie
C
ie
INPUT CONDUCTANCE g (mS)
4
5
24
20
16
12
8
ie
INPUT CAPACITANCE C (pF)
INPUT CAPACITANCE C (pF)
ie
8
12
16
20
24
1994. 6. 24
4/4
KTC3197
Revision No : 0
-0.38
-0.34
-0.30
-0.26
-0.22
-0.18
-0.14
16
14
12
10
8
6
C
REVERSE TRANSFER CONDUCTANCE g (mS)
-0.10
re
4
COLLECTOR CURRENT I (mA)
C
re
re
g , b - I
re
REVERSE TRANSFER SUSCEPTANCE b (mS)
COMMON EMITTER
f=45MHz
Ta=25 C
V =10V
CE
12.5
15
re
b
g
re
CE
V =10V
15
12.5
12.5
15
V =10V
CE
re
g
b
re
15
12.5
CE
V =10V
Ta=25 C
f=58MHz
COMMON EMITTER
REVERSE TRANSFER SUSCEPTANCE b (mS)
re
g , b - I
re
re
C
COLLECTOR CURRENT I (mA)
4
re
-0.24
REVERSE TRANSFER CONDUCTANCE g (mS)
C
6
8
10
12
14
16
-0.28
-0.32
-0.36
-0.40
-0.44
-0.48
-0.52
re
g
b
re
15
12.5
CE
V =10V
Ta=25 C
f=45MHz
COMMON EMITTER
g (mS)
fe
g , b - I
fe
fe
C
COLLECTOR CURRENT I (mA)
4
60
FORWARD TRANSFER CONDUCTANCE
C
6
8
10
12
14
16
80
100
120
140
160
12.5
15
V =10V
CE
-160
-140
-120
-100
-80
-60
FORWARD TRANSFER SUSCEPTANCE
fe
b (mS)
b (mS)
fe
FORWARD TRANSFER SUSCEPTANCE
-60
-80
-100
-120
-140
-160
160
140
120
100
80
16
14
12
10
8
6
C
FORWARD TRANSFER CONDUCTANCE
60
4
COLLECTOR CURRENT I (mA)
C
fe
fe
g , b - I
fe
g (mS)
fe
b
g
fe
Ta=25 C
f=58MHz
COMMON EMITTER
V =10V
CE
V =10V
CE
12.5
15
12.5
15
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