D a t a S h e e t , V 1 . 0 , J a n u a r y 2 0 0 4
N e v e r s t o p t h i n k i n g .
B T S 5 4 3 4 G
S m a r t H i g h - S i d e P o w e r S w i t c h
P R O F E T
F o u r C h a n n e l s , 6 0 m
A u t o m o t i v e P o w e r
Smart High-Side Power Switch
BTS 5434G
Table of Contents
Page
Data Sheet
2
V1.0, 2004-01-23
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 5434G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .11
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1.1
Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.2
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.3
Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
4.2.1
Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.2
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.3
Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.4
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4.3.1
ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.3.2
OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3.3
Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.3.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5 Package Outlines BTS 5434G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Data Sheet
3
V1.0, 2004-01-23
Type
Ordering Code
Package
BTS 5434G
Q67060-S6157
P-DSO-28-19
Smart High-Side Power Switch
PROFET
BTS 5434G
Product Summary
The BTS 5434G is a four channel high-side power
switch in P-DSO-28-19 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Basic Features
Very low standby current
3.3 V and 5 V compatible logic pins
Improved electromagnetic compatibility (EMC)
Stable behavior at under voltage
Logic ground independent from load ground
Secure load turn-off while logic ground disconnected
Optimized inverse current capability
Operating voltage
V
bb(on)
4.5 .. 28 V
Over voltage protection
V
bb(AZ)
41 V
On-State resistance
R
DS(ON)
60 m
Nominal load current (one channel active)
I
L(nom)
3.4 A
Current limitation
I
L(LIM)
23 A
Current limitation repetitive
I
L(SCr)
6 A
Standby current for whole device with load
I
bb(OFF)
5 A
P-DSO-28-19
Smart High-Side Power Switch
BTS 5434G
Data Sheet
4
V1.0, 2004-01-23
Protective Functions
Reverse battery protection without external components
Short circuit protection
Overload protection
Multi-step current limitation
Thermal shutdown with restart
Thermal restart at reduced current limitation
Over voltage protection without external resistor
Loss of ground protection
Electrostatic discharge protection (ESD)
Diagnostic Functions
Enhanced IntelliSense signal for each channel
Enable function for diagnosis pins (IS1 .. IS4)
Proportional load current sense signal by current source
High accuracy of current sense signal at wide load current range
Open load detection in ON-state by load current sense
Open load detection in OFF-state by voltage source
Feedback on over temperature and current limitation in ON-state
Applications
C compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
All types of resistive, inductive and capacitive loads
Suitable for loads with high inrush currents, so as lamps
Suitable for loads with low currents, so as LEDs
Replaces electromechanical relays, fuses and discrete circuits
Smart High-Side Power Switch
BTS 5434G
Overview
Data Sheet
5
V1.0, 2004-01-23
1
Overview
The BTS 5434G is a four channel high-side power switch (four times 60 m
) in
P-DSO-28-19 package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 to IS4 provide a sophisticated diagnostic feedback
signal including current sense function and open load in off state. The diagnosis signals
can be switched on and off by the sense enable pins SENA and SENB.
Integrated ground resistors as well as integrated resistors at each input pin (IN1, IN2,
IN3, IN4, SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is built by two dual
channel chips, monolithically integrated in Smart SIPMOS technology.
1.1
Block Diagram
Figure 1
Block Diagram
OUT4
VBB
OUT1
OUT3
channel 3,4 (Chip B)
control and protection circuit
equivalent to
channel 1,2
OUT2
IN3
IN4
IS3
IS4
SENB
channel 1,2 (Chip A)
internal
power
supply
open load
detection
logic
gate control
&
charge pump
clamp for
inductive load
multi step
load current
limitation
load current
sense
temperature
sensor
ESD
protection
IN1
IS1
SENA
IN2
IS2
GNDB
R
GND
GNDA
R
GND
Smart High-Side Power Switch
BTS 5434G
Overview
Data Sheet
6
V1.0, 2004-01-23
1.2
Terms
Following figure shows all terms used in this data sheet.
