Data Sheet No. PD 60069-H
Description
The IRSF3031 is a three-terminal monolithic Smart Power
MOSFET with built-in short circuit, over-temperature, ESD and
over-voltage protections and dual set/reset input threshold .
The on-chip protection circuit latches off the Power MOSFET
in case the drain current exceeds 4A (typical) or the junction
temperature exceeds 165
o
C (typical) and keeps it off until the
input is driven below the Reset Threshold voltage.
The drain to source voltage is actively clamped at 55V prior to
the avalanche of the Power MOSFET, thus improving its perfor-
mance during turn-off with inductive loads.
The input requirements are very low (100A typical) which
makes the IRSF3031 compatible with most existing designs
based on standard power MOSFETs.
FULLY PROTECTED POWER MOSFET SWITCH
Features
Controlled slew rate reduces EMI
Over temperature protection
Over current protection
Active drain-to-source clamp
ESD protection
Lead compatible with standard Power MOSFET
Low operating input current
Monolithic construction
Dual set/reset threshold input
Applications
Solenoid Driver
DC Motor Driver
Programmable Logic Controller
Packages
IRSF3031
(NOTE: For new designs, we
recommend IR's new products IPS021 and IPS021L)
3 Lead
SOT-223
3 Lead
TO220AB
Block Diagram
Drain
Source
Q
Q
+
-
Vref
R
S
Tj
+
I n p u t
1V
3.5V
-
-
+
Bias & R ef
G r o u n d
Isolation
+
-
DRAIN
SOURCE
INPUT
Vds(clamp)
50 V
Rds(on)
200 m
Ids(sd)
4 A
Tj(sd)
165
o
C
EAS
200 mJ
Product Summary
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1
IRSF3031
2
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N
OTES
:
x
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
to International Rectifier Application Note AN-994.
y
E
AS
is tested with a constant current source of 6A applied for 700S with V
in
= 0V and starting T
j
= 25oC.
z
Input current must be limited to less than 5mA with a 1k
resistor in series with the input when the Body-Drain Diode is
forward biased.
Static Electrical Characteristics
(T
c
= 25
o
C unless otherwise specified.)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
V
ds,clamp
Drain to source clamp voltage
50
56
65
V
I
ds
= 2A
R
ds(on)
Drain to source on resistance
--
155
200
m
V
in
= 5V, I
ds
= 2A
I
dss
Drain to source leakage current
--
--
250
A
V
ds
= 40V, V
in
= 0V
V
set
Input threshold voltage
2.5
3.2
4.0
V
V
ds
= 5V, I
ds
> 10mA
V
reset
Input protection reset threshold voltage
0.5
1.0
1.5
V
V
ds
= 5V, I
ds
< 10
A
I
i,on
Input supply current (normal operation)
--
100
300
A
V
in
= 5V
I
i,off
Input supply current (protection mode)
--
120
400
A
V
in
= 5V
V
in, clamp
Input clamp voltage
9
10
--
V
I
in
= 1mA
V
sd
Body-drain diode forward drop
--
1.5
--
V
I
ds
= -2A, R
in
= 1k
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
R
thjc
Thermal resistance, junction-to-case
--
--
4
o
C/W
TO-220AB
R
thja
Thermal resistance, junction-to-ambient
--
--
60
R
thjc
Thermal resistance, junction-to-case
--
--
40
o
C/W
SOT-223
R
thja
Thermal resistance, junction-to-PCB
--
--
60
Thermal Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T
c
=
25
o
C unless otherwise specified.)
Symbol Parameter
Min.
Max. Units
Test Conditions
Vds, max Continuous drain to source voltage
--
50
V
Vin, max
Continuous input voltage
-0.3
10
Ids
Continuous drain current
--
self limited
A
Pd
Power dissipation
--
30
W
Tc
25
o
C, TO220
--
3.0
W
Tc
25
o
C, SOT223
EAS
Unclamped single pulse inductive energy
--
200
mJ
Vesd1
Electrostatic discharge voltage
(Human Body Model)
--
4000
V
100pF. 1.5k
Vesd2
Electrostatic discharge voltage
(Machine Model)
--
1000
200pF, 0
TJop
Operating junction temperature range
-55
150
TStg
Storage temperature range
-55
150
o
C
TL
Lead temperature (soldering, 10 seconds)
--
300
IRSF3031
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3
Switching ElectricalCharacteristics
(V
CC
= 14V, resistive load (R
L
) = 10
, R
in
= 100
. Specifications measured at T
C
= 25
o
C unless otherwise
specified.)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
tdon
Turn-on delay time
--
--
30
V
in
= 2V to 5V, 50% to 90%
tr
Rise time
--
--
30
s
V
in
= 2V to 5V, 90% to 10%
tdoff
Turn-off delay time
--
--
30
V
in
= 5V to 2V, 50% to 10%
tr
Fall time
--
--
30
V
in
= 5V to 2V, 10% to 90%
SR
Output positive slew rate
-6
--
6
V/
s
V
in
= 2V to 5V, +dVds/dt
SR
Output negative slew rate
-6
--
6
V
in
= 5V to 2V, -dVds/dt
Protection Characteristics
(T
C
= 25
o
C unless otherwise specified.
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
I
ds(sd)
Current limit
1.8
4
6
A
Vin = 5V
T
j(sd)
Over temperature shutdown threshold
155
165
--
o
C
Vin = 5V, Ids = 2A
V
protect
Min. input voltage for over-temp function
--
3
--
V
t
Iresp
Over current response time
--
TBD
--
s
I
peak
Peak short circuit current
--
TBD
--
A
t
reset
Protection reset time
--
TBD
--
s
t
Tresp
Over-temperature response time
--
TBD
--
Lead Assignments
Part Number
(2) D
1 2 3
In D S
3 Lead - SOT223
IRSF3031L
1 2 3
In D S
3 Lead - TO220
2 (D)
IRSF3031
IRSF3031
4
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(TO-261AA) 01-0022 05
Case Outline - SOT-223
IRSF3031
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5
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++44 (0) 20 8645 8000
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon,
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 4/11/2000
Tape & Reel - SOT223
01-0028 05 / 01-0008 02
IRGB 01-3026 01
Case Outline 3 Lead - TO220
NOTES:
2X
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