DS05-11410-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS
2
512K
32-BIT
SINGLE DATA RATE I/F FCRAM
TM
Consumer/Embedded Application Specific Memory for SiP
MB811L323229-12/18
s
DESCRIPTION
The Fujitsu MB811L323229 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*)
containing 33,554,432 memory cells accessible in a 32-bit format. The MB811L323229 features a fully synchro-
nous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which
enables high performance and simple user interface coexistence.
The MB811L323229 is utilized using Fujitsu advanced FCRAM core technology and designed for low power
consumption and low voltage operation than regular synchronous DRAM (SDRAM).
The MB811L323229 is dedicated for SiP (System in a package), and ideally suited for various embedded/
consumer applications including digital AVs and image processing where a large band width and low power
consumption memory is needed.
*: FCRAM is a trademark of Fujitsu Limited, Japan.
s
PRODUCT LINE
Parameter
MB811L323229-12
MB811L323229-18
Clock Frequency
81 MHz Max
54 MHz Max
CL - t
RCD
- t
RP
CL = 2
2 - 2 - 2 clk Min
2 - 2 - 2 clk Min
Burst Mode Cycle Time
CL = 2
12 ns Min
18 ns Min
Access Time from Clock
CL = 2
9 ns Max
9 ns Max
Operating Current
120mA Max
80mA Max
Power Down Mode Current (I
CC2PS
)
1 mA Max
1 mA Max
Self Refresh Current (I
CC6
)
2.5 mA Max
2.5 mA Max
MB811L323229-12/18
2
s
FEATURES
V
CCQ
: +3.3V Supply 0.3V tolerance or +2.5V Supply 0.2V tolerance
V
DD
: +2.5 V Supply 0.2 V tolerance
LVCMOS compatible I/O interface
2 K refresh cycles every 32 ms
Two bank operation (512 K word
32 bit
2 bank)
Burst read/write operation and burst read/single write operation capability
Programmable burst type and burst length
Burst type : Sequential Mode, Interleave Mode
Burst length : BL
=
1, 2, 4, 8, full column (256)
CAS latency
=
2
Auto-and Self-refresh
CKE power down mode
Byte control with DQM
0
to DQM
3
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