Figure 2
Terms
Chip B
Chip A
Terms4ch.emf
I
IN1
V
IN1
OUT1
I
IN2
V
IN2
V
IN4
I
IS1
V
IS3
I
IS2
V
bb
V
IS4
I
SENB
I
L1
V
OUT2
V
OUT1
V
DS2
V
DS1
I
L2
I
bb
IN1
IN2
IS1
IS2
SENB
VBB
OUT2
I
IS3
I
IS4
IS3
IS4
V
IS1
V
IS2
V
SENA
V
IN3
I
IN3
I
IN4
IN3
IN4
I
SENA
SENA
V
SENB
OUT3
I
L3
I
L4
OUT4
V
OUT4
V
OUT3
V
DS4
V
DS3
GNDA
I
GND
GNDB
BTS 5434G
Smart High-Side Power Switch
BTS 5434G
Pin Configuration
Data Sheet
7
V1.0, 2004-01-23
2
Pin Configuration
2.1
Pin Assignment BTS 5434G
Figure 3
Pin Configuration P-DSO-28-19
2.2
Pin Definitions and Functions
Pin
Symbol
I/O
OD
Function
3
IN1
I
Input signal for channel 1
6
IN2
I
Input signal for channel 2
9
IN3
I
Input signal for channel 3
12
IN4
I
Input signal for channel 4
4
IS1
O
Diagnosis output signal channel 1
5
IS2
O
Diagnosis output signal channel 2
10
IS3
O
Diagnosis output signal channel 3
11
IS4
O
Diagnosis output signal channel 4
(top view)
OUT1
OUT1
OUT1
OUT2
VBB
OUT2
28
27
26
25
24
23
GNDA
IN1
IS1
IS2
VBB
IN2
1
2
3
4
5
6
SENA
7
8
9
10
22
21
20
19
OUT3
OUT3
OUT3
OUT2
VBB
11
12
13
14
18
17
16
15
OUT4
OUT4
OUT4
VBB
GNDB
IN3
IS3
IS4
IN4
SENB
Smart High-Side Power Switch
BTS 5434G
Pin Configuration
Data Sheet
8
V1.0, 2004-01-23
7
SENA
I
Sense Enable input for channel 1&2
13
SENB
I
Sense Enable input for channel 3&4
25, 26, 27 OUT1
O
Protected high-side power output channel 1
22, 23, 24 OUT2
O
Protected high-side power output channel 2
19, 20, 21 OUT3
O
Protected high-side power output channel 3
16, 17, 18 OUT4
O
Protected high-side power output channel 4
2
GNDA
-
Ground connection chip A
8
GNDB
-
Ground connection chip B
1, 14, 15,
28
VBB
-
Positive power supply for logic supply as well as
output power supply
Pin
Symbol
I/O
OD
Function
Smart High-Side Power Switch
BTS 5434G
Electrical Characteristics
Data Sheet
9
V1.0, 2004-01-23
3
Electrical Characteristics
3.1
Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.
Unless otherwise specified:
T
j
= 25
C
Pos.
Parameter
Symbol
Limit Values
Unit Test
Conditions
min.
max.
