IKW08T120
^
TrenchStop Series
Power Semiconductors
1
Rev. 1 Oct-03
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Approx. 1.0V reduced V
CE(sat)
and 0.5V reduced V
F
compared to BUP305D
Short circuit withstand time 10
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low
EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat),Tj=25C
T
j,max
Package Ordering
Code
IKW08T120 1200V 8A
1.7V 150
C
TO-247AC Q67040-S4514
Maximum Ratings
Parameter Symbol
Value
Unit
Collector-emitter voltage
V
C E
1200 V
DC collector current
T
C
= 25
C
T
C
= 100
C
I
C
16
8
Pulsed collector current, t
p
limited by T
jmax
I
C p u l s
24
Turn off safe operating area
V
CE
1200V, T
j
150
C
-
24
Diode forward current
T
C
= 25
C
T
C
= 100
C
I
F
16
8
Diode pulsed current, t
p
limited by T
jmax
I
F p u l s
24
A
Gate-emitter voltage
V
G E
20
V
Short circuit withstand time
1)
V
GE
= 15V, V
CC
1200V, T
j
150
C
t
S C
10
s
Power dissipation
T
C
= 25
C
P
t o t
70 W
Operating junction temperature
T
j
-40...+150
Storage temperature
T
s t g
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-247-3-1
(TO-247AC)
G
C
E
IKW08T120
^
TrenchStop Series
Power Semiconductors
2
Rev. 1 Oct-03
Thermal Resistance
Parameter Symbol
Conditions
Max.
Value
Unit
Characteristic
IGBT thermal resistance,
junction case
R
t h J C
1.7
Diode thermal resistance,
junction case
R
t h J C D
2.3
Thermal resistance,
junction ambient
R
t h J A
TO-247AC 40
K/W
Electrical Characteristic, at T
j
= 25
C, unless otherwise specified
Value
Parameter Symbol
Conditions
min. typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V
( B R ) C E S
V
G E
=0V, I
C
=0.5m A
1200 - -
Collector-emitter saturation voltage
V
C E ( s a t )
V
G E
= 15V, I
C
=8A
T
j
=25
C
T
j
=125
C
T
j
=150
C
-
-
-
1.7
2.0
2.2
2.2
-
-
Diode forward voltage
V
F
V
G E
=0V, I
F
=8A
T
j
=25
C
T
j
=125
C
T
j
=150
C
-
-
-
1.7
1.7
1.7
2.2
-
-
Gate-emitter threshold voltage
V
G E ( t h )
I
C
=0.3m A,V
C E
=V
G E
5.0 5.8 6.5
V
Zero gate voltage collector current
I
C E S
V
C E
=1200V
,
V
G E
=0V
T
j
=25
C
T
j
=150
C
-
-
-
-
0.2
2.0
mA
Gate-emitter leakage current
I
G E S
V
C E
=0V,V
G E
=20V
- -
100
nA
Transconductance
g
f s
V
C E
=20V, I
C
=8A
- 5 -
S
Integrated gate resistor
R
G i n t
none
IKW08T120
^
TrenchStop Series
Power Semiconductors
3
Rev. 1 Oct-03
Dynamic Characteristic
Input capacitance
C
i s s
- 600 -
Output capacitance
C
o s s
- 36 -
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
G E
=0V,
f=1MHz
- 28 -
pF
Gate charge
Q
G a t e
V
C C
=960V, I
C
=8A
V
G E
=15V
- 53 -
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
T O-247AC -
-
13
nH
Short circuit collector current
1)
I
C ( S C )
V
G E
=15V,t
S C
10
s
V
C C
= 600V,
T
j
= 25
C
- 48 -
A
Switching Characteristic, Inductive Load, at T
j
=25
C
Value
Parameter Symbol
Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
- 40 -
Rise time
t
r
- 23 -
Turn-off delay time
t
d ( o f f )
- 450 -
Fall time
t
f
- 70 -
ns
Turn-on energy
E
o n
- 0.67 -
Turn-off energy
E
o f f
- 0.7 -
Total switching energy
E
t s
T
j
=25
C,
V
C C
=600V,I
C
=8A,
V
G E
=- 15/15V,
R
G
=81
,
L
2 )
=180nH,
C
2 )
=39pF
Energy losses include
"tail" and diode
reverse recovery.
