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SKW30N60
1
Jul-02
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time 10
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat)
T
j
Package
Ordering Code
SKW30N60
600V
30A
2.5V
150
C
TO-247AC
Q67040-S4244
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
C E
600
V
DC collector current
T
C
= 25
C
T
C
= 100
C
I
C
41
30
Pulsed collector current, t
p
limited by T
jmax
I
C p u l s
112
Turn off safe operating area
V
CE
600V, T
j
150
C
-
112
Diode forward current
T
C
= 25
C
T
C
= 100
C
I
F
41
30
Diode pulsed current, t
p
limited by T
jmax
I
F p u l s
112
A
Gate-emitter voltage
V
G E
20
V
Short circuit withstand time
1)
V
GE
= 15V, V
CC
600V, T
j
150
C
t
S C
10
s
Power dissipation
T
C
= 25
C
P
t o t
250
W
Operating junction and storage temperature
T
j
, T
s t g
-55...+150
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-247-3-1
(TO-247AC)
SKW30N60
2
Jul-02
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction case
R
t h J C
0.5
Diode thermal resistance,
junction case
R
t h J C D
1
Thermal resistance,
junction ambient
R
t h J A
TO-247AC
40
K/W
Electrical Characteristic, at T
j
= 25
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
( B R ) C E S
V
G E
=0V, I
C
=500
A
600
-
-
Collector-emitter saturation voltage
V
C E ( s a t )
V
G E
= 15V, I
C
=30A
T
j
=25
C
T
j
=150
C
1.7
-
2.1
2.5
2.4
3.0
Diode forward voltage
V
F
V
G E
=0V, I
F
=30A
T
j
=25
C
T
j
=150
C
1.2
-
1.4
1.25
1.8
1.65
Gate-emitter threshold voltage
V
G E ( t h )
I
C
=700
A,V
C E
=V
G E
3
4
5
V
Zero gate voltage collector current
I
C E S
V
C E
=600V,V
G E
=0V
T
j
=25
C
T
j
=150
C
-
-
-
-
40
3000
A
Gate-emitter leakage current
I
G E S
V
C E
=0V,V
G E
=20V
-
-
100
nA
Transconductance
g
f s
V
C E
=20V, I
C
=30A
-
20
-
S
Dynamic Characteristic
Input capacitance
C
i s s
-
1600
1920
Output capacitance
C
o s s
-
150
180
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
G E
=0V,
f=1MHz
-
92
110
pF
Gate charge
Q
G a t e
V
C C
=480V, I
C
=30A
V
G E
=15V
-
140
182
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
T O-247AC
-
13
-
nH
Short circuit collector current
1)
I
C ( S C )
V
G E
=15V,t
S C
10
s
V
C C
600V,
T
j
150
C
-
300
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
SKW30N60
3
Jul-02
Switching Characteristic, Inductive Load, at T
j
=25
C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
44
53
Rise time
t
r
-
34
40
Turn-off delay time
t
d ( o f f )
-
291
349
Fall time
t
f
-
58
70
ns
Turn-on energy
E
o n
-
0.64
0.77
Turn-off energy
E
o f f
-
0.65
0.85
Total switching energy
E
t s
T
j
=25
C,
V
C C
=400V,I
C
=30A,
V
G E
=0/15V,
R
G
=11
,
L
1 )
=180nH,
C
1 )
=900pF
Energy losses include
"tail" and diode
reverse recovery.
-
1.29
1.62
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
t
S
t
F
-
-
-
400
32
368
-
-
-
ns
Diode reverse recovery charge
Q
r r
-
610
-
nC
Diode peak reverse recovery current
I
r r m
-
5.5
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=25
C,
V
R
=200V, I
F
=30A,
di
F
/dt=200A/
s
-
180
-
A/
s
Switching Characteristic, Inductive Load, at T
j
=150
C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
44
53
Rise time
t
r
-
34
40
Turn-off delay time
t
d ( o f f )
-
324
389
Fall time
t
f
-
67
80
ns
Turn-on energy
E
o n
-
0.98
1.18
Turn-off energy
E
o f f
-
0.92
1.19
Total switching energy
E
t s
T
j
=150
C
V
C C
=400V,I
C
=30A,
V
G E
=0/15V,
R
G
= 11
,
L
1 )
=180nH,
C
1 )
=900pF
Energy losses include
"tail" and diode
reverse recovery.
-
1.90
2.38
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
t
S
t
F
-
-
-
520
56
464
-
-
-
ns
Diode reverse recovery charge
Q
r r
-
1740
-
nC
Diode peak reverse recovery current
I
r r m
-
9.0
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=150
C
V
R
=200V, I
F
=30A,
di
F
/dt=200A/
s
-
200
-
A/
s
1)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
SKW30N60
4
Jul-02
I
C
,
COLLE
CT
OR CURRE
N
T
10Hz
100Hz
1kHz
10kHz
100kHz
0A
20A
40A
60A
80A
100A
120A
140A
160A
T
C
=110C
T
C
=80C
I
C
,
COLLE
CT
OR CURRE
N
T
1V
10V
100V
1000V
0.1A
1A
10A
100A
DC
1ms
200
s
50
s
15
s
t
p
=4
s
f,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
j
150
C, D = 0.5, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 11
)
Figure 2. Safe operating area
(D = 0, T
C
= 25
C, T
j
150
C)
P
tot
,
PO
W
E
R
D
I
SS
IP
AT
IO
N
25C
50C
75C
100C
125C
0W
50W
100W
150W
200W
250W
300W
I
C
,
COLLE
CT
OR CURRE
N
T
25C
50C
75C
100C
125C
0A
10A
20A
30A
40A
50A
60A
Limited by bond wire
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
150
C)
Figure 4. Collector current as a function of
case temperature
(V
GE
15V, T
j
150
C)
I
c
I
c
SKW30N60
5
Jul-02
I
C
,
COLLE
CT
OR CURRE
N
T
0V
1V
2V
3V
4V
5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
15V
13V
11V
9V
7V
5V
V
GE
=20V
I
C
,
COLLE
CT
OR CURRE
N
T
0V
1V
2V
3V
4V
5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
15V
13V
11V
9V
7V
5V
V
GE
=20V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25
C)
Figure 6. Typical output characteristics
(T
j
= 150
C)
I
C
,
COLLE
CT
OR CURRE
NT
0V
2V
4V
6V
8V
10V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
-55C
+150C
T
j
=+25C
V
CE(sat)
,
COLLE
CT
OR
-
EM
ITT
E
R
SATU
R
A
TI
O
N
VO
L
T
AG
E
-50C
0C
50C
100C
150C
1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
V
GE
,
GATE
-
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(V
CE
= 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
I
C
= 30A
I
C
= 60A
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