Supply Voltage
3.1.1
Supply voltage
V
bb
-16
28
V
3.1.2
Supply voltage for full short
circuit protection (single pulse)
(
T
j(0)
= -40C .. 150C)
V
bb(SC)
0
28
V
L
= 8 H,
R
= 0.2
1)
3.1.3
Voltage at power transistor
V
DS
-
52
V
3.1.4
Supply Voltage for Load Dump
protection
V
bb(LD)
41
V
R
I
= 2
2)
R
L
= 6.8
Power Stages
3.1.5
Load current
I
L
-
I
L(LIM)
A
-
3)
3.1.6
Maximum energy dissipation
single pulse
E
AS
-
0.58
J
I
L(0)
= 2 A
4)
T
j(0)
= 150C
3.1.7
Power dissipation (DC)
P
tot
-
1.7
W
T
a
= 85 C
5)
T
j
150 C
Logic Pins
3.1.8
Voltage at input pin
V
IN
-5
-16
10
V
t
2 min
3.1.9
Current through input pin
I
IN
-2.0
-8.0
2.0
mA
t
2 min
3.1.10
Voltage at sense enable pin
V
SEN
-5
-16
10
V
t
2 min
3.1.11
Current through sense enable
pin
I
SEN
-2.0
-8.0
2.0
mA
t
2 min
3.1.12
Current through sense pin
I
IS
-25
10
mA
Smart High-Side Power Switch
BTS 5434G
Electrical Characteristics
Data Sheet
10
V1.0, 2004-01-23
Temperatures
3.1.13
Junction Temperature
T
j
-40
150
C
3.1.14
Dynamic temperature increase
while switching
T
j
-
60
C
3.1.15
Storage Temperature
T
stg
-55
150
C
ESD Susceptibility
3.1.16
ESD susceptibility HBM
IN, SEN
IS
OUT
V
ESD
-1
-2
-4
1
2
4
kV
according to
EIA/JESD
22-A 114B
1)
R and L describe the complete circuit impedance including line, contact and generator impedances
2)
Load Dump is specified in ISO 7636, R
I
is the internal resistance of the Load Dump pulse generator
3)
Current limitation is a protection feature. Operation in current limitation is considered as "outside" normal
operating range. Protection features are not designed for continuous repetitive operation.
4)
Pulse shape represents inductive switch off:
I
L
(t)
=
I
L
(0)
* (1 -
t
/
t
peak
); 0 <
t
<
t
peak
5)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm
2
copper heatsinking area (one
layer, 70 m thick) for V
bb
connection. PCB is vertical without blown air.
Unless otherwise specified:
T
j
= 25
C
Pos.
Parameter
Symbol
Limit Values
Unit Test
Conditions
min.
max.
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
Data Sheet
11
V1.0, 2004-01-23
4
Block Description and Electrical Characteristics
4.1
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1
Output On-State Resistance
The on-state resistance
R
DS(ON)
depends on the supply voltage as well as the junction
temperature
T
j
.
Figure 4
shows that dependencies for the typical on-state resistance.
The behavior in reverse polarity mode is described in
Section 4.2.2
.
Figure 4
Typical On-State Resistance
4.1.2
Input Circuit
Figure 5
shows the input circuit of the BTS 5434G. There is an integrated input resistor
that makes external components obsolete. The current sink to ground ensures that the
device switches off in case of open input pin. The zener diode protects the input circuit
against ESD pulses.
Figure 5
Input Circuit (IN1 .. IN4)
30
40
50
60
70
80
90
-50 -25
0
25
50
75 100 125 150
R
DS(ON)
/m
T /
C
40
60
80
100
120
140
160
0
5
10
15
20
25
R
DS(ON)
/m
V
bb
/V
V
bb
= 13.5 V
T
j
= 25C
IN
R
IN
I
IN
GND
R
GND
Input.emf
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
Data Sheet
12
V1.0, 2004-01-23
A high signal at the input pin causes the power DMOS to switch on with a dedicated
slope, which is optimized in terms of EMC emission.
Figure 6
Switching a Load (resistive)
4.1.3
Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage V
OUT
drops
below ground potential, because the inductance intends to continue driving the current.
Figure 7
Output Clamp (OUT1 .. OUT4)
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps that negative output voltage at a certain level (V
OUT(CL)
). See
Figure 7
and
Figure 8
for details. Nevertheless, the maximum allowed load inductance is limited.
IN
V
OUT
t
SwitchOn.emf
t
ON
t
OFF
t
90%
10%
70%
dV /dt
ON
30%
70%
dV /dt
OFF
30%
OutputClamp.emf
OUT
GND
V
bb
VBB
L,
R
L
V
OUT
I
L
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
Data Sheet
13
V1.0, 2004-01-23
Figure 8
Switching an Inductance
Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated in the
BTS 5434G. This energy can be calculated with following equation:
Following equation simplifies under the assumption of
R
L
= 0:
The energy, which is converted into heat, is limited by the thermal design of the
component. See
Figure 9
for the maximum allowed energy dissipation.
