SPECIFICATIONS
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum
Response
Input
Window
Minimum Effective Area
Minimum Photocathode
Illuminance
Limiting Resolution
Image Distortion
Image Intensifier to CCD
Coupling Method
Total Characteristics
Case Material
Lead Wire Cover
Weight
nm
nm
--
mm
--
mm
lx
TV line
%
--
--
--
--
g
160 to 900
430
Synthetic Silica
5.5
1.46
10.7 14.3
4 10
-
7
550
2
Tapered Fiber Optic
Plate Coupling
1.0
Poly Oxy Methylene
Teflon
Approx. 190
INTENSIFIED CCD IMAGE SENSOR MODULE
(CCD with proximity focused image intensifier)
V7363A
lnformation furnished by HA MAM ATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1998 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
Simple Operation and High Resolution
FEATURES
APPLICATIONS
Figure 1: Typical Spectral Response
TII B0071EA
TII F0159
High Resolution : 550 TV line
Tapered Fiber Optic Output Window Coupling to CCD
Simple Operation : Input Voltage +2V to +3V (16mA)
Wrap Around High Voltage Power Supply
Compact and Lightweight
Low Image Distortion
Low-Iight-level Imaging (with CCD driver)
MAXIMUM RATING
Parameter
Description/Value
Unit
Input Voltage
Maximum Input Current
Temperature
Storage
Operation
Shock
Vdc
mA
/min
2 to 3
16
-55 to +65
-20 to +40
12
100
10
1
0.1
0.01
100
200
WAVELENGTH (nm)
PHOTOCATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
300
400
500
600
700
800
900 1000
QUANTUM
EFFICIENCY
RADIANT
SENSITIVITY
Material
Thickness
Index of Refraction
at 589.6nm
Rear view
INTENSIFIED CCD IMAGE SENSOR MODULE V7363A
TII 1042E01
JUN. 1998
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Frgatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
TII A0039EA
Figure 2: Dimensional Outline (Unit: mm)
Other CCD types are available.
It requires a driver (sold separately) to operate this module. Consult with sales office nearby.
NOTES
Other input window types, other phosphor types, other photocathode types are available.
1 lm/m
2
/
lx = 1 ft-L/ft-c
2 stage MCP type is also available.
CCD
Type
2/3 inch
2/3 inch
Signal Output Method
EIA
CCIR
CCD Type No.
SONY ICX022
SONY ICX024
Effective Number of CCD Cells
768(H) 493(V)
756(H) 581(V)
Proximity Focused Image Intensifier
Parameter
Description/Value
Unit
Photocathode Material
Photocathode Luminous Sensitivity
Radiant Sensitivity at 430nm
Quantum Effciency at 300nm
Luminous Gain
MCP
Output Window Material
Phosphor Screen Material
Magnification
--
A/lm
mA/W
%
lm/m
2
/
lx
--
--
--
--
Multialkali
280
60
21
1.2 10
4
Single stage
Tapered Fiber Optic Plate
P-43
1.63 : 1
Min.
Typ.
Max.
150
--
--
7 10
3
--
--
--
--
--
PIN CONNECTION
53
43
0.5
20.32
2.54
5.5
PHOTOCATHODE
EFFECTIVE
PHOTOCATHODE
AREA
(10.7 14.3 MIN.)
D.C. INPUT LEADS
LENGTH 200 MIN.
RED: +2V to +3V
BLACK: GND
(
)
1
10
20
11
No. Symbol
Description
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
V
4
V
3
V
2
SUB
GND
V
1
VL
NC
NC
VDD
VOUT
VGG
VSS
GND
PD
PG
VL
H
2
H
1
GND
Vertical register transfer click
Vertical register transfer click
Vertical register transfer click
Substrate (OFD) bias
GND
Vertical register transfer click
Protective transistor bias
No Connection
No Connection
Output amplifier drain supply
Signal output
Output amplifier gate
Output amplifier source
GND
Pre-charge drain bias
Output reset clock
Protective transistor bias
Horizontal register transfer clock
Horizontal register transfer clock
GND
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