MICROWAVE CORPORATION
8 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC315
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
v01.0701
General Description
Features
Functional Diagram
The HMC315 is an ultra broadband GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifi er that operates from a single positive
supply. The surface mount SOT26 amplifi er can
be used as a broadband gain stage, or used
with external matching for optimized narrow band
applications. The Darlington confi guration results
in reduced sensitivity to normal process varia-
tions and provides a good 50-ohm input/output
port match. The amplifi er provides 15 dB of gain
and +17 dBm of saturated power while operating
from a single positive +7V supply.
Saturated Output Power: +17 dBm
Output IP3: +33 dBm
Gain: 15 dB
Single Supply: +5V to +7V
Ultra Small Package: SOT26
Electrical Specifi cations,
T
A
= +25 C, As a Function of Vcc
Typical Applications
The HMC315 is ideal for:
Fiber Optic OC-48 Systems
Microwave Test Instrumentation
Broadband Mobile Radio Platforms
Parameter
Vcc = +5V
Vcc = +7V
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
DC - 7
DC - 7
GHz
Gain
11
14
17
11
15
18
dB
Gain Variation over Temperature
0.015
0.025
0.015
0.025
dB/C
Input Return Loss
7
10
7
10
dB
Output Return Loss
3
7
3
7
dB
Reverse Isolation
18
21
18
21
dB
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
8
11
13
16
dBm
Saturated Output Power (Psat) @ 1.0 GHz
10
13
15
17.5
dBm
Output Third Order Intercept (OIP3) @ 1.0 GHz
23
26
30
33
dBm
Noise Figure
6.5
6.5
dB
Supply Current (Icc)
30
50
mA
MICROWAVE CORPORATION
8 - 81
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
0
1
2
3
4
5
6
7
8
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
0
1
2
3
4
5
6
7
8
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
GAIN (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
S11 Vcc=7V
S22 Vcc=7V
S11 Vcc=5V
S22 Vcc=5V
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
S12 Vcc=7V
S12 Vcc=5V
ISOLATION (dB)
FREQUENCY (GHz)
HMC315
Reverse Isolation vs. Vcc Bias
v01.0701
Gain & Return Loss @ Vcc= +7V
Gain vs. Temperature @ Vcc= +7V
Input & Output
Return Loss vs. Vcc Bias
Gain & Return Loss @ Vcc= +5V
Gain vs. Temperature @ Vcc= +5V
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
MICROWAVE CORPORATION
8 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
Psat (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
Psat (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
IP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
1
2
3
4
5
6
7
8
+25C
+60C
-40C
IP3 (dBm)
FREQUENCY (GHz)
HMC315
v01.0701
P1dB vs. Temperature @ Vcc= +7V
Output IP3 vs.
Temperature @ Vcc= +7V
Psat vs. Temperature @ Vcc= +7V
P1dB vs. Temperature @ Vcc= +5V
Psat vs. Temperature @ Vcc= +5V
Output IP3 vs.
Temperature @ Vcc= +5V
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
MICROWAVE CORPORATION
8 - 83
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
HMC315
v01.0701
Power Compression
@ 1.0 GHz, Vcc= +7V
Power Compression
@ 1.0 GHz, Vcc= +5V
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression
@ 3.0 GHz, Vcc= +7V
Power Compression
@ 3.0 GHz, Vcc= +5V
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
MICROWAVE CORPORATION
8 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC315
v01.0701
Outline Drawing
Absolute Maximum Ratings
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
Application Circuit
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Collector Bias Voltage (Vcc)
+7.5 Vdc
RF Input Power (RFin)(Vcc = +7.0 Vdc)
+20 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 60 C)
(derate 4.14 mW/C above 60 C)
0.373 W
Thermal Resistance
(junction to lead)
242 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +60 C
MICROWAVE CORPORATION
8 - 85
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC315
v01.0701
The circuit board used in the fi nal application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads should be con-
nected directly to the ground plane similar to that shown. A
suffi cient number of via holes should be used to connect
the top and bottom ground planes. The evaluation circuit
board shown is available from Hittite upon request.
Evaluation PCB
List of Material
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Item
Description
J1, J2
PC Mount SMA Connector
U1
HMC315 Amplifi er
PCB*
Evaluation PCB 1.5" x 1.5"
*Circuit Board Material: Roger 4350
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