Figure 9
Maximum energy dissipation single pulse,
T
j,Start
= 150C
V
OUT
InductiveLoad.emf
t
I
L
t
V
OUT(CL)
V
bb
IN = 5V
IN = 0V
0
E
V
bb
V
OUT(CL)
+
(
)
V
OUT(CL)
R
L
-------------------------- ln
1
R
L
I
L
V
OUT(CL)
--------------------------
+
I
L
+
L
R
L
------
=
E
1
2
---
LI
L
2
1
V
bb
V
OUT(CL)
--------------------------
+
=
0.04
0.05
0.1
0.2
0.3
0.4
0.5
0.6
2
3
4
5
6
7
8
9
10
E
AS
/J
I /A
V
bb
= 12 V
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
Data Sheet
14
V1.0, 2004-01-23
4.1.4
Electrical Characteristics
Unless otherwise specified:
V
bb
= 9 V to 16 V,
T
j
= -40
C to +150 C, typical values:
V
bb
= 13.5 V,
T
j
= 25 C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
General
4.1.1
Operating voltage
V
bb
4.5
28
V
V
IN
= 4.5 V
R
L
= 12
V
DS
< 0.5 V
4.1.2
Operating current
one channel active
all channels active
I
GND
1.8
7.2
4
16
mA
V
IN
= 5 V
4.1.3
Standby current for
whole device with
load
I
bb(OFF)
3
5
5
30
A
V
IN
= 0 V
V
SEN
= 0 V
T
j
= 25C
T
j
= 85C
1)
T
j
= 150C
Output characteristics
4.1.4
On-State resistance
per channel
R
DS(ON)
45
90
60
115
m
I
L
= 2.5 A
T
j
= 25 C
T
j
= 150 C
4.1.5
Output voltage drop
limitation at small load
currents
V
DS(NL)
40
mV
I
L
< 0.25 A
4.1.6
Nominal load current
per channel
one channel active
four channels active
I
L(nom)
3.4
1.9
A
T
a
= 85 C
T
j
150 C
2)
3)
4.1.7
Output clamp
V
OUT(CL)
-16
-13
-10
V
I
L
= 40 mA
4.1.8
Output leakage
current per channel
I
L(OFF)
0.1
6
A
V
IN
= 0 V
4.1.9
Inverse current
capability
-I
L(inv)
3
A
1)
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
Data Sheet
15
V1.0, 2004-01-23
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Thermal Resistance
4.1.10 Junction to case
R
thjc
-
30 K/W
-
1)
4.1.11 Junction to ambient
one channel active
all channels active
R
thja
-
-
44
38
K/W
-
1)2)
Input characteristics
4.1.12 Input resistor
R
IN
1.8
3.5
5.5
k
4.1.13 L-input level
V
IN(L)
-0.3
1.0
V
4.1.14 H-input level
V
IN(H)
2.5
5.7
V
4.1.15 L-input current
I
IN(L)
3
18
75
A
V
IN
= 0.4 V
4.1.16 H-input current
I
IN(H)
10
38
75
A
V
IN
= 5 V
Timings
4.1.17 Turn-on time to
90% V
bb
t
ON
100
250
s
R
L
= 12
V
bb
= 13.5 V
4.1.18 Turn-off time to
10% V
bb
t
OFF
120
250
s
R
L
= 12
V
bb
= 13.5 V
4.1.19 slew rate
30% to 70% V
bb
d
V
/ d
t
ON
0.1
0.25
0.5
V/s
R
L
= 12
V
bb
= 13.5 V
4.1.20 slew rate
70% to 30% V
bb
-d
V
/
d
t
OFF
0.1
0.25
0.5
V/s
R
L
= 12
V
bb
= 13.5 V
1)
Not subject to production test, specified by design
2)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm
2
copper heatsinking area (one
layer, 70 m thick) for V
bb
connection. PCB is vertical without blown air.