- 1.37 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
- 80 -
ns
Diode reverse recovery charge
Q
r r
- 1.0 -
C
Diode peak reverse recovery current I
r r m
- 13 -
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=25
C,
V
R
=600V, I
F
=8A,
di
F
/dt=600A/
s
- 420 -
A/
s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
IKW08T120
^
TrenchStop Series
Power Semiconductors
4
Rev. 1 Oct-03
Switching Characteristic, Inductive Load, at T
j
=150
C
Value
Parameter Symbol
Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
- 40 -
Rise time
t
r
- 26 -
Turn-off delay time
t
d ( o f f )
- 570 -
Fall time
t
f
- 140 -
ns
Turn-on energy
E
o n
- 1.08 -
Turn-off energy
E
o f f
- 1.2 -
Total switching energy
E
t s
T
j
=150
C,
V
C C
=600V, I
C
=8A,
V
G E
=- 15/15V,
R
G
= 81
,
L
1 )
=180nH,
C
1 )
=39pF
Energy losses include
"tail" and diode
reverse recovery.
- 2.28 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
- 200 -
ns
Diode reverse recovery charge
Q
r r
- 2.3 -
C
Diode peak reverse recovery current I
r r m
- 20 -
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=150
C
V
R
=600V, I
F
=8A,
di
F
/dt=600A/
s
- 320 -
A/
s
1)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
IKW08T120
^
TrenchStop Series
Power Semiconductors
5
Rev. 1 Oct-03
I
C
,
COLLE
CT
OR CURRE
N
T
10Hz
100Hz
1kHz
10kHz
100kHz
0A
5A
10A
15A
20A
T
C
=110C
T
C
=80C
I
C
,
COLLE
CT
OR CURRE
N
T
1V
10V
100V
1000V
0,01A
0,1A
1A
10A
DC
10s
t
p
=2s
50s
500s
20ms
150s
f,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
j
150
C, D = 0.5, V
CE
= 600V,
V
GE
= 0/+15V, R
G
= 81
)
Figure 2. Safe operating area
(D = 0, T
C
= 25
C,
T
j
150
C;V
GE
=15V)
P
tot
,
PO
W
E
R
D
I
SS
IP
AT
IO
N
25C
50C
75C
100C
125C
0W
10W
20W
30W
40W
50W
60W
70W
I
C
,
COLLE
CT
OR CURRE
NT
25C
75C
125C
0A
5A
10A
15A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
150
C)
Figure 4. Collector current as a function of
case temperature
(V
GE
15V, T
j
150
C)
I
c
I
c
IKW08T120
^
TrenchStop Series
Power Semiconductors
6
Rev. 1 Oct-03
I
C
,
COLLE
CT
OR CURRE
NT
0V
1V
2V
3V
4V
5V
6V
0A
5A
10A
15A
20A
15V
7V
9V
11V
13V
V
GE
=17V
I
C
,
COLLE
CT
OR CURRE
NT
0V
1V
2V
3V
4V
5V
6V
0A
5A
10A
15A
20A
15V
7V
9V
11V
13V
V
GE
=17V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(
T
j
= 25C)
Figure 6. Typical output characteristic
(
T
j
= 150C)
I
C
,
COLLE
CT
OR CURRE
NT
0V
2V
4V
6V
8V
10V
12V
0A
5A
10A
15A
20A
25C
T
J
=150C
V
C
E
(s
at),
COLLE
CTOR
-
E
M
I
TT SA
TU
R
A
TION
VOL
T
AG
E
-50C
0C
50C
100C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
I
C
=8A
I
C
=15A
I
C
=5A
I
C
=2.5A
V
GE
,
GATE-EMITTER
VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(
V
GE
= 15V)
IKW08T120
^
TrenchStop Series
Power Semiconductors
7
Rev. 1 Oct-03
t,
S
W
I
T
CHI
NG
T
I
M
E
S
5A
10A
15A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t,
S
W
I
T
CHI
