4-353
File Number
2331.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
IRFP450
14A, 500V, 0.400 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17435.
Features
14A, 500V
r
DS(ON)
= 0.400
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP450
TO-247
IRFP450
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
July 1999
4-354
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP450
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
500
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
14
8.8
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
56
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
180
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.44
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
860
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 10)
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
14
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
On Resistance (Note 2)
r
DS(ON)
I
D
= 7.9A, V
GS
= 10V (Figures 8, 9)
-
0.3
0.4
Forward Transconductance (Note 2)
g
fs
V
DS
50V, I
D
= 7.9A (Figure 12)
9.3
13.8
-
S
Turn-On Delay Time
t
d(ON)
V
DD
=
250V, I
D
14A, V
GS
= 10V, R
GS
= 6.1
,
R
L
= 17.4
MOSFET Switching Times are
Essentially Independent of Operating Temperature
-
16
27
ns
Rise Time
t
r
-
45
66
ns
Turn-Off Delay Time
t
d(OFF)
-
68
100
ns
Fall Time
t
f
-
41
60
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
14A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of OperatingTemperature
-
82
130
nC
Gate to Source Charge
Q
gs
-
12
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
42
-
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
2000
-
pF
Output Capacitance
C
OSS
-
400
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Internal Drain Inductance
L
D
Measured from the Contact
Screw on Header Closer to
Source and Gate Pins to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6.0mm (0.25in) from
Header to Source Bonding
Pad
-
12.5
-
nH
Thermal Resistance, Junction to Case
R
JC
-
-
0.70
o
C/W
Thermal Resistance, Junction to Ambient
R
JA
Free Air Operation
-
-
30
o
C/W
L
S
L
D
G
D
S
IRFP450
4-355
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
14
A
Pulse Source to Drain Current (Note 3)
I
SDM
-
-
56
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 14A, V
GS
= 0V (Figure 13)
-
-
1.4
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= 13A, dI
SD
/dt = 100A/
s
-
1300
-
ns
Reverse Recovery Charge
Q
RR
T
J
= 150
o
C, I
SD
= 13A, dI
SD
/dt = 100A/
s
-
7.4
-
C
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 7.9mH, R
G
= 25
, peak I
AS
= 14A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
15
12
9
6
3
1
0.1
10
-3
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
JC
, THERMAL IMPED
ANCE
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
t
1
t
2
0.1
0.02
0.2
0.5
0.01
0.05
10
-2
IRFP450
4-356
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
s is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1
10
10
2
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
3
10
2
10
1
0.1
I
D
, DRAIN CURRENT (A)
SINGLE PULSE
T
J
= MAX RATED
BY r
DS(ON)
AREA IS LIMITED
OPERATION IN THIS
10
s
100
s
1ms
10ms
DC
I
D
, DRAIN CURRENT (A)
0
50
100
150
200
4
8
12
16
20
250
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
0
V
GS
= 10V
V
GS
= 6.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 5.0V
DUTY CYCLE = 0.5% MAX
0
4
0
3
6
9
15
8
12
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
16
12
20
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
10
2
10
1
0.1
10
-2
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT(A)
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
0.3
0.6
10
20
30
40
r
DS(ON)
, ON-ST
A
TE RESIST
ANCE (S)
I
D
, DRAIN CURRENT (A)
50
0.7
0
0.4
0.5
0.8
V
GS
= 20V
V
GS
= 10V
60
70
0.9
10
PULSE DURATION = 2
s
DUTY CYCLE = 0.5% MAX
r
DS(ON)
, NORMALIZED DRAIN T
O
SOURCE
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 7.9A
IRFP450
4-357
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
r
DS(ON)
, NORMALIZED DRAIN T
O
SOURCE
1.25
1.05
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.15
80
I
D
= 250
A
160
BREAKDO
WN V
O
L
T
A
G
E
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C, CAP
A
CIT
ANCE (pF)
10000
8000
6000
4000
2000
0
1
2
5
10
2
5
10
2
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
20
16
12
8
4
0
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
0
0.5
1.0
1.5
2.0
2.5
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
5
2
10
5
2
1
5
2
0.1
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
T
J
= 150
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
25
50
75
100
125
I
D
= 14A
Q
g
, GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE (V)
20
16
12
8
4
0
V
DS
= 250V
V
DS
= 400V
V
DS
= 100V
IRFP450
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