3)
Not subject to production test, parameters are calculated from R
DS(ON)
and R
th
Unless otherwise specified:
V
bb
= 9 V to 16 V,
T
j
= -40
C to +150 C, typical values:
V
bb
= 13.5 V,
T
j
= 25 C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
Smart High-Side Power Switch
BTS 5434G
Data Sheet
16
V1.0, 2004-01-23
4.2
Protection Functions
The device provides embedded protective functions. Integrated protection functions are
designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as "outside" normal operating range. Protection
functions are neither designed for continuous nor repetitive operation.
4.2.1
Over Load Protection
The load current
I
OUT
is limited by the device itself in case of over load or short circuit to
ground. There are three steps of current limitation which are selected automatically
depending on the voltage
V
DS
across the power DMOS. Please note that the voltage at
the OUT pin is
V
bb
-
V
DS
. Please refer to following figure for details.
Figure 10
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to
rapid temperature rise inside. A temperature sensor for each channel causes an
overheated channel to switch off to prevent destruction. After cooling down with thermal
hysteresis, the channel switches on again. Please refer to
Figure 11
for details.
Figure 11
Shut Down by Over Temperature with Current Limitation
In short circuit condition, the load current is initially limited to
I
L(LIM)
. After thermal restart,
the current limitation level is reduced to
I
L(SCr)
. The current limitation level is reset to
I
L(LIM)
by switching off the device (
V
IN
= 0 V).
I
L
CurrentLimitation.emf
V
DS
5
10
15
20
5
10
15
20
25
IN
I
L
I
IS
t
I
L(LIM)
I
L(SCr)
t
t
OverLoad.emf
t
OFF(SC)
Smart High-Side Power Switch
BTS 5434G
Data Sheet
17
V1.0, 2004-01-23
4.2.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional
power is dissipated by the integrated ground resistor. Use following formula for
estimation of total power dissipation
P
diss(rev)
in reverse polarity mode.
The reverse current through the intrinsic body diode has to be limited by the connected
load. The current through sense pins IS1 to IS4 has to be limited (please refer to
maximum ratings on
Page 9
). The current through the ground pin (GND) is limited
internally by
R
GND
. The over-temperature protection is not active during reverse polarity.
4.2.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in
Section 4.1.3
, there is
a clamp mechanism for over voltage protection. Because of the integrated ground
resistor, over voltage protection does not require external components.
As shown in
Figure 12
, in case of supply voltages greater than
V
bb(AZ)
, the power
transistor switches on and the voltage across logic part is clamped. As a result, the
internal ground potential rises to V
bb
-
V
bb(AZ)
. Due to the ESD zener diodes, the
potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the
impedance of the connected circuitry.
Figure 12
Over Voltage Protection
4.2.4
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground,
the BTS 5434G securely changes to or keeps in off state.
