2000. 8. 23
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC231M~KRC235M
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER
CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
R1
C
E
B
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
600
mA
Collector Power Dissipation
P
C
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2000. 8. 23
2/4
KRC231M~KRC235M
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA
15
-
-
V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50 A
30
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50 A
5.0
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=30V
-
-
0.5
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=50mA, I
B
=2.5mA
-
40
80
mV
DC Current Gain
h
FE
V
CE
=5V, I
C
=50mA
200
350
800
-
Input Resistor
KRC231M
R
1
-
2.2
-
k
KRC232M
-
5.6
-
KRC233M
-
10
-
KRC234M
-
4.7
-
KRC235M
-
6.8
-
Transition Frequency
f
T
*
V
CE
=10V, I
E
=-50mA, f=100MHz -
200
-
MHz
On Resistance
Ron
f=1kHz, I
B
=1mA, V
IN
=0.3V
-
0.6
-
2000. 8. 23
3/4
KRC231M~KRC235M
Revision No : 1
COLLECTOR-EMITTER SATURATION
1
CE(sat)
30
10
3
1
COLLECTOR CURRENT I (mA)
C
V - I
h - I
C
COLLECTOR CURRENT I (mA)
0.1
FE
1
DC CURRENT GAIN h
FE
C
0.3
1
3
10
30
100
300
1k
3
10
30
100
300
1k
2k
COMMON EMITTER
V =5V
Ta=25 C
CE
CE(sat)
C
VOLTAGE V (mV)
100
300
1k
3
10
30
100
300
500
50
5
COMMON EMITTER
V =5V
Ta=25 C
CE
I /I =20
C B
B
C
I /I =10
100
30
10
3
1
0.3
0.1
0.03
B
on
ON RESISTANCE R (
)
0.1
on
0.01
BASE CURRENT I (mA)
B
R - I
0.3
1
3
10
30
100
300
1k
f=1kHz
V =0.3V
V
v
~
I =1mA
B
h
h
V
IN
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