NG
T
I
M
E
S
5
50
100
150
200
1 ns
10 ns
100 ns
t
f
t
r
t
d(off)
t
d(on)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=150C,
V
CE
=600V, V
GE
=0/15V,
R
G
=81,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
=150C,
V
CE
=600V, V
GE
=0/15V,
I
C
=8A,
Dynamic test circuit in Figure E)
t,
SW
ITC
H
IN
G
TI
ME
S
0C
50C
100C
150C
10ns
100ns
t
r
t
f
t
d(on)
t
d(off)
V
GE
(th
)
,
GA
T
E
-
E
M
IT
T TR
SH
OLD
VOLTA
G
E
-50C
0C
50C
100C
150C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=8A,
R
G
=81,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.3mA)
IKW08T120
^
TrenchStop Series
Power Semiconductors
8
Rev. 1 Oct-03
E
,
SW
ITC
H
IN
G
EN
ER
G
Y
L
O
SS
ES
5A
10A
15A
0,0mJ
2,0mJ
4,0mJ
6,0mJ
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
E
,
SW
ITC
H
IN
G
EN
ER
G
Y
L
O
SS
ES
5
50
100
150
200
0,0 mJ
0,4 mJ
0,8 mJ
1,2 mJ
1,6 mJ
2,0 mJ
2,4 mJ
2,8 mJ
3,2 mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150C,
V
CE
=600V, V
GE
=0/15V,
R
G
=81,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150C,
V
CE
=600V, V
GE
=0/15V,
I
C
=8A,
Dynamic test circuit in Figure E)
E
,
SW
ITC
H
IN
G
EN
ER
G
Y
L
O
SS
ES
50C
100C
150C
0,0mJ
0,5mJ
1,0mJ
1,5mJ
2,0mJ
2,5mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
E
,
SW
ITC
H
IN
G
EN
ER
G
Y
L
O
SS
ES
400V
500V
600V
700V
800V
0mJ
1mJ
2mJ
3mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=8A,
R
G
=81,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
=150C,
V
GE
=0/15V,
I
C
=25A,
R
G
=22,
Dynamic test circuit in Figure E)
IKW08T120
^
TrenchStop Series
Power Semiconductors
9
Rev. 1 Oct-03
V
GE
,
GA
TE
-
E
M
IT
TER
VO
L
T
AG
E
0nC
25nC
50nC
0V
5V
10V
15V
960V
240V
c,
C
A
PAC
IT
AN
C
E
0V
10V
20V
10pF
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 17. Typical gate charge
(
I
C
=8 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
V
GE
=0V,
f = 1 MHz)
t
SC
,
SH
OR
T C
I
R
C
U
IT
WI
TH
ST
A
N
D
TIM
E
12V
14V
16V
0s
5s
10s
15s
I
C(sc)
, s
hort c
i
rc
u
i
t
COLLE
CT
OR CURRE
NT
12V
14V
16V
18V
0A
25A
50A
75A
V
GE
,
GATE
-
EMITTETR VOLTAGE
V
GE
,
GATE
-
EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
, start at T
J
=25C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(
V
CE
600V,
T
j
150
C)
IKW08T120
^
TrenchStop Series
Power Semiconductors
10
Rev. 1 Oct-03
V
CE
,
COLLE
CTOR
-
EMIT
TER
VO
L
T
AG
E
0V
200V
400V
600V
0A
10A
20A
30A
1.5us
1us
0.5us
0us
I
C
V
CE
I
C
,
COLLE
CT
OR CURRE
NT
0V
200V
400V
600V
0A
10A
20A
30A
1.5us
1us
0.5us
0us
I
C
V
CE
t,
TIME
t,
TIME
Figure 21. Typical turn on behavior
(V
GE
=0/15V,
R
G
=81,
T
j
= 150
C,
Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior
(V
GE
=15/0V,
R
G
=81,
T
j
= 150
C,
Dynamic test circuit in Figure E)
Z
thJC
,
TR
AN
SIEN
T TH
ER
M
A
L
R
E
S
I
ST
AN
C
E
10s
100s
1ms
10ms
100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Z
thJC
,
TR