P
diss(rev)
V
DS(rev)
I
L
(
)
all channels
2
V
bb
2
R
GND
---------------
+
=
OUT
VBB
OverVoltage .emf
V
OUT
R
GND
logic
GND
IN
IS
SEN R
SEN
R
IN
ZD
ESD
ZD
AZ
internal ground
Smart High-Side Power Switch
BTS 5434G
Data Sheet
18
V1.0, 2004-01-23
4.2.5
Electrical Characteristics
Unless otherwise specified:
V
bb
= 9 V to 16 V,
T
j
= -40
C to +150 C , typical values:
V
bb
= 13.5 V,
T
j
= 25 C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
Over Load Protection
4.2.1
Load current limitation
I
L(LIM)
23
42
A
V
DS
= 7 V
14
28
A
V
DS
= 14 V
4.2.2
Repetitive short circuit
current limitation
I
L(SCr)
6
A
T
j
=
T
j(SC)
1)
1)
Not subject to production test, specified by design
4.2.3
Initial short circuit shut
down time
t
OFF(SC)
0.5
ms
T
jStart
= 25 C
1)
4.2.4
Thermal shut down
temperature
T
j(SC)
150
170
1)
C
-
4.2.5
Thermal hysteresis
T
j
7
K
-
1)
Reverse Battery
4.2.6
Drain-Source diode
voltage (V
OUT
> V
bb
)
-V
DS(rev)
900
mV
I
L
= -3.5 A
V
bb
= -13.5 V
T
j
= 150C
4.2.7
Reverse current
through each GND
pin
-
I
GND
65
mA
V
bb
= -13.5 V
1)
Ground Circuit
4.2.8
Integrated Resistors
in GND lines
R
GND
115
220
350
Over Voltage
4.2.9
Over voltage
protection
V
bb(AZ)
41
47
53
V
I
bb
= 4 mA
Loss of GND
4.2.10 Output leakage
current while GND
disconnected
I
L(GND)
1
mA
I
IN
= 0,
I
SEN
= 0
,
I
IS
= 0,
I
GND
= 0
1)
2)
2)
no connection at these pins
Smart High-Side Power Switch
BTS 5434G
Data Sheet
19
V1.0, 2004-01-23
4.3
Diagnosis
For diagnosis purpose, the BTS 5434G provides an Enhanced IntelliSense signal at pins
IS1 to IS4. This means in detail, the current sense signal
I
IS
, a proportional signal to the
load current (ratio
k
ILIS
=
I
L
/
I
IS
), is provided in ON-state as long as no failure mode
occurs. In case of open load in OFF-state, the voltage
V
IS(fault)
is fed to the diagnosis pin.
Figure 13
Block Diagram: Diagnosis
Table 1
Truth Table
Operation Mode
Input
Level
Output
Level
Diagnostic Output
SEN = H
SEN = L
Normal Operation (OFF)
L
Z
Z
Z
Short Circuit to GND
Z
Z
Z
Over Temperature
Z
Z
Z
Short Circuit to V
bb
V
bb
V
IS
=
V
IS(fault)
Z
Open Load
<
V
OUT(OL)
>
V
OUT(OL)
Z
V
IS
=
V
IS(fault)
Z
Z
channel 1
channel 2
gate control
I
IS2
OUT2
I
IS1
OUT1
SEN
IS1
C
IN1
V
OUT(OL)
0
1
0
1
0
1
V
IS(fault)
R
IN1
R
SEN
gate control
IN2
IS2
0
1
R
IN2
diagnosis
GND
R
OL
S
OL
load
VBB
Sense.emf
R
IS1
R
IS2
R
lim
R
lim
Diagnosis equivalent for channel 3 and 4
Smart High-Side Power Switch
BTS 5434G
Data Sheet
20
V1.0, 2004-01-23
4.3.1
ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current.
The accuracy of the ratio (
k
ILIS
=
I
L
/
I
IS
) depends on the temperature. Please refer to
following
Figure 14
for details. Usually a resistor
R
IS
is connected to the current sense
pin. It is recommended to use sense resistors
R
IS
> 500
. A typical value is 4.7 k.
Figure 14
Current sense ratio
k
ILIS
1)
Normal Operation (ON)
H
~
V
bb
I
IS
=
I
L
/
k
ILIS
Z
Current Limitation
<
V
bb
Z
Z
Short Circuit to GND
<<
V
bb
Z
Z
Over Temperature
Z
Z
Z
Short Circuit to V
bb
V
bb
I
IS
<
I
L
/
k
ILIS
Z
Open Load
~V
bb
Z
Z
L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Sheet in
Section 4.3.4
(Position
4.3.6
).
