1999. 6. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB1369
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION
TV, MONITOR VERTICAL OUTPUT APPLICATION
DRIVER STAGE APPLICATION
COROR TV CLASS B SOUND OUTPUT APPLICATION
FEATURES
High Breakdown Voltage : V
CEO
=-180V(Min.)
High Transition Frequency : f
T
=100MHz(Typ.)
High Current : I
C(max)
=-2A.
Complementary to KTD2061.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70 140 , Y:120 240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-200
V
Collector-Emitter Voltage
V
CEO
-180
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-2
A
Base Current
I
B
-0.2
A
Collector Power Dissipation (Tc=25 )
P
C
20
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-200V, I
E
=0
-
-
-1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-180
-
-
V
DC Current Gain
h
FE
V
CE
=-10V, I
C
=-400mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-1.0
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-500mA
-
-
-1.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-400mA
-
100
-
MHz
1999. 6. 24
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KTB1369
Revision No : 2
COLLECOTR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR POWER DISSIPATION P (W)
0
C
0
CASE TEMPERATURE Ta ( C)
Pc - Ta
10
DC CURRENT GAIN h
FE
-0.3
-0.1
-0.03
-0.01
COLLECTOR CURRENT I (A)
C
h - I
V ,V - I
C
COLLECTOR CURRENT I (A)
-0.01
-0.03
-0.1
-0.3
-0.01
BE(sat)
SATURATION VOLTAGE V ,V (V)
COLLECTOR CURRENT I (A)
-5
COLLECTOR-EMITTER VOLTAGE V (V)
-10
-30
-100
CE
C
-0.1
SAFE OPERATING AREA
-10
-20
-30
-40
-50
-0.2
-0.4
-0.6
-0.8
-1.0
I =-8mA
B
I =-7mA
B
I =-6mA
B
I =-5mA
B
I =-4mA
B
I =-3mA
B
I =-2mA
B
I =-1mA
B
FE
C
-1
-3
-10
30
50
100
300
500
1k
V =-10V
CE
CE(sat)
BE(sat)
C
CE(sat)
-1
-3
-10
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
V
BE(sat)
CE(sat)
V
I =10I
C
B
-50
-300
-0.3
-0.5
-1
-3
-5
-10
NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE
DERATED UNEARLY
WITH INCREASE IN
TEMPERATURE
SINGLE
*
Ther
mal
limitation
S/B limitation
DC
1mS
*
50
100
150
10
20
30
40
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