1999-10-28
Page 1
BSP318S
Final data
SIPMOS
Small-Signal-Transistor
Features
N-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v/dt rated
Product Summary
Drain source voltage
V
V
DS
60
Drain-Source on-state resistance
R
DS(on)
0.09
Continuous drain current
A
I
D
2.6
VPS05163
1
2
3
4
Type
Package
Ordering Code
BSP318S
SOT-223
Q67000-S4002
Pin 1
Pin 2, 4
PIN 3
G
D
S
Maximum Ratings,at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
2.6
A
I
D
Pulsed drain current
T
A
= 25 C
I
D puls
10.4
Avalanche energy, single pulse
I
D
= 2.6 A,
V
DD
= 25 V,
R
GS
= 25
60
mJ
E
AS
Avalanche current,periodic limited by
T
jmax
A
I
AR
2.6
Avalanche energy, periodic limited by
T
jmax
0.18
mJ
E
AR
Reverse diode d
v/dt
I
S
= 2.6 A,
V
DS
= 20 V, d
i/dt = 200 A/s,
T
jmax
= 150 C
kV/s
d
v/dt
6
Gate source voltage
20
V
V
GS
Power dissipation
T
A
= 25 C
W
P
tot
1.8
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
1999-10-28
Page 2
BSP318S
Final data
Thermal Characteristics
Parameter
Symbol
Unit
Values
typ.
max.
min.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
K/W
-
R
thJS
-
17
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
100
-
-
70
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Values
Symbol
Unit
max.
typ.
min.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
V
(BR)DSS
60
-
V
-
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 20 A
1.2
1.6
V
GS(th)
2
Zero gate voltage drain current
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 150 C
1
100
0.1
-
A
I
DSS
-
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
10
nA
100
-
R
DS(on)
-
0.12
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 2.6 A
0.15
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 2.6 A
R
DS(on)
-
0.07
0.09
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
1999-10-28
Page 3
BSP318S
Final data
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 2.6 A
g
fs
2.4
S
-
5.5
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
-
380
pF
300
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
-
90
120
C
oss
65
50
-
C
rss
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
t
d(on)
12
ns
20
-
Rise time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
t
r
-
15
25
20
30
t
d(off)
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
-
Fall time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 2.6 A,
R
G
= 16
t
f
-
15
25
1999-10-28
Page 4
BSP318S
Final data
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate charge at threshold
V
DD
= 40 V,
I
D
= 0.1 A, V = 1 V
-
Q
G(th)
nC
0.6
0.4
Gate charge at
V
GS
= 5 V
V
DD
= 40 V,
I
D
= 2.6 A,
V
GS
= 0 to 5 V
Qg(5)
7
10
-
20
-
Q
g
Gate charge total
V
DD
= 40 V,
I
D
= 2.6 A,
V
GS
= 0 to 10 V
14
Gate plateau voltage
V
DD
= 40 V ,
I
D
= 2.6 A
V
(plateau)
-
3.6
-
V
Parameter
Values
Symbol
Unit
max.
typ.
min.
Reverse Diode
A
-
-
2.6
I
S
Inverse diode continuous forward current
T
A
= 25 C
Inverse diode direct current,pulsed
T
A
= 25 C
-
I
SM
-
10.4
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 5.2 A
V
1.2
V
SD
0.95
-
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t = 100 A/s
-
75
ns
50
t
rr
-
0.1
0.15
Q
rr
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t = 100 A/s
C
1999-10-28
Page 5
BSP318S
Final data
Power Dissipation
P
tot
=
f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
1.9
BSP318S
P
tot
Drain current
I
D
=
f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
A
2.8
BSP318S
I
D
Safe operating area
I
D
=
f ( V
DS
)
parameter :
D = 0 , T
A
= 25 C
10
-1
10
0
10
1
10
2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSP318S
I
D
R
D
S
(on)
=
V
D
S
/
I
D
DC
10 ms
1 ms
t
p
= 140.0s
Transient thermal impedance
Z
thJA
=
f(t
p
)
parameter :
D = t
p
/
T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP318S
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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