Table 1
Truth Table
Operation Mode
Input
Level
Output
Level
Diagnostic Output
SEN = H
SEN = L
1000
2000
3000
4000
5000
6000
7000
8000
0
0.5
1
1.5
2
2.5
3
3.5
4
k
ILIS
I
L
/A
dummy
T
j
= 150
C
dummy
T
j
= -40
C
Smart High-Side Power Switch
BTS 5434G
Data Sheet
21
V1.0, 2004-01-23
In case of over current as well as over temperature, the current sense signal is switched
off. As a result, one threshold is enough to distinguish between normal and faulty
operation. Open load and over load can be differentiated by switching off the channel
and using open load detection in off-state.
Details about timings between the diagnosis signal
I
IS
and the output voltage
V
OUT
and
load current
I
L
in ON-state can be found in
Figure 15
.
Figure 15
Timing of Diagnosis Signal in ON-state
4.3.2
OFF-State Diagnosis
Details about timings between the diagnosis signal
I
IS
and the output voltage
V
OUT
and
load current
I
L
in OFF-state can be found in
Figure 16
.
Figure 16
Timing of Diagnosis Signal in OFF-state
SwitchOn.emf
IN
V
OUT
I
IS
t
t
t
I
L
t
ON
t
ON
t
sIS(ON)
t
sIS(LC)
OFF
SwitchOff.emf
IN
V
OUT
I
IS
t
t
t
I
L
t
t
OFF
Open Load
V
IS(fault)
/ R
S
ON
OFF
t
d(fault)
t
s(fault)
Smart High-Side Power Switch
BTS 5434G
Data Sheet
22
V1.0, 2004-01-23
For open load diagnosis in off state an external output pull-up resistor (
R
OL
) is
recommended. For calculation of the pull-up resistor, just the external leakage current
I
leakage
and the open load threshold voltage
V
OUT(OL)
has to be taken into account.
I
leakage
defines the leakage current in the complete system e.g. caused by humidity.
There is no internal leakage current from out to ground at BTS 5434G.
V
bb(min)
is the
minimum supply voltage at which the open load diagnosis in off state must be ensured.
To reduce the stand-by current of the system, an open load resistor switch (
S
OL
) is
recommended.
4.3.3
Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN).
See
Figure 17
for details on the timing between SEN pin and diagnosis signal
I
IS
.
Please note that the diagnosis is disabled, when no signal is provided at pin SEN.
Figure 17
Timing of Sense Enable Signal
The SEN pin circuit is designed equal to the input pin. Please refer to
Figure 5
for details.
The resistors
R
lim
are recommended to limit the current through the sense pins IS1 to
IS4 in case of reverse polarity and over voltage. Please refer to maximum ratings on
Page 9
.
The stand-by current of the BTS 5434G is minimized, when both input pins (IN1 and IN2
or IN3 and IN4) and the according sense enable pin (SENA or SENB) are on low level.
R
OL
V
bb(min)
V
OUT(OL,max)
I
leakage
-----------------------------------------------------------
=
t
dIS(SEN)
t
sIS(SEN)
t
SEN.emf
t
sIS(SEN)
t
t
dIS(SEN)
I
IS
SEN
Smart High-Side Power Switch
BTS 5434G
Data Sheet
23
V1.0, 2004-01-23
4.3.4
Electrical Characteristics
Unless otherwise specified:
V
bb
= 9 V to 16 V,
T
j
= -40
C to +150 C,
V
SEN
= 5 V,
typical values:
V
bb
= 13.5 V,
T
j
= 25 C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
Open Load at OFF-State
4.3.1
Open load detection
threshold voltage
