2000 IXYS All rights reserved
1 - 2
Features
Package with copper
base plate
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
" fast-on power terminals
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
x
for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and
dimensions.
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
800
800
xxx 70-08io7
1200
1200
xxx 70-12io7
1400
1400
xxx 70-14io7
1600
1600
xxx 70-16io7
xxx = type
I
dAV
= 70 A
V
RRM
= 800-1600 V
Symbol
Test Conditions
Maximum Ratings
I
dAV
x
T
C
= 85C, module
70
A
I
dAVM
x
module
70
A
I
FRMS
, I
TRMS
per leg
36
A
I
FSM
, I
TSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
550
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
600
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
500
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
550
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
1520
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
1520
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1250
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
1250
A
2
s
(di/dt)
cr
T
VJ
= 125C
repetitive, I
T
= 50 A
150
A/
m
s
f = 50 Hz, t
P
= 200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 1/2 I
dAV
500
A/
m
s
di
G
/dt = 0.3 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
10
W
I
T
= I
TAVM
t
p
= 500
m
s
5
W
t
p
=
10 ms
1
W
P
GAVM
0.5
W
T
VJ
-40...+125
C
T
VJM
125
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
(M5)
5 15 %
Nm
(10-32 UNF)
44 15 %
lb.in.
Weight
50
g
Preliminary data
VVZ 70
VVZF 70
VTO 70
VTOF 70
Three Phase
Rectifier Bridge
C
D
E
A
2
3
B
1
5
4
6
VTOF 70
C
D
E
A
2
3
B
1
5
4
6
VTO 70
VVZ 70
C
D
E
A
2
3
B
1
A
C
D
E
2
3
B
1
VVZF 70
008
2000 IXYS All rights reserved
2 - 2
Symbol
Test Conditions
Characteristic Values
I
D
, I
R
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
I
T
= 80 A; T
VJ
= 25C
1.64
V
V
T0
For power-loss calculations only
0.85
V
r
T
11
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25C
1.5
V
T
VJ
= -40C
1.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
100
mA
T
VJ
= -40C
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
0.2
V
I
GD
5
mA
I
L
T
VJ
= 25C; t
P
= 10
m
s
450
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/
m
s
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25C; V
D
= 1/2 V
DRM
2
m
s
I
G
= 0.45 A; di
G
/dt = 0.45 A/
m
s
t
q
T
VJ
= T
VJM
; I
T
= 20 A, t
P
= 200
m
s; di/dt = -10 A/
m
s
typ.
250
m
s
V
R
= 100 V; dv/dt = 15 V/
m
s; V
D
= 2/3 V
DRM
R
thJC
per thyristor / Diode; DC
0.9
K/W
per module
0.15
K/W
R
thJH
per thyristor / Diode; DC
1.1
K/W
per module
0.157
K/W
d
S
Creeping distance on surface
16.1
mm
d
A
Creepage distance in air
7.5
mm
a
Max. allowable acceleration
50
m/s
2
VVZ 70
VVZF 70
VTO 70
VTOF 70
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