AN
SIEN
T TH
ER
M
A
L
R
E
S
I
ST
AN
C
E
10s
100s
1ms
10ms
100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(
D = t
p
/ T)
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(
D=t
P
/
T)
R
, ( K / W )
,
( s )
0.187 1.73*10
-1
0.575 2.75*10
-2
0.589 2.57*10
-3
0.350 2.71*10
-4
C
1
=
1
/ R
1
R
1
R
2
C
2
=
2
/R
2
R
, ( K / W )
,
( s )
0.552 7.23*10
-2
0.732 8.13*10
-3
0.671 1.09*10
-3
0.344 1.55*10
-4
C
1
=
1
/R
1
R
1
R
2
C
2
=
2
/R
2
IKW08T120
^
TrenchStop Series
Power Semiconductors
11
Rev. 1 Oct-03
t
rr
,
R
EVER
S
E R
E
C
O
V
E
R
Y
TI
ME
200A/s
400A/s
600A/s
800A/s
0ns
100ns
200ns
300ns
400ns
500ns
T
J
=25C
T
J
=150C
Q
rr
,
RE
V
E
R
S
E
RE
CO
V
E
RY CHARGE
200A/s
400A/s
600A/s
800A/s
0C
1C
2C
T
J
=25C
T
J
=150C
di
F
/dt,
DIODE CURRENT SLOPE
di
F
/dt,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V
R
=600V, I
F
=8A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(V
R
=600V, I
F
=8A,
Dynamic test circuit in Figure E)
I
rr
,
RE
V
E
R
S
E RE
CO
V
E
RY CUR
RE
NT
200A/s
400A/s
600A/s
800A/s
0A
5A
10A
15A
20A
25A
T
J
=25C
T
J
=150C
d
i
rr
/d
t
,
DI
ODE
P
EAK
RAT
E
OF
F
A
LL
OF
REV
E
R
S
E
RE
CO
V
E
R
Y
CUR
R
E
N
T
200A/s
400A/s
600A/s
800A/s
-0A/s
-100A/s
-200A/s
-300A/s
-400A/s
-500A/s
-600A/s
T
J
=25C
T
J
=150C
di
F
/dt,
DIODE CURRENT SLOPE
di
F
/dt,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V
R
=600V, I
F
=8A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V
R
=600V, I
F
=8A,
Dynamic test circuit in Figure E)
IKW08T120
^
TrenchStop Series
Power Semiconductors
12
Rev. 1 Oct-03
I
F
,
F
O
RWA
R
D CURRE
NT
0V
1V
2V
0A
10A
20A
150C
T
J
=25C
V
F
,
FOR
W
AR
D
VOLTA
G
E
-50C
0C
50C
100C
0,0V
0,5V
1,0V
1,5V
2,0V
8A
5A
I
F
=15A
2,5A
V
F
,
FORWARD VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
IKW08T120
^
TrenchStop Series
Power Semiconductors
13
Rev. 1 Oct-03
dimensions
symbol
[mm]
[inch]
min
max
min
max
A
4.78
5.28
0.1882
0.2079
B
2.29
2.51
0.0902
0.0988
C
1.78
2.29
0.0701
0.0902
D
1.09
1.32
0.0429
0.0520
E
1.73
2.06
0.0681
0.0811
F
2.67
3.18
0.1051
0.1252
G
0.76 max
0.0299 max
H
20.80
21.16
0.8189
0.8331
K
15.65
16.15
0.6161
0.6358
L
5.21
5.72
0.2051
0.2252
M
19.81
20.68
0.7799
0.8142
N
3.560
4.930
0.1402
0.1941
P
3.61
0.1421
Q
6.12
6.22
0.2409
0.2449
TO-247AC
IKW08T120
^
TrenchStop Series
Power Semiconductors
14
Rev. 1 Oct-03
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
r r m
90% I
r r m
10% I
r r m
di /dt
F
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
r r
Q =Q
Q
r r
S
F
+
t =t
t
r r
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
j
1
1
2
2
n
n
T
C
r
r
r
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
=180nH
and Stray capacity C
=39pF.
IKW08T120
^
TrenchStop Series
Power Semiconductors
15
Rev. 1 Oct-03
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
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