MICROWAVE CORPORATION
1 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC397
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10.0 GHz
v00.1002
General Description
Features
Functional Diagram
The HMC397 die is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC DC to 10
GHz amplifi er. This amplifi er can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +16dBm output power. The
HMC397 offers 15 dB of gain and an output IP3 of +32
dBm while requiring only 56 mA from a +5V supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and yields ex-
cellent gain stability over temperature while requiring
a minimal number of external bias components. The
HMC397 can easily be integrated into Multi-Chip-Mod-
ules (MCMs) due to its small (0.22mm
2
) size. All data
is with the chip in a 50 Ohm test fi xture connected via
0.025mm (1 mil) diameter wire bonds of minimal length
0.5mm (20 mils).
Gain: 15 dB
P1dB Output Power: +15 dBm
Stable Gain Over Temperature
50 Ohm I/O's
Small Size: 0.38 mm x 0.58 mm x 0.1 mm
Typical Applications
An excellent cascadable 50 Ohm
Gain Block or LO Driver for:
Microwave & VSAT Radios
Test Equipment
Military EW, ECM, C
3
I
Space Telecom
Electrical Specifi cations,
Vs= +5.0V, Rbias= 22 Ohm, T
A
= +25 C
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
15
14
12
dB
dB
dB
Gain Variation Over Temperature
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
0.004
0.015
0.02
dB/ C
dB/ C
dB/ C
Input Return Loss
DC - 3.0 GHz
3.0 - 10.0 GHz
15
14
dB
dB
Output Return Loss
DC - 3.0 GHz
3.0 - 10.0 GHz
15
13
dB
dB
Reverse Isolation
DC - 7.0 GHz
7.0 - 10.0 GHz
18
16
dB
dB
Output Power for 1 dB Compression (P1dB)
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
15
13
10
dBm
dBm
dBm
Output Third Order Intercept (IP3)
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
30
24
22
dBm
dBm
dBm
Noise Figure
DC - 7.0 GHz
7.0 - 10.0 GHz
4.5
6
dB
dB
Supply Current (Icq)
56
mA
Note: Data taken with broadband bias tee on device output.
MICROWAVE CORPORATION
1 - 49
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
-20
-15
-10
-5
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC397
Output Return Loss vs. Temperature
v00.1002
Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10.0 GHz
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC397
v00.1002
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10.0 GHz
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
12
14
16
18
20
22
24
26
28
30
32
34
0
1
2
3
4
5
6
7
8
9
10
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Power Compression @ 7 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Power Compression @ 1 GHz
0
5
10
15
20
25
30
35
40
0
20
40
60
80
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
Icq
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Icq (mA)
Vs(Vdc)
Gain, Power, OIP3 & Supply Current vs.
Supply Voltage @ 1 GHz
MICROWAVE CORPORATION
1 - 51
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC397
v00.1002
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10.0 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE 0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Collector Bias Voltage (Vcc)
+7.0 Vdc
RF Input Power (RFin)(Vcc = +5.0 Vdc)
+10 dBm
Junction Temperature
150 C
Continuous Pdiss (T= 85 C)
(derate 5.21 mW/C above 85 C)
0.339 W
Thermal Resistance
(junction to die bottom)
192 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
MICROWAVE CORPORATION
1 - 52
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC397
v00.1002
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10.0 GHz
Recommended Component Values
Component
Frequency (MHz)
50
1000
3000
7000
L1
270 nH
56 nH
8.2 nH
2.2 nH
C1, C2
0.01 F
100 pF
100 pF
100 pF
Application Circuit
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
2
RFOUT
RF output and DC Bias for the output stage.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias
> 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
MICROWAVE CORPORATION
1 - 53
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC397
v00.1002
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10.0 GHz
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
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