V
OUT(OL)
1.6
2.8
4.4
V
4.3.2
Sense signal in case
of open load
V
IS(fault)
3.5
6.5
V
V
IN
= 0 V
V
OUT
=
V
bb
I
IS
= 1 mA
4.3.3
Sense signal current
limitation
I
IS(LIM)
2
mA
V
IN
= 0 V
V
OUT
=
V
bb
4.3.4
Sense signal invalid
after negative input
slope
t
d(fault)
1.2
ms
V
IN
= 5 V to 0 V
V
OUT
=
V
bb
4.3.5
Fault signal settling
time
t
s(fault)
200
s
V
IN
= 0 V
V
OUT
= 0 V to
>
V
OUT(OL)
I
IS
= 1 mA
Load Current Sense ON-State
4.3.6
Current sense ratio
k
ILIS
V
IN
= 5 V
I
L
= 40 mA
I
L
= 1.3 A
I
L
= 2.2 A
I
L
= 4.0 A
1000
2300
2410
2465
4035
3050
2920
2850
8000
3580
3380
3275
T
j
= -40 C
I
L
= 40 mA
I
L
= 1.3 A
I
L
= 2.2 A
I
L
= 4.0 A
1400
2465
2520
2580
3410
2920
2875
2870
6000
3275
3220
3160
T
j
= 150 C
4.3.7
Current sense voltage
limitation
V
IS(LIM)
5.0
6.2
7.5
V
I
IS
= 0.5 mA
I
L
= 3.5 A
4.3.8
Current sense
leakage/offset current
I
IS(LH)
5
A
V
IN
= 5 V
I
L
= 0 A
Smart High-Side Power Switch
BTS 5434G
Data Sheet
24
V1.0, 2004-01-23
4.3.9
Current sense
leakage, while
diagnosis disabled
I
IS(dis)
2
A
V
SEN
= 0 V
I
L
= 3.5 A
4.3.10 Current sense settling
time to
I
IS
static
10%
after positive input
slope
t
sIS(ON)
300
s
V
IN
= 0 V to 5 V
I
L
= 3.5 A
1)
4.3.11 Current sense settling
time to
I
IS
static
10%
after change of load
current
t
sIS(LC)
50
s
V
IN
= 5 V
I
L
= 1.3 A to 2.2 A
1)
Sense Enable
4.3.12 Input resistance
R
SEN
1.8
3.5
5.5
k
4.3.13 L-input level
V
SEN(L)
-0.3
1.0
V
4.3.14 H-input level
V
SEN(H)
2.5
5.7
V
4.3.15 L-input current
I
SEN(L)
3
18
75
A
V
SEN
= 0.4 V
4.3.16 H-input current
I
SEN(H)
10
38
75
A
V
SEN
= 5 V
4.3.17 Current sense settling
time
t
sIS(SEN)
3
25
s
V
SEN
= 0 V to 5 V
V
IN
= 0 V
V
OUT
>
V
OUT(OL)
4.3.18 Current sense
deactivation time
t
dIS(SEN)
25
s
V
SEN
= 5 V to 0 V
I
L
= 3.5 A
R
S
= 5 k
1)
1)
Not subject to production test, specified by design
Unless otherwise specified:
V
bb
= 9 V to 16 V,
T
j
= -40
C to +150 C,
V
SEN
= 5 V,
typical values:
V
bb
= 13.5 V,
T
j
= 25 C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
Smart High-Side Power Switch
BTS 5434G
Package Outlines BTS 5434G
Data Sheet
25
V1.0, 2004-01-23
5
Package Outlines BTS 5434G
1
14
15
28
18.1
-0.4
Index Marking
1)
2.45
-0.1
7.6
10.3
0.3
-0.2
0.2
2.65 max
-0.2
1.27
0.23
+0.09
0.1
0.4
0.35 x 45
+0.8
+0.15
0.35
2)
8 max
0.2 28x
1)
2) Does not include dambar protrusion of 0.05 max per side
1) Does not include plastic or metal protrusions of 0.15 max per side
GPS05123
P-DSO-28-19
(Plastic Dual Small Outline Package)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page "Products": http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Smart High-Side Power Switch
BTS 5434G
Revision History
Data Sheet
26
2004-01-23
6
Revision History
Version
Date
Changes
V1.0
04-01-23
initial version
Edition 2004-01-23
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen, Germany
Infineon Technologies AG 1/31/04.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Smart High-Side Power Switch
BTS 5434G
Data Sheet
27
2004-01-23
h t t p : / / w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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