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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC579
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT
v00.0506
General Description
Features
Functional Diagram
Electrical Specifications,
T
A
= +25 C, Vdd1, Vdd2 = 5.0V, 3 dBm Drive Level
Typical Applications
The HMC579 is suitable for:
Clock Generation Applications:
SONET OC-192 & SDH STM-64
Point-to-Point & VSAT Radios
Test Instrumentation
Military EW / Radar
Space
The HMC579 die is a x2 active broadband frequency
multiplier utilizing GaAs PHEMT technology. When
driven by a +3 dBm signal, the multiplier provides +13
dBm typical output power from 32 to 46 GHz. The Fo
isolation is >25 dBc at 38 GHz. The HMC579 is ideal
for use in LO multiplier chains for Pt to Pt & VSAT
Radios yielding reduced parts count vs. traditional
approaches. The low additive SSB Phase Noise of
-127 dBc/Hz at 100 kHz offset helps maintain good
system noise performance.
High Output Power: +13 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >25 dBc @ Fout= 38 GHz
100 KHz SSB Phase Noise: -127 dBc/Hz
Single Supply: +5V@ 70 mA
Die Size: 1.18 mm x 1.23 mm x 0.1 mm
Parameter
Min.
Typ. Max.
Units
Frequency Range, Input
16 - 23
GHz
Frequency Range, Output
32 - 46
GHz
Output Power
8
13
dBm
Fo Isolation (with respect to output level)
25
dBc
Input Return Loss
12
dB
Output Return Loss
8
dB
SSB Phase Noise (100 kHz Offset)
-127
dBc/Hz
Supply Current (Idd1, Idd2)
70
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Output Power vs.
Temperature @ 3 dBm Drive Level
Output Power vs.
Supply Voltage @ 3 dBm Drive Level
Output Power vs. Drive Level
Output Power vs. Input Power
Isolation @ 3 dBm Drive Level
0
2
4
6
8
10
12
14
16
18
20
30
32
34
36
38
40
42
44
46
48
+25C
+85C
-55C
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
HMC579
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT
v00.0506
-30
-20
-10
0
10
20
30
32
34
36
38
40
42
44
46
48
Fo
2Fo
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
-20
-15
-10
-5
0
5
10
15
20
-10
-8
-6
-4
-2
0
2
4
6
8
10
32GHz
39GHz
46GHz
OUTPUT POWER (dBm)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
30
32
34
36
38
40
42
44
46
48
4.5V
5.0V
5.5V
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
32
34
36
38
40
42
44
46
48
-6dBm
-4dBm
-2dBm
0dBm
2dBm
4dBm
6dBm
OUTPUT POWER (dBm)
OUTPUT FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
30
32
34
36
38
40
42
44
46
48
+25C
+85C
-55C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
15
16
17
18
19
20
21
22
23
24
+25C
+85C
-55C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
HMC579
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT
v00.0506
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Absolute Maximum Ratings
Outline Drawing
RF Input (Vdd = +5V)
+13 dBm
Supply Voltage (Vdd1, Vdd2)
+6.0 Vdc
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 7.3 mW/C above 85 C)
656 mW
Thermal Resistance
(Channel to die bottom)
137 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS .004"
3. TYPICAL BOND PAD IS .004" SQUARE.
4. TYPICAL BOND SPACING IS .006" CENTER TO CENTER.
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METALIZATION: GOLD
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
4.5
69
5.0
70
5.5
70
Note:
Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
[1]
Standard
Alternate [2]
GP-2
--
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] Reference this suffi x only when ordering alternate die
packaging.
HMC579
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT
v00.0506
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2 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Pad Number
Function
Description
Interface Schematic
1, 2
Vdd1, Vdd2
Supply voltage 5V 0.5V.
3
RFOUT
Pin is AC coupled and matched to
50 Ohms from 32 - 46 GHz.
4, 5
GND
Die bottom must be connected to RF ground.
6
RFIN
Pin is AC coupled and matched to
50 Ohms from 16 - 23 GHz.
Pad Description
HMC579
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 32 - 46 GHz OUTPUT
v00.0506
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